HMC324MS8G_01 [HITTITE]
GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz; 砷化镓的InGaP HBT MMIC双驱动器放大器， DC - 3.0 GHz的
| 型号： | HMC324MS8G_01 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz |
| 文件： | 总6页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC324MS8G
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
Typical Applications
Features
This Amplifier is ideal for RF Systems
where high linearity is required such as:
P1dB Output Power: +16 dBm
Output IP3: +30 dBm
Gain: 13 dB
1
• CATV Head-End and Modem
• Cellular & Base Stations
• MMDS
Single Supply: 8.75V
Ultra Small Package: MSOP8G
• WirelessLAN
Functional Diagram
General Description
The HMC324MS8G is a high efficiency GaAs InGaP
Heterojunction BipolarTransistor (HBT) MMIC ampli-
fier that contains two non-connected amplifiers in
parallel inside an 8 lead MSOPG package. When
used in conjunction with an external balun, the out-
puts of the amplifier can be combined to reduce
the 2nd harmonic distortion that is generated by
the amplifier. With Vcc at +7.5V, the HMC324MS8G
offers 13 dB of gain and with power combining and
harmonic cancellation, +24 dBm of output power
can be achieved. Using a Darlington feedback pair
results in reduced sensitivity to normal process vari-
ations and provides a good 50-ohm input/output
port match. This amplifier is ideal for RF systems
where high linearity is required and can operate in
50-ohm and 75-ohm systems.
Electrical Specifications,TA = +25° C
Vs= +8.75V, Rbias= 22 Ohm
Parameter
Units
Min.
10
Typ.
DC - 3.0
13
Max.
Frequency Range
GHz
dB
Gain
16
Gain Variation Over Temperature
Input Return Loss
0.015
15
0.025
dB/ °C
dB
10
6
Output Return Loss
9
dB
Reverse Isolation
16
13
18
27
20
dB
Output Power for 1dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Noise Figure
16
dBm
dBm
dBm
dB
21
30
6
Supply Current (Icc)
57
mA
Note: All specifications refer to a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 158
HMC324MS8G
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
GaAs MMIC SUB-HARMONICALLY GPaUinMvPs.ETDemMpeIrXaEtuRre 17 - 25 GHz
Gain & Return Loss
20
15
10
5
20
18
16
14
12
10
8
1
S21
S11
S22
0
-5
-10
-15
-20
-25
6
+25 C
+60 C
-40 C
4
2
0
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
+25 C
+60 C
-40 C
-5
-10
-15
-20
-25
-5
-10
+25 C
+60 C
-40 C
-15
-20
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
0
+25 C
+60 C
-40 C
-5
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 159
HMC324MS8G
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
GaAs MMIC SUB-HARMONICALLY PPsUatMvPs.ETeDmMpeIrXatEuRre 17 - 25 GHz
P1dB vs.Temperature
24
22
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
1
+25 C
+60 C
-40 C
+25 C
+60 C
-40 C
6
6
4
4
2
2
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 1 GHz
Power Compression @ 2 GHz
22
20
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
0
-2
-4
-6
2
0
Pout
Gain
PAE
Pout
Gain
PAE
-2
-4
-6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs.Temperature
34
32
30
28
26
24
22
20
18
16
14
+25 C
+60 C
-40 C
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 160
HMC324MS8G
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
Absolute Maximum Ratings
1
DC Voltage on Pin 1
8 Volts
Input Power (RFin)(Vcc= +5V)
Channel Temperature (Tc)
+20 dBm
150 °C
Continuous Pdiss (T= 85 °C)
(derate 4.41 mW/°C above 85 °C)
507 mW
Storage Temperature
Operating Temperature
-65 to +150° C
-40 to +85° C
Outline Drawing
1. MATERIAL:
4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH
USING WHITE INK, LOCATED APPROX AS SHOWN
A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED
PLASTIC, SILICA & SILICONE INPREGNATED.
B. LEADFRAME MATERIAL: COPPER ALLOY
5. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.15mm PER SIDE.
2. PLATING: LEAD-TIN SOLDER PLATE
6. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.25mm PER SIDE.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 161
HMC324MS8G
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
Application Circuit
1
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1 and 4.
2. External blocking capacitors are required on Pins 1, 4, 5, and 8.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 162
HMC324MS8G
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
Evaluation PCB for HMC324MS8G
1
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50
ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane
similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from Hittite upon request.
Evaluation Circuit Board Layout Design Details
Item
Description
J1 - J4
U1
PC Mount SMA Connector
HMC324MS8G
PCB*
104221 Evaluation PCB 1.5" x 1.5"
* Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 163
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