HMC455LP3 [HITTITE]
InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz; 的InGaP HBT 1/2瓦的高IP3放大器， 1.7 - 2.5 GHz的
| 型号： | HMC455LP3 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
| 文件： | 总8页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC455LP3
v01.0604
MICROWAVE CORPORATION
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Typical Applications
Features
Output IP3: +42 dBm
8
This amplifier is ideal for high linearity applications:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & WCDMA
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3 x 3 x 1 mm QFN SMT Package
• PHS
Functional Diagram
General Description
The HMC455LP3 is a high output IP3 GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
½ watt MMIC amplifier operating between 1.7
and 2.5 GHz. Utilizing a minimum number of
external components the amplifier provides 13
dB of gain and +28 dBm of saturated power at
56% PAE from a single +5 Vdc supply voltage.
The high output IP3 of +42 dBm coupled with
the low VSWR of 1.4:1 makes the HMC455LP3
an ideal driver amplifier for PCS/3G wireless
infrastructure. A low cost, leadless 3x3 mm QFN
surface mount package (LP3) houses the linear
amplifier. The LP3 provides an exposed base for
excellent RF and thermal performance.
Electrical Specifications,TA = +25° C, Vs= +5V
Parameter
Min.
Typ.
1.7 - 1.9
13.5
0.012
13
Max.
Min.
Typ.
1.9 - 2.2
13
Max.
0.02
Min.
9
Typ.
2.2 - 2.5
11.5
0.012
10
Max.
0.02
Units
GHz
dB
Frequency Range
Gain
11.5
10.5
Gain Variation Over Temperature
Input Return Loss
0.02
0.012
15
dB / °C
dB
Output Return Loss
10
18
15
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
24
37
27
24.5
39
27.5
28
23
37
26
dBm
dBm
dBm
dB
28.5
40
27
42
40
7
6
6
Supply Current (Icq)
150
150
150
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 264
HMC455LP3
v01.0604
MICROWAVE CORPORATION
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Broadband Gain & Return Loss
Gain vs.Temperature
8
15
20
19
18
17
16
15
14
13
12
11
10
10
5
S21
S11
S22
0
-5
-10
-15
-20
-25
+25C
+85C
-40C
9
8
7
6
5
1
1.5
2
2.5
3
1.5 1.6 1.7 1.8 1.9
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
-5
-10
-15
+25C
+85C
-40C
-5
-10
-15
-20
-25
-20
+25C
+85C
-40C
-25
-30
1.5 1.6 1.7 1.8 1.9
FREQUENCY (GHz)
1.5 1.6 1.7 1.8 1.9
2
2.1 2.2 2.3 2.4 2.5
2
2.1 2.2 2.3 2.4 2.5
FREQUENCY (GHz)
P1dB vs.Temperature
Psat vs.Temperature
30
29
28
27
26
25
24
30
29
28
27
26
25
24
23
22
21
20
23
+25C
+25C
+85C
-40C
22
21
20
+85C
-40C
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 265
HMC455LP3
v01.0604
MICROWAVE CORPORATION
GaAs InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Output IP3 vs.Temperature
Noise Figure vs.Temperature
8
10
9
44
43
42
41
40
39
38
37
36
35
8
7
6
5
4
3
34
33
32
+25C
+25C
2
1
0
+85C
-40C
+85C
-40C
31
30
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 1.95 GHz
Power Compression @ 2.15 GHz
60
56
60
56
52
48
44
40
36
32
28
24
20
16
12
8
Pout
Gain
PAE
52
48
44
40
36
32
28
24
20
16
12
8
Pout
Gain
PAE
4
4
0
0
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18 20
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18 20
INPUT POWER (dBm)
INPUT POWER (dBm)
Gain, Power & IP3 vs.
Supply Voltage @ 1.95 GHz
Reverse Isolation vs.Temperature
44
40
36
32
28
24
20
16
12
8
0
+25C
-5
+85C
-40C
-10
-15
-20
-25
-30
Gain
P1dB
Psat
OIP3
4.5
4.7
5
5.2
5.5
1.5 1.6 1.7 1.8 1.9
2
2.1 2.2 2.3 2.4 2.5
Vs (Vdc)
FREQUENCY (GHz)
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 266
HMC455LP3
v01.0604
MICROWAVE CORPORATION
GaAs InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
ACPR vs. Supply Voltage @ 1.96 GHz
CDMA 2000, 9 Channels Forward
ACPR vs. Supply Voltage @ 2.14 GHz
W-CDMA, 64 DPCH
8
-40
-30
-35
-45
-50
-55
-60
-65
CDMA2000 Rev. 8
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
WCDMA
Frequency : 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
-40
-45
-50
-55
-60
-65
4.5V
5V
4.5V
5V
5.5V
5.5V
Source ACPR
17 19
Source ACPR
17 19
5
7
9
11
13
15
21
5
7
9
11
13
15
21
Channel Output Power (dBm)
Channel Output Power (dBm)
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 267
HMC455LP3
v01.0604
MICROWAVE CORPORATION
GaAs InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Absolute Maximum Ratings
8
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc) +30 dBm
Junction Temperature
150 °C
1.04 W
Continuous Pdiss (T = 85 °C)
(derate 16 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
63 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 268
HMC455LP3
v01.0604
MICROWAVE CORPORATION
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Pin Descriptions
8
Pin Number
Function
Description
Interface Schematic
1, 2, 4 - 9,
11 - 16
N/C
This pin may be connected to RF ground.
This pin is AC coupled.
An off chip series matching capacitor is required.
3
RFIN
10
RFOUT
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
Application Circuit
Recommended Component Values
TL1
TL2
50 Ohm
0.18”
19°
TL3
50 Ohm
0.13”
TL4
50 Ohm
0.04”
4°
L1
C1
8.2 nH
2.2 µF
3.0 pF
0.9 pF
100 pF
Impedance
50 Ohm
0.33”
34°
Physical Length
Electrical Length
C2, C3
C4
13.5°
PCB Material: 10 mil Rogers 4350, Er = 3.48
C5
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 269
HMC455LP3
v01.0604
MICROWAVE CORPORATION
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Evaluation PCB
8
J3
Pin Number
1, 2, 3
Description
GND
4, 5, 6
Vs
List of Materials
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads
and exposed paddle should be connected directly to the
ground plane similar to that shown. A sufficient number
of VIA holes should be used to connect the top and
bottom ground planes. The evaluation board should be
mounted to an appropriate heat sink. The evaluation cir-
cuit board shown is available from Hittite upon request.
Item
J1 - J2
J3
Description
PC Mount SMA Connector
2 mm DC Header
C1
2.2 µF Capacitor, Tantalum
3.0 pF Capacitor, 0402 Pkg.
0.9 pF Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
8.2 nH Inductor, 0402 Pkg.
HMC455LP3 Power Amplifier
106492 Evaluation PCB, 10 mils
C2, C3
C4
C5
L1
U1
PCB*
* Circuit Board Material: Rogers 4350, Er = 3.48
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 270
HMC455LP3
v01.0604
MICROWAVE CORPORATION
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Notes:
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 271
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