HMC457QS16GTR [HITTITE]
Narrow Band Medium Power Amplifier,;
| 型号： | HMC457QS16GTR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Narrow Band Medium Power Amplifier, 射频 微波 |
| 文件： | 总10页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Typical Applications
Features
The HMC457QS16G / HMC457QS16GE is ideal for
applications requiring a high dynamic range amplifier:
Output IP3: +46 dBm
Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
• CDMA & W-CDMA
• GSM, GPRS & Edge
• Base Stations & Repeaters
+25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
Integrated Power Control (Vpd)
11
QSOP16G SMT Package: 29.4 mm2
Included in the HMC-DK002 Designer’s Kit
Functional Diagram
General Description
The HMC457QS16G & HMC457QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 1.7 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amplifier
gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the amplifier output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC457QS16G & HMC457QS16GE ideal power
amplifiers for Cellular/3G base station & repeater
applications.
Electrical Specifications, TA = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V [1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
MHz
dB
Frequency Range
1710 - 1990
2010 - 2170
Gain
24
27
0.025
11
22
25
0.025
11
Gain Variation Over Temperature
Input Return Loss
0.035
0.035
dB / °C
dB
Output Return Loss
8
5
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
26
42
29
27.5
42
30.5
32
dBm
dBm
dBm
dB
32.5
45
[2]
Output Third Order Intercept (IP3)
45
Noise Figure
6
5
Supply Current (Icq)
Control Current (Ipd)
Bias Current (Vbias)
500
4
500
4
mA
mA
10
10
mA
[1] Specifications and data reflect HMC457QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 240
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain
& Return Loss @ 1900 MHz
Gain vs. Temperature @ 1900 MHz
30
25
20
15
30
28
26
24
22
20
10
5
S21
S11
S22
0
18
16
14
12
10
+25C
+85C
-40C
-5
11
-10
-15
-20
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
2
2.05 2.1
2.05 2.1
2.05 2.1
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 1900 MHz
Output Return Loss
vs. Temperature @ 1900 MHz
0
0
-2
+25C
+85C
-40C
-4
-3
-6
-6
-8
-10
-12
-9
-14
+25C
+85C
-40C
-16
-18
-20
-12
-15
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
2
2.05 2.1
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
FREQUENCY (GHz)
2
FREQUENCY (GHz)
PldB vs. Temperature @ 1900 MHz
Psat vs. Temperature @ 1900 MHz
34
34
32
30
28
26
32
30
28
26
+25 C
+85 C
-40 C
24
24
+25 C
+85 C
-40 C
22
22
20
20
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
2
2.05 2.1
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
2
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 241
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Noise Figure vs.
Output IP3 vs. Temperature @ 1900 MHz
Temperature @ 1900 MHz
50
10
9
48
46
44
42
8
7
6
5
4
40
+25 C
+85 C
3
11
-40 C
38
+25 C
+85 C
-40 C
2
1
0
36
34
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
FREQUENCY (GHz)
2
2.05 2.1
1.6
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
50
45
40
35
30
25
50
45
40
35
30
25
20
20
Gain
P1dB
Psat
OIP3
Gain
P1dB
15
10
15
Psat
OIP3
10
5
5
4.5
4.75
5
5.25
5.5
440
480
520
560
600
Vs (Vdc)
Icq (mA)
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
Power Compression @ 1900 MHz
50
-30
45
5V
-40
Pout (dBm)
Gain (dB)
PAE (%)
40
35
30
25
20
15
10
5
4.5V
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-50
-60
-70
-80
-90
5.5V
Source ACPR
0
-10 -8
-6
-4
-2
0
2
4
6
8
10 12
12
14
16
18
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
* Icq is controlled by varying Vpd.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 242
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain
and Return Loss @ 2100 MHz
Gain vs. Temperature @ 2100 MHz
30
25
20
30
28
26
24
22
15
10
5
S11
S21
S22
0
20
18
16
14
+25C
+85C
-40C
-5
11
-10
-15
-20
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
Output Return Loss
vs. Temperature @ 2100 MHz
vs. Temperature @ 2100 MHz
0
0
-2
-4
-2
-4
-6
-8
-10
-12
-6
-14
+25C
+85C
-40C
+25C
-16
-18
-20
-8
+85C
-40C
-10
1.9
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
FREQUENCY (GHz)
FREQUENCY (GHz)
PldB vs. Temperature @ 2100 MHz
Psat vs. Temperature @ 2100 MHz
34
34
32
30
28
32
30
28
26
26
+25 C
+85 C
+25 C
+85 C
-40 C
-40 C
24
24
22
20
22
20
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 243
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Output IP3
Noise Figure
vs. Temperature @ 2100 MHz
vs. Temperature @ 2100 MHz
50
10
9
48
46
44
42
8
7
6
5
4
40
38
36
34
+25 C
+85 C
-40 C
3
11
2
1
0
+25 C
+85 C
-40 C
1.9
1.95
2
2.05
2.1
2.15
2.2
2.25
2.3
1.9
2
2.1
FREQUENCY (GHz)
2.2
2.3
FREQUENCY (GHz)
Gain, Power & IP3
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
vs. Supply Current @ 2100 MHz*
50
45
40
35
30
25
50
45
40
35
30
25
20
20
Gain
Gain
P1dB
P1dB
15
15
10
Psat
OIP3
Psat
OIP3
10
5
5
440
480
520
560
600
4.5
4.75
5
5.25
5.5
Icq (mA)
Vs (Vdc)
ACPR vs. Supply Voltage @ 2140 MHz
Power Compression @ 2100 MHz
W-CDMA, 64 DPCH (Uplink)
50
-30
45
-35
Pout (dBm)
Gain (dB)
PAE (%)
40
W-CDMA
-40
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
35
-45
5.5V
30
25
20
15
10
5
-50
-55
-60
-65
-70
-75
5V
4.5V
Source ACPR
0
-10 -8
-6
-4
-2
0
2
4
6
8
10 12
12
14
16
18
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
*Icq is controlled by varying Vpd
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 244
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Power Dissipation
Absolute Maximum Ratings
3
Collector Bias Voltage (Vcc)
+6 Vdc
Max Pdiss @ +85C
2.8
2.6
2.4
2.2
2
Control Voltage (Vpd)
+5.4 Vdc
+15 dBm
150 °C
RF Input Power (RFIN)(Vs = Vpd = +5 Vdc)
Junction Temperature
1900 MHz
Continuous Pdiss (T = 85 °C)
(derate 42.9 mW/°C above 85 °C)
2.78 W
2100 MHz
1.8
1.6
1.4
1.2
1
Thermal Resistance
(junction to ground paddle)
23.3 °C/W
11
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
-10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current
vs. Supply Voltage
Vs (V)
Icq (mA)
400
4.5
5.0
510
5.5
620
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 245
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Outline Drawing
11
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H457
XXXX
HMC457QS16G
HMC457QS16GE
Low Stress Injection Molded Plastic
Sn/Pb Solder
H457
XXXX
MSL1 [2]
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 246
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
Power supply voltage for the first amplifier stage. External
bypass capacitors are required as shown in the application
schematic.
1
Vcc
11
Ground: Backside of package has exposed metal ground
slug that must also be connected to RF/DC ground.
Vias under the device are required.
2, 4, 5, 7,
9, 16
GND
3
6
8
Vbias
RFIN
Vpd
Power Supply for Bias Circuit
This pin is AC coupled
and matched to 50 Ohms
Power control pin. For maximum power, this pin should be
connected to +5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
10 - 15
RFOUT
RF output and DC bias for the output stage.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 247
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
1900 & 2100 MHz Application Circuit
This circuit was used to specify the performance for 1900 & 2100 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
11
TL1
50 Ohm
0.170”
20°
TL2
50 Ohm
0.080”
9°
Recommended
Component Values
1900 MHz
2100 MHz
Impedance
C1 - C4
C5, C6
C7
100 pF
1000 pF
2.2 μF
100 pF
1000 pF
2.2 μF
Physical Length
Electrical Length
PCB Material: 10 mil Rogers 4350, Er = 3.48
C8
33 pF
33 pF
C9
3.9 pF
2.7 pF
L1, L2
R1
3.9 nH
160 Ohm
3.9 nH
160 Ohm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 248
HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Evaluation PCB
11
List of Materials for Evaluation PCB 106043-1900, 110171-2100 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1, J2
J3, J4
C1 - C4
C5, C6
C7
Description
PCB Mount SMA Connector
2 mm DC Header
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
33 pF Capacitor, 0402 Pkg.
3.9 pF Capacitor, 0603 Pkg. - 1900 MHz
2.7 pF Capacitor, 0603 Pkg. - 2100 MHz
3.9 nH Inductor, 0603 Pkg.
160 Ohm Resistor, 0603 Pkg.
HMC457QS16G / HMC457QS16GE
109585 Evaluation PCB, 10 mils
C8
C9
C9
L1, L2
R1
U1
[2]
PCB
[1] Reference one of these numbers when ordering complete
evaluation PCB depending on frequency of operation.
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 249
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