HMC326MS8GETR [HITTITE]
Wide Band Medium Power Amplifier, 3000MHz Min, 4500MHz Max, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8;
| 型号： | HMC326MS8GETR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Wide Band Medium Power Amplifier, 3000MHz Min, 4500MHz Max, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8 射频 微波 |
| 文件： | 总6页 (文件大小：1028K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Typical Applications
Features
The HMC326MS8G / HMC326MS8GE is ideal for:
Psat Output Power: +26 dBm
• Microwave Radios
> 40% PAE
• Broadband Radio Systems
Output IP3: +36 dBm
High Gain: 21 dB
• Wireless Local Loop Driver Amplifier
Vs: +5V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver amplifiers which
operate between 3.0 and 4.5 GHz. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplifier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplifier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
3.0 - 4.5
21
Max.
Units
GHz
dB
Frequency Range
Gain
18
Gain Variation Over Temperature
Input Return Loss
0.025
12
0.035
dB / °C
dB
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
7
dB
21
32
23.5
26
dBm
dBm
dBm
dB
36
5
Supply Current (Icc)
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
Vpd = 0V
Vpd = 5V
1
uA
110
130
7
160
mA
mA
tOn/tOff
10
ns
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
25
23
21
S21
S11
S22
0
19
-5
+25C
+85C
-40C
-10
-15
-20
17
15
3
3.25
3.5
3.75
4
4.25
4.5
2
2.5
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
30
30
28
26
24
22
20
28
26
24
22
20
+25C
+85C
-40C
+25C
+85C
-40C
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
Power Compression @ 3.5 GHz
40
45
40
35
30
25
20
15
10
38
36
34
+25C
+85C
-40C
32
30
Output Power (dBm)
Gain (dB)
PAE (%)
5
0
-8
-6
-4
-2
0
2
4
6
8
10
12
3
3.25
3.5
3.75
4
4.25
4.5
INPUT POWER (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-3
-6
+25C
-5
+85C
-40C
-10
-9
-15
-20
+25C
+85C
-40C
-12
-15
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
-10
8
6
-20
+25C
+85C
-40C
-30
-40
-50
-60
4
+25C
+85C
-40C
2
0
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Quiescent Supply
Current vs. Vpd @3.5 GHz
27
150
PSAT
P1dB
24
21
18
15
12
120
90
60
30
0
GAIN
Icc
1.5
2
2.5
3
3.5
4
4.5
5
Vpd (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage Range (Vpd)
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
+5.5 Vdc
+5.5 Vdc
+15 dBm
150 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
0.916 W
71 °C/W
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H326
XXXX
HMC326MS8G
Low Stress Injection Molded Plastic
Sn/Pb Solder
H326
XXXX
MSL1 [2]
HMC326MS8GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Evaluation PCB
List of Materials for Evaluation PCB 104356 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PCB Mount SMA RF Connector
2mm DC Header
C1 - C2
330 pF Capacitor, 0603 Pkg.
C3
C4
C5
L1
0.7 pF Capacitor, 0603 Pkg.
3.0 pF Capacitor, 0402 Pkg.
2.2 µF Capacitor, Tantalum
3.3 nH Inductor, 0805 Pkg.
HMC326MS8G / HMC326MS8GE
Amplifier
U1
[2]
PCB
104106 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, 10 mil thick, tr = 3.48
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
5
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Application Circuit
TL1
TL2
TL3
50 ohm
0.110”
19.2°
Impedance
50 ohm
0.0614”
10.7°
50 ohm
0.2561”
44.6°
Physical Length
Electrical Length @ 3.75 GHz
Measurement
Center of package pin to
center of capacitor C3.
Center of capacitor C3 to Center of TL for inductor to
center TL for inductor. edge of capacitor C4.
PCB Material: 10 mil Rogers 4350 or Arlon 25FR
Recommended Component Values
L1
3.3 nH
330 pF
C1 - C2
C3
0.7 pF
C4
C5
3.0 pF
2.2 µF
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
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