HMC560 [HITTITE]
GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz; 砷化镓MMIC混频器基波， 24 - 40 GHz的
| 型号： | HMC560 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz |
| 文件： | 总6页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC560
v00.0705
GaAs MMIC FUNDAMENTAL
MIXER, 24 - 40 GHz
Typical Applications
Features
The HMC560 is ideal for:
• Test Equipment & Sensors
• Microwave Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Wide IF Bandwidth: DC - 18 GHz
Input IP3: +21 dBm
High LO/RF Isolation: 35 dB
3
Passive Double Balanced Topology
Compact Size: 1.14mm x 0.59mm x 0.1mm
Functional Diagram
General Description
The HMC560 chip is a miniature passive double bal-
anced mixer which is fabricated in a GaAs MESFET
process, and can be used as an upconverter or down-
converter from 24-40 GHz in a small chip area. The
wide bandwidth allows this device to be used across
multiple radio bands with a common platform. Excel-
lent isolations are provided by on-chip baluns, and
the chip requires no external components and no
DC bias. Measurements were made with the chip
mounted and ribbon bonded into in a 50-ohm micro-
strip test fixture. Measured data includes the parasi-
ticeffects of the assembly. RF connections to the chip
were made with 0.076mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
Electrical Specifications, TA = +25° C, IF = 1GHz, LO = +13 dBm*
Parameter
Min.
Typ.
24 - 36
DC - 18
Max.
Min.
Typ.
Max.
Units
GHz
GHz
Frequency Range, RF & LO
36 - 40
DC - 18
Frequency Range, IF
Conversion Loss
8
10
10
10
13
13
dB
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
8
10
35
28
28
21
50
15
dB
dB
28
20
12
35
30
20
19
50
13
27
18
18
dB
dB
dBm
dBm
dBm
IP2 (Input)
1 dB Compression (Input)
* Unless otherwise noted, all measurements performed as downconverter
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC560
v00.0705
GaAs MMIC FUNDAMENTAL
MIXER, 24 - 40 GHz
Conversion Gain vs.
Temperature @ LO = +13 dBm
Isolation @ LO = +13 dBm
0
0
-10
-20
-30
-40
-50
LO/RF
RF/IF
LO/IF
-5
3
-10
+25 C
+85 C
-55 C
-15
-20
24
26
28
30
32
34
36
38
40
42
44
44
42
24
26
28
30
32
34
36
38
40
42
44
20
40
RF FREQUENCY (GHz)
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
IF Bandwidth @ LO = +13 dBm
0
0
-5
-5
-10
-15
-10
+7 dBm
+9 dBm
+11 dBm
+13 dBm
+15 dBm
-15
Conversion Gain
IF Return Loss
-20
-20
24
26
28
30
32
34
36
38
40
42
0
2
4
6
8
10
12
14
16
18
RF FREQUENCY (GHz)
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain @ LO = +13 dBm
Return Loss @ LO = +13 dBm
0
0
-5
-10
-15
-5
-10
-15
-20
RF
LO
-20
-25
24
26
28
30
32
34
36
38
40
24
26
28
30
32
34
36
38
RF FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 199
HMC560
v00.0705
GaAs MMIC DOUBLE-BALANCED
MIXER, 24 - 40 GHz
Input IP3 vs.
Temperature @ LO = +13 dBm *
Input IP3 vs. LO Drive *
25
25
20
15
10
5
20
15
3
10
+9 dBm
+11 dBm
+13 dBm
+15 dBm
+25 C
+85 C
-55 C
5
0
0
24
26
28
30
32
34
36
38
38
38
40
40
40
24
26
28
30
32
34
36
38
38
38
40
40
40
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Input IP2 vs.
Temperature @ LO = +13 dBm *
Input IP2 vs. LO Drive *
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
+9 dBm
+11 dBm
+13 dBm
+15 dBm
20
+25 C
+85 C
-55 C
10
0
24
26
28
30
32
34
36
24
26
28
30
32
34
36
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Upconverter Performance
Input IP3 @ LO = +13 dBm
Input P1dB vs.
Temperature @ LO = +13 dBm
25
20
20
15
10
5
15
10
+25 C
+85 C
-55 C
5
0
0
24
26
28
30
32
34
36
24
26
28
30
32
34
36
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
* Two-tone input power = -10 dBm each tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC560
v00.0705
GaAs MMIC DOUBLE-BALANCED
MIXER, 24 - 40 GHz
MxN Spurious Outputs
as a Down Converter
Absolute Maximum Ratings
RF / IF Input
+25 dBm
nLO
LO Drive
+23 dBm
2 mA
mRF
0
xx
3
1
-5
0
2
3
4
IF DC Current
Channel Temperature
0
1
2
3
4
5
150 °C/W
25
49
73
88
3
Continuous Pdiss (T= 85 °C )
(derate 14.79 mW/ °C above 85 °C)
58
48
78
58
63
85
0.961 W
83
89
Thermal Resistance (RTH
(channel to die bottom)
)
67.6 °C/W
RF = 24 GHz @ -10 dBm
LO = 25 GHz @ +13 dBm
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
All values in dBc below IF output power level.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
Die Packaging Information [1]
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
Standard
Alternate
WP-7
[2]
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE)
COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT
DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED
WITHIN THIS RECTANGULAR AREA.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC560
v00.0705
GaAs MMIC DOUBLE-BALANCED
MIXER, 24 - 40 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is DC coupled and matched to
1
LO
RF
50 Ohms from 24 to 40 GHz.
3
This pad is DC coupled and matched to
50 Ohms from 24 to 40 GHz.
2
3
This pad is DC coupled. For applications not requiring
operation to DC, this port should be DC blocked externally
using a series capacitor whose value has been chosen to
pass the necessary IF frequency range. For operation to
DC, this pad must not source/sink more than 2mA of cur-
rent or die non-function and possible die failure will result.
IF
The backside of the die must be connected
to RF/DC ground.
GND
Assembly Drawing
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 202
HMC560
v00.0705
GaAs MMIC DOUBLE-BALANCED
MIXER, 24 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
3 mil Ribbon Bond
0.076mm
(0.003”)
3
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order to
minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is
recommended to minimize inductance on RF, LO & IF ports.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
3 mil Ribbon Bond
0.076mm
(0.003”)
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD
strikes.
RF Ground Plane
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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