MB39C006A [FUJITSU]
1 ch DC/DC Converter IC Built-in Switching FET & POWERGOOD function, PFM/PWM Synchronous Rectification, and Down Conversion Support; 1通道DC / DC转换器IC内置开关FET和电源良好功能, PFM / PWM同步整流降压转换支持型号: | MB39C006A |
厂家: | FUJITSU |
描述: | 1 ch DC/DC Converter IC Built-in Switching FET & POWERGOOD function, PFM/PWM Synchronous Rectification, and Down Conversion Support |
文件: | 总48页 (文件大小:635K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FUJITSU MICROELECTRONICS
DATA SHEET
DS04-27245-2E
ASSP for Power Management Applications
1 ch DC/DC Converter IC Built-in Switching FET &
POWERGOOD function, PFM/PWM Synchronous
Rectification, and Down Conversion Support
MB39C006A
■ DESCRIPTION
The MB39C006A is a current mode type 1-channel DC/DC converter IC built-in switching FET, synchronous
rectification, and down conversion support. The device is integrated with a switching FET, oscillator, error amplifier,
PFM/PWM control circuit, reference voltage source, and POWERGOOD circuit.
External inductor and decoupling capacitor are needed only for the external component.
MB39C006A is small, achieve a highly effective DC/DC converter in the full load range, this is suitable as the
built-in power supply for handheld equipment such as mobile phone/PDA, DVDs, and HDDs.
■ FEATURES
• High efficiency
: 96% (Max)
• Low current consumption
• Output current (DC/DC)
• Input voltage range
: 30 μA (at PFM)
: 800 mA (Max)
: 2.5 V to 5.5 V
: 2.0/3.2 MHz (Typ)
• Operating frequency
• Built-in PWM operation fixed function
• No flyback diode needed
• Low dropout operation
: For 100% on duty
• Built-in high-precision reference voltage generator : 1.20 V 2%
• Consumption current in shutdown mode
: 1 μA or less
• Built-in switching FET
: P-ch MOS 0.3 Ω (Typ) N-ch MOS 0.2 Ω (Typ)
• High speed for input and load transient response in the current mode
• Over temperature protection
• Packaged in a compact package
: SON10
■ APPLICATIONS
• Flash ROMs
• MP3 players
• Electronic dictionary devices
• Surveillance cameras
• Portable GPS navigators
• Mobile phones
etc.
Copyright©2008-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2009.8
MB39C006A
■ PIN ASSIGNMENT
(Top View)
VDD
10
OUT
9
MODE
VREFIN
7
FSEL
6
8
1
2
3
4
5
LX
GND
CTL
VREF
POWERGOOD
(LCC-10P-M04)
■ PIN DESCRIPTIONS
Pin No
Pin name
LX
I/O
O
⎯
I
Description
1
2
3
4
Inductor connection output pin. High impedance during shut down.
Ground pin.
GND
CTL
Control input pin. (L : Shut down / H : Normal operation)
Reference voltage output pin.
VREF
O
POWERGOOD circuit output pin. Internally connected to an N-ch MOS open
drain circuit.
5
POWERGOOD
O
Frequency switch pin.
(L (open) : 2.0 MHz, H : 3.2 MHz)
6
7
8
FSEL
VREFIN
MODE
I
I
I
Error amplifier (Error Amp) non-inverted input pin.
Operation mode switch pin.
(L : PFM/PWM mode, OPEN : PWM mode)
9
OUT
VDD
I
Output voltage feedback pin.
Power supply pin.
10
⎯
2
DS04-27245-2E
MB39C006A
■ I/O PIN EQUIVALENT CIRCUIT DIAGRAM
VDD
VDD
∗
∗
LX
VREF
GND
VDD
GND
∗
∗
∗
OUT
VREFIN
∗
GND
VDD
VDD
∗
∗
CTL
FSEL
∗
GND
GND
VDD
POWER
GOOD
*
∗
MODE
GND
*
GND
* : ESD Protection device
DS04-27245-2E
3
MB39C006A
■ BLOCK DIAGRAM
VIN
VDD
10
CTL
3
ON/OFF
OUT
9
×3
VDD
Error Amp
−
+
5
POWERGOOD
POWER-
GOOD
I
OUT
Comparator
VREF
4
1.20 V
VREF
PFM/PWM
Logic
LX
VOUT
1
VREFIN
Control
7
8
DAC
Lo : PFM/PWM
OPEN : PWM
Mode
Control
MODE
6
2
GND
FSEL
4
DS04-27245-2E
MB39C006A
• Current mode
• Original voltage mode type:
Stabilize the output voltage by comparing two items below and on-duty control.
- Voltage (VC) obtained through negative feedback of the output voltage by Error Amp
- Reference triangular wave (VTRI)
• Current mode type:
Instead of the triangular wave (VTRI), the voltage (VIDET) obtained through I-V conversion of the sum of currents
that flow in the oscillator (rectangular wave generation circuit) and SW FET is used.
Stabilize the output voltage by comparing two items below and on-duty control.
- Voltage (VC) obtained through negative feedback of the output voltage by Error Amp
- Voltage (VIDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular
wave generation circuit) and SW FET
Voltage mode type model
Current mode type model
VIN
VIN
Oscillator
S
Vc
Vc
Q
R
VTRI
VIDET
SR-FF
Vc
VTRI
VIDET
Vc
ton
toff
toff
ton
Note : The above models illustrate the general operation and an actual operation will be preferred in the IC.
DS04-27245-2E
5
MB39C006A
■ FUNCTION OF EACH BLOCK
• PFM/PWM Logic control circuit
In normal operation, frequency (2.0 MHz/3.2 MHz) which is set by the built-in oscillator (square wave oscillation
circuit) controls the built-in P-ch MOS FET and N-ch MOS FET for the synchronous rectification operation. In
the light load mode, the intermittent (PFM) operation is executed.
This circuit protects against pass-through current caused by synchronous rectification and against reverse
current caused in a non-successive operation mode.
• IOUT comparator circuit
This circuit detects the current (ILX) which flows to the external inductor from the built-in P-ch MOS FET.
By comparing VIDET obtained through I-V conversion of peak current IPK of ILX with the Error Amp output, the built-
in P-ch MOS FET is turned off via the PFM/PWM Logic Control circuit.
• Error Amp phase compensation circuit
This circuit compares the output voltage to reference voltages such as VREF. The MB39C006A has a built-in
phase compensation circuit that is designed to optimize the operation of the MB39C006A. This needs neither
to be considered nor addition of a phase compensation circuit and an external phase compensation device.
• VREF circuit
A high accuracy reference voltage is generated with BGR (bandgap reference) circuit. The output voltage is
1.20 V (Typ).
• POWERGOOD circuit
The POWERGOOD circuit monitors the voltage at the OUT pin. The POWERGOOD pin is open drain output.
Use the pin with pull-up using the external resistor in the normal operation.
When the CTL is at the H level, the POWERGOOD pin becomes the H level. However, if the output voltage drops
because of over current and etc, the POWERGOOD pin becomes the L level.
Timing chart example : (POWERGOOD pin pulled up to VIN)
VIN
VUVLO
CTL
VOUT×97
%
VOUT
POWERGOOD
(pull up to VIN)
tDLYPG
tDLYPG
tDLYPG or less
VUVLO : UVLO threshold voltage
tDLYPG : POWERGOOD delay time
6
DS04-27245-2E
MB39C006A
• Protection circuit
The MB39C006A has a built-in over-temperature protection circuit.
The over-temperature protection circuit turns off both N-ch and P-ch switching FETs when the junction
temperature reaches +135 °C. When the junction temperature drops to + 110 °C, the switching FET returns to
the normal operation.
Since the PFM/PWM control circuit of the MB39C006A is in the control method in current mode, the current
peak value is also monitored and controlled as required.
• FUNCTION TABLE
Input
Output
VREF
MODE
Switching
frequency
OUTPUT pin
voltage
CTL
L
MODE
FSEL
POWERGOOD
Function stop
Operation
Shutdown
mode
Output
stop
⎯
*
L
*
Output stop
PFM/PWM
mode
VOUT voltage
output
2.0 MHz
2.0 MHz
3.2 MHz
3.2 MHz
H
L
1.2 V
1.2 V
1.2 V
1.2 V
PWM fixed
mode
VOUT voltage
output
H
OPEN
L
L
Operation
PFM/PWM
mode
VOUT voltage
output
H
H
H
Operation
PWM fixed
mode
VOUT voltage
output
H
OPEN
Operation
* : Don't care
DS04-27245-2E
7
MB39C006A
■ ABSOLUTE MAXIMUM RATINGS
Rating
Parameter
Symbol
Condition
Unit
Min
− 0.3
− 0.3
− 0.3
− 0.3
− 0.3
− 0.3
⎯
Max
+ 6.0
Power supply voltage
VDD
VDD pin
OUT pin
V
VDD + 0.3
VDD + 0.3
VDD + 0.3
+ 6.0
Signal input voltage
VISIG
CTL, MODE, FSEL pins
VREFIN pin
V
POWERGOOD pull-up voltage
LX voltage
VIPG
POWERGOOD pin
LX pin
V
V
A
VLX
IPK
VDD + 0.3
1.8
LX peak current
The upper limit value of ILX
⎯
2632*1, *2, *3
980*1, *2, *4
1053*1, *2, *3
392*1, *2, *4
+ 85
Ta ≤ + 25 °C
Ta = + 85 °C
mW
mW
⎯
Power dissipation
PD
⎯
⎯
Operating ambient temperature
Storage temperature
Ta
⎯
⎯
− 40
− 55
°C
°C
TSTG
+ 125
*1 : See “■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS • Power dissipation vs. Operating
ambient temperature” for the package power dissipation of Ta from + 25 °C to + 85 °C.
*2 : When mounted on a four- layer epoxy board of 11.7 cm × 8.4 cm
*3 : IC is mounted on a four-layer epoxy board, which has thermal via, and the IC's thermal pad is connected to
the epoxy board (Thermal via is 4 holes).
*4 : IC is mounted on a four-layer epoxy board, which has no thermal via, and the IC's thermal pad is connected
to the epoxy board.
Notes • The use of negative voltages below − 0.3 V to the GND pin may create parasitic transistors on LSI lines,
which can cause abnormal operation.
• This device can be damaged if the LX pin is short-circuited to VDD pin or GND pin.
• Take measures not to keep the FSEL pin falling below the GND pin potential of the MB39C006A as much as
possible.
In addition to erroneous operation, the IC may latch up and destroy itself if 110 mA or more current flows
from this pin.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
8
DS04-27245-2E
MB39C006A
■ RECOMMENDED OPERATING CONDITIONS
Value
Unit
Parameter
Symbol
Condition
Min
2.5
0.15
0
Typ
3.7
⎯
Max
5.5
1.20
5.0
800
1
Power supply voltage
VREFIN voltage
CTL voltage
VDD
VREFIN
VCTL
ILX
⎯
V
V
⎯
⎯
⎯
⎯
V
LX current
⎯
⎯
mA
mA
POWERGOOD current
IPG
⎯
⎯
⎯
2.5 V ≤ VDD ≤ 3.0 V
3.0 V ≤ VDD ≤ 5.5 V
fOSC1 = 2.0 MHz (FSEL = L)
fOSC2 = 3.2 MHz (FSEL = H)
⎯
⎯
0.5
1
VREF output current
Inductor value
IROUT
mA
⎯
⎯
⎯
2.2
1.5
⎯
L
μH
⎯
⎯
Note : Theoutputcurrentfromthisdevicehasasituationtodecreaseifthepowersupplyvoltage(VIN)andtheDC/DC
converter output voltage (VOUT) differ only by a small amount. This is a result of slope compensation and will
not damage this device.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS04-27245-2E
9
MB39C006A
■ ELECTRICAL CHARACTERISTICS
(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)
Value
Pin
No.
Parameter
Symbol
Condition
Unit
Min
−100
−100
−100
Typ
0
Max
IREFINM
IREFINL
IREFINH
VREFIN = 0.833 V
+ 100
+ 100
+ 100
nA
nA
nA
Input current
7
9
VREFIN = 0.15 V
VREFIN = 1.20 V
0
0
VREFIN = 0.833 V,
OUT = −100 mA
2.5 V ≤ VDD ≤ 5.5 V *1
Output voltage
Input stability
Load stability
VOUT
LINE
LOAD
2.45
⎯
2.50
10
2.55
⎯
V
mV
mV
− 100 mA ≥ OUT ≥
− 800 mA
⎯
10
⎯
Out pin input
impedance
ROUT
IPK
OUT = 2.0 V
0.6
0.9
⎯
1.0
1.2
30
1.5
1.7
⎯
MΩ
A
LX peak current
Output shorted to GND
FSEL = 0 V, L = 2.2 μH
DC/DC
PFM/PWM switch
IMSW
mA
converter current
block
1
fOSC1
fOSC2
FSEL = 0 V
1.6
2.0
2.4
MHz
MHz
Oscillation
frequency
FSEL = 3.7 V
2.56
3.20
3.84
C1 = 4.7 μF, OUT = 0 A,
VOUT = 90%
Rise delay time
tPG
3, 9
⎯
⎯
⎯
45
80
⎯
μs
mV
Ω
SW NMOS FET
OFF voltage
VNOFF
RONP
RONN
⎯
−20*
0.30
0.20
SW PMOS FET
ON resistance
LX = −100 mA
0.47
1
SW NMOS FET
ON resistance
LX = −100 mA
0 ≤ LX ≤ VDD*2
VDD = 5.5 V, 0 ≤ LX ≤ VDD*2 −2.0
⎯
0.36
Ω
ILEAKM
ILEAKH
TOTPH
−1.0
⎯
⎯
+ 8.0
μA
LX leak current
+ 16.0 μA
Over temperature
protection
(Junction Temp.)
+ 120* + 135* + 155*
+ 95* + 110* + 130*
°C
°C
⎯
⎯
TOTPL
Protection
circuit block
VTHH
VTHL
2.07
1.92
2.20
2.05
2.33
2.18
V
V
UVLO threshold
voltage
⎯
⎯
10
UVLO hysteresis
width
VHYS
0.08
0.15
0.25
V
* : This value isn't be specified. This should be used as a reference to support designing the circuits.
(Continued)
10
DS04-27245-2E
MB39C006A
(Continued)
(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)
Value
Typ
Pin
No.
Parameter
POWERGOOD
Symbol
Condition
Unit
Min
Max
VREFIN
× 3
VREFIN
× 3
VREFIN
× 3
VTHPG
*3
V
threshold voltage
× 0.93 × 0.97 × 0.99
tDLYPG1
tDLYPG2
FSEL = 0 V
FSEL = 3.7 V
⎯
⎯
250
⎯
⎯
μs
μs
POWERGOOD
delay time
POWER-
GOOD
block
5
3
170
POWERGOOD
output voltage
VOL
IOH
POWERGOOD = 250 μA
POWERGOOD = 5.5 V
⎯
⎯
⎯
⎯
0.1
V
POWERGOOD
output current
1.0
μA
VTHHCT
VTHLCT
⎯
⎯
0.55
0.40
0.95
0.80
1.45
1.30
V
V
CTL threshold
voltage
CTL pin
input current
IICTL
CTL = 3.7 V
⎯
⎯
1.0
μA
VTHMMD
VTHLMD
OPEN setting
⎯
⎯
1.5
⎯
0.4
V
V
Control
block
MODE threshold
voltage
⎯
⎯
8
6
4
MODE pin input
current
ILMD
MODE = 0 V
− 0.8
− 0.4
⎯
μA
VTHHFS
VTHLFS
⎯
⎯
2.96
⎯
⎯
⎯
0.74
V
V
FSEL threshold
voltage
⎯
VREF = −2.7 μA,
OUT = −100 mA
VREF voltage
VREF
1.176
1.200
1.224
20
V
Reference
voltage
block
VREF load
stability
LOADREF
VREF = −1.0 mA
⎯
⎯
mV
CTL = 0 V,
Shut down
power supply
current
IVDD1
⎯
⎯
⎯
⎯
1.0
1.0
μA
μA
All circuits in OFF state
IVDD1H
CTL = 0 V, VDD = 5.5 V
Power supply
current at
DC/DC operation
(PFM mode)
CTL = 3.7 V,
MODE = 0 V,
OUT = 0 A
IVDD2
⎯
30
48
μA
General
10
Power supply
current at
DC/DC operation
(PWM fixed
mode)
CTL = 3.7 V,
MODE = OPEN,
OUT = 0 A,
IVDD2
⎯
⎯
4.8
8.0
mA
FSEL = 0 V
Power-on
invalid current
CTL = 3.7 V,
IVDD
800
1500
μA
VOUT = 90%*4
*1 : The minimum value of VDD is the 2.5 V or VOUT setting value + 0.6 V, whichever is higher.
*2 : The + leak at the LX pin includes the current of the internal circuit.
*3 : Detected with respect to the output voltage setting value of VREFIN
*4 : Current consumption based on 100% ON-duty (High side FET in full ON state). The SW FET gate drive current
is not included because the device is in full ON state (no switching operation). Also the load current is not
included.
DS04-27245-2E
11
MB39C006A
■ TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS
VDD
MB39C006A
VDD
SW
SW
VIN
CTL
3
10
VDD
C2
4.7 µF
R5
1 MΩ
L1
1.5 µH/2.2 µH
8
4
MODE
1
9
VOUT
GND
LX
OUT
VREF
FSEL
IOUT
C1
4.7 µF
R3-1
R1
7.5 kΩ
SW
1 MΩ
POWER-
GOOD
5
2
6
7
R3-2
120 kΩ
GND
VREFIN
R4
300 kΩ
C6
0.1 µF
VOUT = VREFIN × 2.97
Component
Specification
Vendor
Part Number
Remark
R1
1 MΩ
KOA
RK73G1JTTD D 1 MΩ
R3-1
R3-2
7.5 kΩ
120 kΩ
SSM
SSM
RR0816-752-D
RR0816-124-D
At VOUT = 2.5 V setting
R4
R5
C1
C2
300 kΩ
1 MΩ
SSM
KOA
TDK
TDK
RR0816-304-D
RK73G1JTTD D 1 MΩ
C2012JB1A475K
C2012JB1A475K
4.7 μF
4.7 μF
For adjusting slow start
time
C6
L1
0.1 μF
TDK
C1608JB1H104K
2.2 μH
1.5 μH
TDK
TDK
VLF4012AT-2R2M
VLF4012AT-1R5M
2.0 MHz operation
3.2 MHz operation
Note : These components are recommended based on the operating tests authorized.
TDK : TDK Corporation
SSM : SUSUMU Co., Ltd
KOA : KOA Corporation
12
DS04-27245-2E
MB39C006A
■ APPLICATION NOTES
[1] Selection of components
• Selection of an external inductor
Basically it dose not need to design inductor. The MB39C006A is designed to operate efficiently with a 2.2 μH
(2.0 MHz operation) or 1.5 μH (3.2 MHz operation) external inductor.
The inductor should be rated for a saturation current higher than the LX peak current value during normal
operating conditions, and should have a minimal DC resistance. (100 mΩ or less is recommended.)
The LX peak current value IPK is obtained by the following formula.
VIN − VOUT
D
1
2
(VIN − VOUT) × VOUT
2 × L × fosc × VIN
IPK = IOUT +
×
×
= IOUT +
L
fosc
L
: External inductor value
IOUT : Load current
VIN
: Power supply voltage
VOUT : Output setting voltage
D
: ON- duty to be switched( = VOUT/VIN)
fosc : Switching frequency (2.0 MHz or 3.2 MHz)
ex) At VIN = 3.7 V, VOUT = 2.5 V, IOUT = 0.8 A, L = 2.2 μH, fosc = 2.0 MHz
The maximum peak current value IPK;
(VIN − VOUT) × VOUT
(3.7 V − 2.5 V) × 2.5 V
2 × 2.2 μH × 2.0 MHz × 3.7 V
IPK = IOUT +
= 0.8 A +
=: 0.89 A
2 × L × fosc × VIN
• I/O capacitor selection
• Select a low equivalent series resistance (ESR) for the VDD input capacitor to suppress dissipation from ripple
currents.
• Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor
current causes ripple currents on the output capacitor which, in turn, causes ripple voltages an output equal
to the amount of variation multiplied by the ESR value. The output capacitor value has a significant impact on
the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELEC-
TRONICS generally recommends a 4.7 μF capacitor, or a larger capacitor value can be used if ripple voltages
are not suitable. If the VIN/VOUT voltage difference is within 0.6 V, the use of a 10 μF output capacitor value is
recommended.
• Types of capacitors
Ceramic capacitors are effective for reducing the ESR and afford smaller DC/DC converter circuit. However,
power supply functions as a heat generator, therefore avoid to use capacitor with the F-temperature rating
( − 80% to + 20%). FUJITSU MICROELECTRONICS recommends capacitors with the B-temperature rating
(
10% to 20%).
Normal electrolytic capacitors are not recommended due to their high ESR.
Tantalum capacitor will reduce ESR, however, it is dangerous to use because it turns into short mode when
damaged. If you insist on using a tantalum capacitor, FUJITSU MICROELECTRONICS recommends the type
with an internal fuse.
DS04-27245-2E
13
MB39C006A
[2] Output voltage setting
The output voltage VOUT of the MB39C006A is defined by the voltage input to VREFIN. Supply the voltage for
inputting to VREFIN from an external power supply, or set the VREF output by dividing it with resistors.
The output voltage when the VREFIN voltage is set by dividing the VREF voltage with resistors is shown in the
following formula.
R4
VOUT = 2.97 × VREFIN,
(VREF = 1.20 V)
VREFIN =
× VREF
R3 + R4
MB39C006A
VREF
VREF
4
7
R3
R4
VREFIN
VREFIN
Note : See “■ APPLICATIN CIRCUIT EXAMPLES” for an example of this circuit.
Although the output voltage is defined according to the dividing ratio of resistance, select the resistance value
so that the current flowing through the resistance does not exceed the VREF current rating (1 mA) .
[3] About conversion efficiency
The conversion efficiency can be improved by reducing the loss of the DC/DC converter circuit.
The total loss (PLOSS) of the DC/DC converter is roughly divided as follows :
PLOSS = PCONT + PSW + PC
PCONT
: Control system circuit loss (The power to operate the MB39C006A, including the gate driving
power for internal SW FETs)
PSW
PC
: Switching loss (The loss caused during the switch of the IC's internal SW FETs)
: Continuity loss (The loss caused when currents flow through the IC's internal SW FETs and external
circuits )
The IC's control circuit loss (PCONT) is extremely small, several tens of mW* with no load.
As the IC contains FETs which can switch faster with less power, the continuity loss (PC) is more predominant
as the loss during heavy-load operation than the control circuit loss (PCONT) and switching loss (PSW) .
* : The loss in the successive operation mode. This IC suppresses the loss in order to execute the PFM operation
in the low load mode (less than 100 μA in no load mode). Mode is changed by the current peak value IPK which
flows into switching FET. The threshold value is about 30 mA.
14
DS04-27245-2E
MB39C006A
Furthermore, the continuity loss (PC) is divided roughly into the loss by internal SW FET ON-resistance and by
external inductor series resistance.
2
PC = IOUT × (RDC + D × RONP + (1 − D) × RONN)
D
: Switching ON-duty cycle ( = VOUT / VIN)
: Internal P-ch SW FET ON resistance
: Internal N-ch SW FET ON resistance
: External inductor series resistance
: Load current
RONP
RONN
RDC
IOUT
The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency by
selecting components.
[4] Power dissipation and heat considerations
The IC is so efficient that no consideration is required in most of the cases. However, if the IC is used at a low
power supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration for
higher efficiency.
The internal loss (P) is roughly obtained from the following formula :
2
P = IOUT × (D × RONP + (1 − D) × RONN)
D
: Switching ON-duty cycle ( = VOUT / VIN)
: Internal P-ch SW FET ON resistance
: Internal N-ch SW FET ON resistance
: Output current
RONP
RONN
IOUT
The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching loss
and the control circuit loss as well but they are so small compared to the continuity loss they can be ignored.
In the MB39C006A with RONP greater than RONN, the larger the on-duty cycle, the greater the loss.
When assuming VIN = 3.7 V, Ta = + 70 °C for example, RONP = 0.42 Ω and RONN = 0.36 Ω according to the graph
“MOS FET ON resistance vs. Operating ambient temperature”. The IC's internal loss P is 144 mW at VOUT = 2.5
V and IOUT = 0.6 A. According to the graph “Power dissipation vs. Operating ambient temperature”, the power
dissipation at an operating ambient temperature Ta of + 70 °C is 539 mW and the internal loss is smaller than
the power dissipation.
DS04-27245-2E
15
MB39C006A
[5] Transient response
Normally, IOUT is suddenly changed while VIN and VOUT are maintained constant, responsiveness including the
response time and overshoot/undershoot voltage is checked. As the MB39C006A has built-in Error Amp with
an optimized design, it shows good transient response characteristics. However, if ringing upon sudden change
of the load is high due to the operating conditions, add capacitor C6 (e.g. 0.1 μF). (Since this capacitor C6
changes the start time, check the start waveform as well.) This action is not required for DAC input.
MB39C006A
VREF
4
7
VREF
R3
VREFIN
VREFIN
C6
R4
[6] Board layout, design example
The board layout needs to be designed to ensure the stable operation of the MB39C006A.
Follow the procedure below for designing the layout.
• Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a through hole
(TH) near the pins of this capacitor if the board has planes for power and GND.
• Large AC currents flow between the MB39C006A and the input capacitor (Cin), output capacitor (CO), and
external inductor (L). Group these components as close as possible to the MB39C006A to reduce the overall
loop area occupied by this group. Also try to mount these components on the same surface and arrange
wiring without through hole wiring. Use thick, short, and straight routes to wire the net (The layout by planes
is recommended.).
• The feedback wiring to the OUT should be wired from the voltage output pin closest to the output capacitor
(CO). The OUT pin is extremely sensitive and should thus be kept wired away from the LX pin of the MB39C006A
as far as possible.
• If applying voltage to the VREFIN pin through dividing resistors, arrange the resistors so that the wiring can
be kept as short as possible. Also arrange them so that the GND pin of the VREFIN resistor is close to the
IC's GND pin. Further, provide a GND exclusively for the control line so that the resistor can be connected via
a path that does not carry current. If installing a bypass capacitor for the VREFIN, put it close to the VREFIN pin.
• Try to make a GND plane on the surface to which the MB39C006A will be mounted. For efficient heat dissipation
when using the SON 10 package, FUJITSU MICROELECTRONICS recommends providing a thermal via in
the footprint of the thermal pad.
Layout Example of IC SW components
1 Pin
VIN
GND
Co
Vo
Cin
L
Feedback line
16
DS04-27245-2E
MB39C006A
• Notes for Circuit Design
• The switching operation of the MB39C006A works by monitoring and controlling the peak current which,
incidentally, serves as form of short-circuit protection. However, do not leave the output short-circuited for long
periods of time. If the output is short-circuited where VIN < 2.9 V, the current limit value (peak current to the
inductor) tends to rise. Leaving in the short-circuit state, the temperature of the MB39C006A will continue
rising and activate the thermal protection.
Once the thermal protection stops the output, the temperature of the IC will go down and operation will resume,
after which the output will repeat the starting and stopping.
Although this effect will not destroy the IC, the thermal exposure to the IC over prolonged hours may affect the
peripherals surrounding it.
DS04-27245-2E
17
MB39C006A
■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS
(Shown below is an example of characteristics for connection according to“■ TEST CIRCUIT FOR MEASURING
TYPICAL OPERATING CHARACTERISTICS”.)
Conversion efficiency vs. Load current
(2.0 MHz:PFM/PWM mode)
Conversion efficiency vs. Load current
(2.0 MHz:PFM/PWM mode)
100
90
80
70
60
50
100
90
80
70
60
50
V
IN = 3.7 V
V
IN = 3.7 V
V
IN = 3.0 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 5.0 V
V
IN = 4.2 V
Ta = +25°C
OUT = 1.2 V
FSEL = L
Ta = +25°C
OUT = 2.5 V
FSEL = L
V
V
V
IN = 5.0V
MODE = L
MODE = L
1
10
100
1000
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
Conversion efficiency vs. Load current
(2.0 MHz:PFM/PWM mode)
Conversion efficiency vs. Load current
(2.0 MHz:PFM/PWM mode)
100
100
90
80
70
60
50
V
IN = 3.7 V
90
80
70
60
50
40
30
20
10
0
V
IN = 3.7 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 4.2 V
V
IN = 5.0 V
Ta = +25°C
Ta = +25°C
OUT = 1.8 V
FSEL = L
V
OUT = 3.3 V
V
FSEL = L
MODE = L
V
IN = 5.0 V
MODE = L
1
10
100
1000
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
(Continued)
18
DS04-27245-2E
MB39C006A
Conversion efficiency vs. Load current
(2.0 MHz:PWM fixed mode)
Conversion efficiency vs. Load current
(2.0 MHz:PWM fixed mode)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
V
IN = 3.7 V
V
IN = 3.7 V
V
IN = 3.0 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 4.2 V
V
IN = 5.0 V
V
IN = 5.0V
Ta = +25°C
Ta = +25°C
OUT = 1.2 V
V
OUT = 2.5 V
V
FSEL = L
FSEL = L
MODE = OPEN
MODE = OPEN
1
10
100
1000
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
Conversion efficiency vs. Load current
(2.0 MHz:PWM fixed mode)
Conversion efficiency vs. Load current
(2.0 MHz:PWM fixed mode)
100
100
90
80
70
60
50
40
30
20
10
0
V
IN = 3.7 V
90
80
70
60
50
40
30
20
10
0
V
IN = 3.7 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 4.2 V
V
IN = 5.0 V
V
IN = 5.0 V
Ta = +25°C
OUT = 3.3 V
Ta = +25°C
OUT = 1.8 V
V
V
FSEL = L
FSEL = L
MODE = OPEN
MODE = OPEN
1
10
100
1000
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
(Continued)
DS04-27245-2E
19
MB39C006A
Conversion efficiency vs. Load current
(3.2 MHz: PFM/PWM mode)
Conversion efficiency vs. Load current
(3.2 MHz: PFM/PWM mode)
100
90
80
70
60
50
100
90
80
70
60
50
V
IN = 3.7 V
V
IN = 3.7 V
V
IN = 3.0 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 5.0 V
V
IN = 4.2 V
Ta = +25°C
OUT = 2.5 V
Ta = +25°C
VOUT = 1.2 V
V
IN = 5.0 V
V
FSEL = H
FSEL = H
MODE = L
MODE = L
1
10
100
1000
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
Conversion efficiency vs. Load current
(3.2 MHz:PFM/PWM mode)
Conversion efficiency vs. Load current
(3.2 MHz:PFM/PWM mode)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
V
IN = 3.7 V
V
IN = 3.7 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 4.2 V
V
IN = 5.0 V
Ta = +25°C
Ta = +25°C
OUT = 1.8 V
V
OUT = 3.3 V
V
V
IN = 5.0 V
10
FSEL = H
FSEL = H
MODE = L
MODE = L
1
10
100
1000
1
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
(Continued)
20
DS04-27245-2E
MB39C006A
Conversion efficiency vs. Load current
(3.2 MHz:PWM fixed mode)
Conversion efficiency vs. Load current
(3.2 MHz:PWM fixed mode)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
V
IN = 3.7 V
V
IN = 3.7 V
V
IN = 3.0 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 4.2 V
V
IN = 5.0 V
V
IN = 5.0 V
Ta = +25°C
OUT = 2.5 V
Ta = +25°C
OUT = 1.2 V
V
V
FSEL = H
FSEL = H
MODE = OPEN
MODE = OPEN
1
10
100
1000
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
Conversion efficiency vs. Load current
(3.2 MHz:PWM fixed mode)
Conversion efficiency vs. Load current
(3.2 MHz:PWM fixed mode)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
V
IN = 3.7 V
V
IN = 3.7 V
V
IN = 4.2 V
V
IN = 3.0 V
V
IN = 4.2 V
V
IN = 5.0 V
V
IN = 5.0 V
Ta = +25°C
OUT = 3.3 V
Ta = +25°C
OUT = 1.8 V
V
V
FSEL = H
FSEL = H
MODE = OPEN
MODE = OPEN
1
10
100
1000
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA)
(Continued)
DS04-27245-2E
21
MB39C006A
Output voltage vs. Input voltage
(2.0 MHz: PFM/PWM mode)
Output voltage vs. Input voltage
(3.2 MHz: PFM/PWM mode)
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
OUT = 0 A
OUT = 0 A
Ta = +25°C
Ta = +25°C
V
OUT = 2.5 V
V
OUT = 2.5 V
OUT = -100 mA
OUT = -100 mA
FSEL = H
FSEL = L
MODE = L
MODE = L
2.0
3.0
4.0
5.0
6.0
2.0
3.0
4.0
5.0
6.0
Input voltage VIN (V)
Input voltage VIN (V)
Output voltage vs. Input voltage
(3.2 MHz: PWM fixed mode)
Output voltage vs. Input voltage
(2.0 MHz: PWM fixed mode)
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
OUT = 0 A
OUT = 0 A
Ta = +25°C
Ta = +25°C
V
OUT = 2.5 V
V
OUT = 2.5 V
FSEL = H
FSEL = L
OUT = -100 mA
MODE = OPEN
OUT = -100 mA
MODE = OPEN
2.0
3.0
4.0
5.0
6.0
2.0
3.0
4.0
5.0
6.0
Input voltage VIN (V)
Input voltage VIN (V)
(Continued)
22
DS04-27245-2E
MB39C006A
Output voltage vs. Load current
(2.0 MHz)
Output voltage vs. Load current
(3.2 MHz)
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
PFM/PWM mode
PFM/PWM mode
PWM fixed mode
Ta = +25°C
PWM fixed mode
Ta = +25°C
V
V
IN = 3.7 V
V
V
IN = 3.7 V
OUT = 2.5 V
OUT = 2.5 V
FSEL = H
FSEL = L
0
200
400
600
800
0
200
400
600
800
Load current IOUT (mA)
Load current IOUT (mA)
Reference voltage vs.
Operating ambient temperature
(2.0 MHz: PFM/PWM mode)
Reference voltage vs. Input voltage
(2.0 MHz: PFM/PWM mode)
1.30
1.28
1.26
1.24
1.22
1.20
1.18
1.16
1.14
1.12
1.10
1.30
1.28
1.26
1.24
1.22
1.20
1.18
1.16
1.14
1.12
1.10
V
V
IN = 3.7 V
OUT = 2.5 V
OUT = 0 A
FSEL = L
MODE = L
OUT = 0 A
Ta = +25°C
OUT = -100 mA
V
OUT = 2.5 V
FSEL = L
MODE = L
-50
0
+50
+100
2.0
3.0
4.0
5.0
6.0
Operating ambient temperature Ta ( °C)
Input voltage VIN (V)
(Continued)
DS04-27245-2E
23
MB39C006A
Input current vs. Input voltage
(PWM fixed mode)
Input current vs. Input voltage
(PFM/PWM mode)
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
Ta = +25°C
OUT = 2.5 V
Ta = +25°C
V
V
OUT = 2.5 V
MODE = L
MODE = OPEN
0
2.0
3.0
4.0
5.0
6.0
2.0
3.0
4.0
5.0
6.0
Input voltage VIN (V)
Input voltage VIN (V)
Input current vs.
Operating ambient temperature
(PWM fixed mode)
Input current vs.
Operating ambient temperature
(PFM/PWM mode)
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
V
V
IN = 3.7 V
V
V
IN = 3.7 V
OUT = 2.5 V
OUT = 2.5 V
MODE = L
MODE = OPEN
0
-50
0
+50
+100
-50
0
+50
+100
Operating ambient temperature Ta ( °C)
Operating ambient temperature Ta ( °C)
(Continued)
24
DS04-27245-2E
MB39C006A
Oscillation frequency vs. Input voltage
(3.2 MHz)
Oscillation frequency vs. Input voltage
(2.0 MHz)
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
3.6
3.4
3.2
3.0
2.8
2.6
2.4
Ta = +25°C
Ta = +25°C
OUT = 1.8 V
V
OUT = 1.8 V
V
OUT = -200 mA
OUT = -200 mA
FSEL = L
FSEL = H
2.0
3.0
4.0
5.0
6.0
2.0
3.0
4.0
5.0
6.0
Input voltage VIN (V)
Input voltage VIN (V)
Oscillation frequency vs.
Oscillation frequency vs.
Operating ambient temperature
(2.0 MHz)
Operating ambient temperature
(3.2 MHz)
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
3.6
V
V
IN = 3.7 V
V
V
IN = 3.7 V
OUT = 2.5 V
OUT = 2.5 V
3.4
3.2
3.0
2.8
2.6
2.4
OUT = -200 mA
OUT = -200 mA
FSEL = L
FSEL = H
-50
0
+50
+100
-50
0
+50
+100
Operating ambient temperature Ta ( °C)
Operating ambient temperature Ta ( °C)
(Continued)
DS04-27245-2E
25
MB39C006A
MOS FET
P-ch MOS FET
ON resistance vs. Input voltage
ON resistance vs. Operating ambient temperature
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
VIN = 3.7 V
0.5
0.4
0.3
0.2
0.1
0.0
P-ch
V
IN = 5.5 V
N-ch
Ta = +25°C
−
50
0
+50
+100
2.0
3.0
4.0
5.0
6.0
Operating ambient temperature Ta ( °C)
Input voltage VIN (V)
N-ch MOS FET
ON resistance vs. Operating ambient temperature
0.6
0.5
VIN = 3.7 V
0.4
0.3
0.2
VIN = 5.5 V
0.1
0.0
−
50
0
+50
+100
Operating ambient temperature Ta ( °C)
(Continued)
26
DS04-27245-2E
MB39C006A
(Continued)
MODE VTH vs. Input voltage
CTL VTH vs. Input voltage
4.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
THHCT
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
THLCT
V
THMMD
Ta = +25°C
V
OUT = 2.5 V
VTHHCT: circuit OFF → ON
VTHLCT: circuit ON → OFF
Ta = +25°C
V
THLMD
V
OUT = 2.5 V
2.0
3.0
4.0
5.0
6.0
2.0
3.0
4.0
5.0
6.0
Input voltage VIN (V)
Input voltage VIN (V)
Power dissipation vs.
Power dissipation vs.
Operating ambient temperature
(with thermal via)
Operating ambient temperature
(without thermal via)
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
2632
1053
980
392
0
0
85
85
−50
0
+50
+100
−50
0
+50
+100
Operating ambient temperature Ta ( °C)
Operating ambient temperature Ta ( °C)
DS04-27245-2E
27
MB39C006A
• Switching waveforms
• PFM/PWM operation
1 μs/div
V
OUT :
20 mV/div (AC)
1
V
LX : 2.0 V/div
2
I
LX : 500 mA/div
4
VIN = 3.7 V, IOUT = −20 mA, VOUT = 2.5 V, MODE = L, Ta = +25 °C
• PWM operation
1 μs/div
V
OUT:
20 mV/div (AC)
1
VLX : 2.0 V/div
2
I
LX : 500 mA/div
4
V
IN = 3.7 V, IOUT = −800 mA, VOUT = 2.5 V, MODE = L, Ta = +25 °C
28
DS04-27245-2E
MB39C006A
• Output waveforms at sudden load changes (0 A
− 800 mA)
↔
100 μs/div
V
OUT :
200 mV/div
1
V
LX : 2.0 V/div
2
4
−800 mA
I
OUT : 1 A/div
0 A
V
IN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 °C
• Output waveforms at sudden load changes ( − 20 mA
− 800 mA)
↔
100 μs/div
V
OUT :
200 mV/div
1
V
LX : 2.0 V/div
2
−800 mA
I
OUT : 1 A/div
4
− 20 mA
V
IN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 °C
• Output waveforms at sudden load changes ( − 100 mA ↔ − 800 mA)
100 μs/div
V
OUT :
200 mV/div
1
V
LX : 2.0 V/div
2
−800 mA
I
OUT : 1 A/div
4
− 100 mA
IN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 °C
V
DS04-27245-2E
29
MB39C006A
• CTL start-up waveform
(No load, No VREFIN capacitor)
(Maximum load, No VREFIN capacitor)
10 μs/div
10 μs/div
CTL : 5 V/div
CTL : 5 V/div
3
3
V
OUT : 1 V/div
V
OUT : 1 V/div
1
1
V
LX : 5 V/div
VLX : 5 V/div
2
4
2
4
ILX :1 A/div
ILX :1 A/div
V
IN = 3.7 V, IOUT = −800 mA, (3.125 Ω) VOUT = 2.5 V,
V
IN = 3.7 V, IOUT = 0 A, VOUT = 2.5 V, MODE = L, Ta = +25 °C
MODE = L, Ta = +25 °C
(No load, VREFIN capacitor = 0.1 μF)
(Maximum load, VREFIN capacitor = 0.1 μF)
10 ms/div
10 ms/div
CTL : 5 V/div
CTL : 5 V/div
3
3
V
OUT : 1 V/div
V
OUT : 1 V/div
1
1
V
LX : 5 V/div
V
LX : 5 V/div
2
4
2
4
ILX :1 A/div
ILX :1 A/div
V
IN = 3.7 V, IOUT = −800 mA, (3.125 Ω) VOUT = 2.5 V,
V
IN = 3.7 V, IOUT = 0 A, VOUT = 2.5 V, MODE = L, Ta = +25 °C
MODE = L, Ta = +25 °C
30
DS04-27245-2E
MB39C006A
• CTL stop waveform (No load, VREFIN capacitor = 0.1 μF)
10 μs/div
CTL : 5 V/div
3
V
OUT : 1 V/div
1
V
LX : 5 V/div
2
4
ILX :1 A/div
V
IN = 3.7 V, IOUT = −800 mA, (3.125 Ω) VOUT = 2.5 V,
MODE = L, Ta = +25 °C
• Current limitation waveform
2.5 V
OUT : 1 V/div
10 μs/div
V
V
1.5 V
POWERGOOD : 1 V/div
1
2
4
1.2 A
lLX : 1 A/div
600 mA
Current limitation
operation
IOUT = −1.2 A (2.1 Ω) VOUT = 2.5 V, MODE = L,Ta = +25 °C
Normal operation
Normal operation
V
IN = 3.7 V, IOUT = −600 mA (4.2 Ω)
DS04-27245-2E
31
MB39C006A
• Waveform of dynamic output voltage transition (VO1 1.8 V ↔ 2.5 V)
VOUT : 200 mV/div
2.5 V
10 μs/div
1.8 V
1
840 mV
VVRFFIN : 200 mV/div
3
610 mV
VIN = 3.7 V, IO1 = −800 mA, −576 mA (3.125 Ω), MODE = L, Ta = +25 °C, No VREFIN Capacitor
32
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MB39C006A
■ APPLICATION CIRCUIT EXAMPLES
• APPLICATION CIRCUIT EXAMPLE 1
• An external voltage is input to the reference voltage external input (VREFIN) , and the VOUT voltage is set to
2.97 times as much as the VOUT setting gain.
C2
4.7 μF
VIN
10
VDD
V
OUT
CPU
CTL
LX
1
3
8
R5
1 MΩ
L1
2.2 μH
C1
4.7 μF
OUT
9
5
L=PFM/PWM mode
OPEN=PWM fixed mode
MODE
POWER-
GOOD
APLI
L (OPEN) = 2.0 MHz
H = 3.2 MHz
6
4
FSEL
VREF
V
OUT = 2.97 × VREFIN
VREFIN
7
DAC
GND
2
• APPLICATION CIRCUIT EXAMPLE 2
• The voltage of VREF pin is input to the reference voltage external input (VREFIN) by the dividing resistors.
The VOUT voltage is set to 2.5 V.
C2
4.7 μF
VIN
10
VDD
VOUT
3
CPU
1
CTL
LX
R5
1 MΩ
L1
2.2 μH
C1
4.7 μF
OUT
9
5
L=PFM/PWM mode
OPEN=PWM fixed mode
8
6
MODE
FSEL
POWER-
GOOD
APLI
L (OPEN) = 2.0 MHz
H = 3.2 MHz
R3 127.5 kΩ
R3(120 kΩ + 7.5 kΩ)
VOUT = 2.97 × VREFIN
4
7
VREF
R4
R3 + R4
VREFIN =
× VREF
VREFIN
(VREF = 1.20 V)
R4
300 kΩ
GND
2
300 kΩ
127.5 kΩ + 300 kΩ
VOUT = 2.97 ×
× 1.20 V = 2.5 V
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33
MB39C006A
• Application Circuit Example Components List
Component
Item
Part Number
VLF4012AT-2R2M
MIPW3226D2R2M
Specification
2.2 μH, RDC = 76 mΩ
2.2 μH, RDC = 100 mΩ
Package
SMD
Vendor
TDK
L1
Inductor
SMD
FDK
Ceramic
capacitor
C1
C2
R3
C2012JB1A475K
4.7 μF (10 V)
2012
2012
TDK
TDK
KOA
Ceramic
capacitor
C2012JB1A475K
4.7 μF (10 V)
7.5 kΩ
RK73G1JTTD D 7.5 kΩ
RK73G1JTTD D 120 kΩ 120 kΩ
1608
1608
Resistor
R4
R5
Resistor
Resistor
RK73G1JTTD D 300 kΩ 300 kΩ
1608
1608
KOA
KOA
RK73G1JTTD D
1 MΩ 0.5%
TDK : TDK Corporation
FDK : FDK Corporation
KOA : KOA Corporation
34
DS04-27245-2E
MB39C006A
■ USAGE PRECAUTIONS
1. Do not configure the IC over the maximum ratings
If the lC is used over the maximum ratings, the LSl may be permanently damaged.
It is preferable for the device to normally operate within the recommended usage conditions. Usage outside of
these conditions can adversely affect reliability of the LSI.
2. Use the devices within recommended operating conditions
The recommended operating conditions are the conditions under which the LSl is guaranteed to operate.
The electrical ratings are guaranteed when the device is used within the recommended operating conditions
and under the conditions stated for each item.
3. Printed circuit board ground lines should be set up with consideration for common
impedance
4. Take appropriate static electricity measures.
• Containers for semiconductor materials should have anti-static protection or be made of conductive material.
• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
• Work platforms, tools, and instruments should be properly grounded.
• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.
5. Do not apply negative voltages.
The use of negative voltages below − 0.3 V may create parasitic transistors on LSI lines, which can cause
abnormal operation.
■ ORDERING INFORMATION
Part number
Package
Remarks
10-pin plastic SON
(LCC-10P-M04)
MB39C006APN
■ RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION
The LSI products of FUJITSU MICROELECTRONICS with “E1” are compliant with RoHS Directive, and has
observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), and
polybrominated diphenylethers (PBDE).
A product whose part number has trailing characters “E1” is RoHS compliant.
DS04-27245-2E
35
MB39C006A
■ LABELING SAMPLE (LEAD FREE VERSION)
Lead-free mark
JEITA logo JEDEC logo
MB123456P - 789 - GE1
(3N) 1MB123456P-789-GE1 1000
G
Pb
(3N)2 1561190005 107210
QC PASS
PCS
1,000
MB123456P - 789 - GE1
ASSEMBLED IN JAPAN
2006/03/01
MB123456P - 789 - GE1
1/1
1561190005
0605 - Z01A 1000
“ASSEMBLED IN CHINA” is printed on the label
of a product assembled in China.
The part number of a lead-free product has
the trailing characters “E1”.
■ MARKING FORMAT
Lead-free version
INDEX
36
DS04-27245-2E
MB39C006A
■ RECOMMENDED MOUNTING CONDITIONS of MB39C006APN
[FUJITSU MICROELECTRONICS Recommended Mounting Conditions]
Item
Condition
Mounting Method
Mounting times
IR (infrared reflow), warm air reflow
2 times
Before opening
Please use it within two years after
manufacture.
Storage period
From opening to the 2nd
reflow
Storage conditions
5 °C to 30 °C, 70%RH or less (the lowest possible humidity)
[Parameters for Each Mounting Method]
IR (infrared reflow)
260°C
255°C
170 °C
~
190 °C
(b)
(c)
(d)
(e)
RT
(a)
(d')
H rank : 260 °C Max
(a) Temperature Increase gradient : Average 1 °C/s to 4 °C/s
(b) Preliminary heating : Temperature 170 °C to 190 °C, 60s to 180s
(c) Temperature Increase gradient : Average 1 °C/s to 4 °C/s
(d) Actual heating
: Temperature 260 °C Max; 255 °C or more, 10s or less
(d’)
: Temperature 230 °C or more, 40s or less
or
Temperature 225 °C or more, 60s or less
or
Temperature 220 °C or more, 80s or less
(e) Cooling
: Natural cooling or forced cooling
Note : Temperature : the top of the package body
DS04-27245-2E
37
MB39C006A
■ EVALUATION BOARD SPECIFICATION
The MB39C006A Evaluation Board provides the proper environment for evaluating the efficiency and other
characteristics of the MB39C006A.
• Terminal information
Symbol
Functions
Power supply terminal.
In standard condition 3.1 V to 5.5 V*.
VIN
* When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices
with a standard output voltage (VOUT = 2.5 V) and VIN < 3.1 V, FUJITSU MICRO-
ELECTRONICS recommends to change the output capacity (C1) to 10 μF.
VOUT
VCTL
Output terminal.
Power supply terminal for setting the CTL terminal.
Use this terminal by connecting with VIN (When SW is mounted).
Direct supply terminal of CTL.
CTL
CTL = 0 V to 0.80 V (Typ) : Shutdown
CTL = 0.95 V (Typ) to VIN : Normal operation
Direct supply terminal of MODE.
MODE
MODE = 0 V to 0.4 V (Max)
: PFM/PWM mode
MODE = OPEN (Remove R6) : PWM mode
Reference voltage output terminal.
VREF = 1.20 V (Typ)
VREF
External reference voltage input terminal.
When an external reference voltage is supplied, connect to this terminal.
VREFIN
Operating frequency range setting terminal.
FSEL = 0 V : 2.0 MHz operation
FSEL = VIN : 3.2 MHz operation*
FSEL
* FUJITSU MICROELECTRONICS recommends to change the inductor to 1.5 μH.
POWERGOOD output terminal.
“High” level output when OUT voltage reaches 97% or more of output setting voltage.
POWERGOOD
Ground terminal.
PGND
AGND
Connect power supply GND to the PGND terminal next to the VOUT terminal.
Ground terminal.
• Startup terminal information
Terminal name
Condition
Functions
ON/OFF switch for the IC.
L : Shutdown
L : Open
H : Connect to VIN
CTL
H : Normal operation
Setting switch of FSEL terminal.
L : 2.0 MHz operation
H : 3.2 MHz operation
L : Open
H : Connect to VIN
FSEL
• Jumper information
JP
Functions
JP1
JP2
Normally used shorted (0 Ω)
Not mounted
38
DS04-27245-2E
MB39C006A
• Setup and checkup
(1) Setup
(1) -1. Connect the CTL terminal to the VIN terminal.
(1) -2. Connect the power supply terminal to the VIN terminal, and the power supply GND terminal to the
PGND terminal. (Example of setting power supply voltage : 3.7 V)
(2) Checkup
Supply power to VIN. The IC is operating normally if VOUT = 2.5 V (Typ).
• Component layout on the evaluation board (Top View)
MODE
VCTL
JP2
SW1
R8
VIN
CTL
FSEL
C3
R4
JP1
C2
FSEL
R6
R3-2
R3-1
PGND
VOUT
M1
L1
C1
R1
CTL
AGND
POWER_GOOD VREF
VREFIN
MB39C006AEVB-06 Rev.2.0
DS04-27245-2E
39
MB39C006A
• Evaluation board layout (Top View)
Top Side (Layer1)
Inner Side (Layer2)
Inner Side(Layer 3)
Bottom Side(Layer 4)
40
DS04-27245-2E
MB39C006A
• Connection diagram
I
IN
VIN
C2
4.7 µF
L1
JP2
10
VDD
IOUT
2.2 µH
SW1-1
VOUT
LX 1
VCTL
CTL
CTL
3
8
R5
C1
4.7 µF
MB39C006A
1MΩ
JP1
9
5
OUT
R1
1MΩ
MODE
MODE
POWER-
GOOD
POWER-
GOOD
R6
SW1-2
FSEL
6
4
FSEL
VREF
VREF
PGND
R3-1
7.5 kΩ
AGND
R3-2
120 kΩ
VREFIN
VREFIN
7
GND
2
*
Not mounted
R4
300 kΩ
C6
0.1 µF
DS04-27245-2E
41
MB39C006A
• Component list
Component
Part Name
Model Number
Specification
Package
Vendor
Remark
M1
IC
MB39C006APN
⎯
SON10
FML
2.2 μH,
RDC=76 mΩ
L1
Inductor
VLF4012AT-2R2M
SMD
TDK
C1
C2
C6
Ceramic capacitor
Ceramic capacitor
Ceramic capacitor
C2012JB1A475K
C2012JB1A475K
C1608JB1H104K
4.7 μF (10 V)
4.7 μF (10 V)
0.1 μF (50 V)
2012
2012
1608
TDK
TDK
TDK
RK73G1JTTD D
R1
Resister
1 MΩ 0.5%
1608
KOA
1 MΩ
R3-1
R3-2
R4
Resister
Resister
Resister
RR0816P-752-D
RR0816P-124-D
RR0816P-304-D
7.5 kΩ 0.5%
120 kΩ 0.5%
300 kΩ 0.5%
1608
1608
1608
SSM
SSM
SSM
RK73G1JTTD D
R5
R6
Resister
Resister
DIP switch
Jumper
1 MΩ 0.5%
0 Ω, 1A
⎯
1608
1608
⎯
KOA
KOA
⎯
1 MΩ
RK73Z1J
Not
mounted
SW1
JP1
JP2
⎯
RK73Z1J
⎯
0 Ω, 1A
⎯
1608
⎯
KOA
⎯
Not
mounted
Jumper
Note : These components are recommended based on the operating tests authorized.
FML
TDK
KOA
SSM
: FUJITSU MICROELECTRONICS LIMITED
: TDK Corporation
: KOA Corporation
: SUSUMU Co., Ltd
■ EV BOARD ORDERING INFORMATION
EV Board Part No.
EV Board Version No.
MB39C006AEVB-06 Rev.2.0
Remarks
SON10
MB39C006AEVB-06
42
DS04-27245-2E
MB39C006A
■ PACKAGE DIMENSION
10-pin plastic SON
Lead pitch
0.50 mm
3.00 mm × 3.00 mm
Plastic mold
Package width ×
package length
Sealing method
Mounting height
Weight
0.75 mm MAX
0.018 g
(LCC-10P-M04)
10-pin plastic SON
(LCC-10P-M04)
3.00±0.10
(.118±.004)
2.40±0.10
(.094±.004)
10
6
INDEX AREA
1.70±0.10
(.067±.004)
3.00±0.10
(.118±.004)
0.40±0.10
(.016±.004)
1
5
1PIN CORNER
(C0.30(C.012))
0.50(.020)
TYP
0.25±0.03
(.010±.001)
0.75(.030)
MAX
0.15(.006)
0.05(.002)
0.00 +–00..0005
+.002
(.000
)
–.000
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
C
2008 FUJITSU MICROELECTRONICS LIMITED C10004S-c-1-2
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
DS04-27245-2E
43
MB39C006A
■ CONTENTS
page
- DESCRIPTION ................................................................................................................................................ 1
- FEATURES ...................................................................................................................................................... 1
- APPLICATIONS .............................................................................................................................................. 1
- PIN ASSIGNMENT ......................................................................................................................................... 2
- PIN DESCRIPTIONS ...................................................................................................................................... 2
- I/O PIN EQUIVALENT CIRCUIT DIAGRAM ............................................................................................... 3
- BLOCK DIAGRAM .......................................................................................................................................... 4
- FUNCTION OF EACH BLOCK ..................................................................................................................... 6
- ABSOLUTE MAXIMUM RATINGS ............................................................................................................... 8
- RECOMMENDED OPERATING CONDITIONS ........................................................................................ 9
- ELECTRICAL CHARACTERISTICS ............................................................................................................ 10
- TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS ............................ 12
- APPLICATION NOTES .................................................................................................................................. 13
- EXAMPLE OF STANDARD OPERATION CHARACTERISTICS ........................................................... 18
- APPLICATION CIRCUIT EXAMPLES ......................................................................................................... 33
- USAGE PRECAUTIONS ............................................................................................................................... 35
- ORDERING INFORMATION ......................................................................................................................... 35
- RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION .............................................. 35
- LABELING SAMPLE (LEAD FREE VERSION) ......................................................................................... 36
- MARKING FORMAT ....................................................................................................................................... 36
- RECOMMENDED MOUNTING CONDITIONS of MB39C006APN ........................................................ 37
- EVALUATION BOARD SPECIFICATION ................................................................................................... 38
- EV BOARD ORDERING INFORMATION ................................................................................................... 42
- PACKAGE DIMENSION ................................................................................................................................ 43
44
DS04-27245-2E
MB39C006A
MEMO
DS04-27245-2E
45
MB39C006A
MEMO
46
DS04-27245-2E
MB39C006A
MEMO
DS04-27245-2E
47
MB39C006A
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,
Shinjuku-ku, Tokyo 163-0722, Japan
Tel: +81-3-5322-3329
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
Asia Pacific
FUJITSU MICROELECTRONICS AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
FUJITSU MICROELECTRONICS ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://www.fmal.fujitsu.com/
Europe
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm. 3102, Bund Center, No.222 Yan An Road (E),
Shanghai 200002, China
Tel : +86-21-6146-3688 Fax : +86-21-6335-1605
http://cn.fujitsu.com/fmc/
FUJITSU MICROELECTRONICS EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
Korea
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road,
Tsimshatsui, Kowloon, Hong Kong
Tel : +852-2377-0226 Fax : +852-2376-3269
http://cn.fujitsu.com/fmc/en/
FUJITSU MICROELECTRONICS KOREA LTD.
206 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fmk/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to
the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear
facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon
system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
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