HMC326MS8 [HITTITE]
GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz; 砷化镓的InGaP HBT MMIC驱动放大器3.0 - 4.5 GHz的
| 型号： | HMC326MS8 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz |
| 文件： | 总6页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Features
Typical Applications
The HMC326MS8G is ideal for:
• Microwave Radios
8
Psat Output Power: +26 dBm
> 40% PAE
• Broadband Radio Systems
Output IP3: +36 dBm
High Gain: 21 dB
• Wireless Local Loop Driver Amplifier
Vs: +5.0V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G is a high efficiency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC driver
amplifier which operates between 3.0 and 4.5 GHz.
The amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for improved
RF and thermal performance. The amplifier provides
21 dB of gain and +26 dBm of saturated power from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when the
amplifier is not in use. Internal circuit matching was
optimized to provide greater than 40% PAE.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
Max.
Units
GHz
dB
Frequency Range
3.0 - 4.5
Gain
18
21
Gain Variation Over Temperature
Input Return Loss
0.025
0.035
dB / °C
dB
12
Output Return Loss
7
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
21
32
23.5
dBm
dBm
dBm
dB
26
36
5
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
Vpd = 0V / 5V
tOn/tOff
0.001 / 130
mA
7
mA
10
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 98
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Broadband Gain & Return Loss
Gain vs.Temperature
25
20
15
8
24
22
20
10
S21
S11
5
S22
0
-5
+25C
+85C
-40C
18
16
-10
-15
-20
3
3.25
3.5
3.75
4
4.25
4.5
2
2.5
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs.Temperature
Psat vs.Temperature
30
30
+25C
+85C
-40C
28
26
24
22
20
28
26
24
22
20
+25C
+85C
-40C
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs.Temperature
Power Compression @ 3.5 GHz
40
45
40
35
30
25
20
15
10
+25C
+85C
-40C
38
36
34
32
30
Output Power (dBm)
Gain (dB)
PAE (%)
5
0
3
3.25
3.5
3.75
4
4.25
4.5
-8
-6
-4
-2
0
2
4
6
8
10
12
FREQUENCY (GHz)
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 99
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
8
0
0
+25C
-3
-6
+85C
-40C
-5
-10
-9
-15
-20
+25C
+85C
-40C
-12
-15
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
Noise Figure vs.Temperature
0
10
9
8
7
6
5
4
3
2
1
0
+25C
+85C
-40C
+25C
+85C
-40C
-10
-20
-30
-40
-50
-60
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Quiescent Supply
Current vs. Vpd @3.5 GHz
27
150
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
130
110
90
70
50
P1dB
Psat
Gain
30
Icc
10
1.5
2
2.5
3
3.5
4
4.5
5
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 100
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Absolute Maximum Ratings
8
Collector Bias Voltage (Vcc)
Control Voltage Range (Vpd)
+5.5 Vdc
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 11.49 mW/°C above 85 °C)
0.747 W
Thermal Resistance
(junction to ground paddle)
87 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 101
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Evaluation PCB
8
List of Material
The circuit board used in the final application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads and exposed
paddle should be connected directly to the ground plane
similar to that shown. A sufficient number of VIA holes
should be used to connect the top and bottom ground
planes. The evaluation board should be mounted to an
appropriate heat sink.The evaluation circuit board shown is
available from Hittite upon request.
Item
J1 - J2
J3
Description
PC Mount SMA RF Connector
2mm DC Header
C1 - C2
C3
330 pF Capacitor, 0603 Pkg.
0.7 pF Capacitor, 0603 Pkg.
3.0 pF Capacitor, 0402 Pkg.
2.2 µF Capacitor, Tantalum
3.3 nH Inductor, 0805 Pkg.
HMC326MS8G Amplifier
104106 Eval Board
C4
C5
L1
U1
PCB*
*Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 102
HMC326MS8G
v04.1203
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Application Circuit
8
Recommended Component Values
L1
C1 - C2
C3
3.3 nH
330 pF
0.7 pF
3.0 pF
2.2 µF
C4
C5
Note 1: C1 should be located < 0.1” (2.54 mm) from pin 8 (Vcc).
Note 2: C2 should be located < 0.1” (2.54 mm) from L1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 103
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HITTITE
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