HMC590LP5ETR [HITTITE]
Wide Band Medium Power Amplifier,;
| 型号： | HMC590LP5ETR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Wide Band Medium Power Amplifier, 射频 微波 |
| 文件： | 总8页 (文件大小：882K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Typical Applications
Features
The HMC590LP5 / HMC590LP5E is ideal for use as a
power amplifier for:
Saturated Output Power: +31.5 dBm @ 23% PAE
Output IP3: +40 dBm
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
Gain: 21 dB
DC Supply: +7V @ 820 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm2
• Space
Functional Diagram
General Description
The HMC590LP5 & HMC590LP5E are high dynamic
range GaAs pHEMT MMIC 1 Watt Power Amplifiers
which operate from 6 to 9.5 GHz. The amplifier pro-
vides 21 dB of gain, +31 dBm of saturated power,
and 23% PAE from a +7V supply. This 50 Ohm
matched amplifier does not require any external
components and the RF I/Os are DC blocked for ro-
bust operation. For applications which require op-
timum OIP3, Idd should be set for 520 mA, to yield
+40 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 820 mA,
to yield +30 dBm Output P1dB.
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 820 mA[1]
Parameter
Min.
Typ.
6 - 8
21
Max.
Min.
Typ.
6 - 9.5
21
Max.
Units
GHz
dB
Frequency Range
Gain
18
18
Gain Variation Over Temperature
Input Return Loss
0.05
15
0.05
12
dB/ °C
dB
Output Return Loss
11
10
dB
Output Power for 1 dB
Compression (P1dB)
27
30
27.5
30.5
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Supply Current (Idd)
30.5
40
31
40
dBm
dBm
mA
820
820
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
30
25
20
15
10
5
28
24
20
S21
S11
S22
0
16
-5
-10
-15
-20
-25
+25 C
+85 C
-40 C
12
8
4
5
6
7
8
9
10
11
12
12
10
6
6.5
7
7.5
8
8.5
9
9.5
10
12
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-10
-15
-20
-5
-10
-15
-25
+25 C
+25 C
+85 C
-40 C
+85 C
-20
-25
-40 C
-30
-35
4
5
6
7
8
9
10
11
4
5
6
7
8
9
10
11
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
35
35
33
31
29
27
25
33
31
29
27
25
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
6
6.5
7
7.5
8
8.5
9
9.5
6
6.5
7
7.5
8
8.5
9
9.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
P1dB vs. Current
Psat vs. Current
35
35
33
31
29
27
25
33
31
29
520mA
520mA
620mA
720mA
820mA
620mA
27
720mA
820mA
25
6
6.5
7
7.5
8
8.5
9
9.5
10
10
8
6
6.5
7
7.5
8
8.5
9
9.5
10
14
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 520 mA, Pin/Tone = -15 dBm
Power Compression @ 8 GHz,
7V @ 820 mA
46
35
30
Pout
42
38
Gain
PAE
25
20
15
10
5
34
+25 C
+85 C
-40 C
30
26
0
6
6.5
7
7.5
8
8.5
9
9.5
-14
-10
-6
-2
2
6
10
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IM3, 7V @ 520 mA
Output IM3, 7V @ 820 mA
80
80
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
60
40
60
40
20
0
6 GHz
7 GHz
20
8 GHz
9 GHz
10 GHz
0
-20
-16
-12
-8
-4
0
4
-20
-16
-12
-8
-4
0
4
Pin/Tone (dBm)
Pin/Tone (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Current @ 8 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
34
32
30
28
34
32
30
28
Gain
P1dB
Psat
26
26
Gain
P1dB
Psat
24
24
22
20
18
22
20
18
520
620
720
820
6.5
7
7.5
Idd SUPPLY CURRENT (mA)
Vdd SUPPLY VOLTAGE (Vdc)
Reverse Isolation
vs. Temperature, 7V @ 820 mA
Power Dissipation
0
6
-10
5.5
5
-20
+25 C
+85 C
-40 C
-30
-40
-50
-60
-70
-80
4.5
4
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
3.5
3
6
6.5
7
7.5
8
8.5
9
9.5
10
-14
-10
-6
-2
2
6
10
14
FREQUENCY (GHz)
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Vdd (V)
+6.5
Idd (mA)
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
824
820
815
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm
+7.0
Channel Temperature
175 °C
5.98 W
+7.5
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
Continuous Pdiss (T= 75 °C)
(derate 59.8 mW/°C above 75 °C)
Thermal Resistance
(channel to package bottom)
16.72 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H590
XXXX
HMC590LP5
Low Stress Injection Molded Plastic
Sn/Pb Solder
H590
XXXX
MSL1 [2]
HMC590LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
5
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 6 - 19,
23, 24, 26,
27, 29, 31
N/C
Not connected.
These pins and package bottom must
be connected to RF/DC ground.
3, 5, 20, 22
GND
This pad is AC coupled and
matched to 50 Ohms.
4
RFIN
This pad is AC coupled and
matched to 50 Ohms.
21
RFOUT
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 2.2 µF are required.
25, 28, 30
Vdd 1-3
Gate control for amplifier. Adjust to achieve Idd of 820 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
2.2 µF are required.
32
Vgg
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Application Circuit
Component
C1 - C4
Value
100pF
2.2µF
C5 - C8
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7
HMC590LP5 / 590LP5E
v02.0113
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Evaluation PCB
List of Materials for Evaluation PCB 115927 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Item
Description
J1 - J2
J3
PCB Mount SMA Connector
DC Pin
C1 - C4
C5 - C8
U1
100 pF Capacitor, 0402 Pkg
2.2 µF Capacitor, 1206 Pkg
HMC590LP5 / HMC590LP5E
109001 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
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