HMC591LP5ETR [HITTITE]
Wide Band High Power Amplifier, 1 Func, GAAS,;
| 型号： | HMC591LP5ETR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Wide Band High Power Amplifier, 1 Func, GAAS, 射频和微波 射频放大器 微波放大器 功率放大器 高功率电源 |
| 文件： | 总8页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Typical Applications
Features
The HMC591LP5 / HMC591LP5E is ideal for use as a
power amplifier for:
Saturated Output Power: +33 dBm @ 20% PAE
Output IP3: +41 dBm
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
Gain: 18 dB
DC Supply: +7.V @ 1340 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm2
11
• Space
Functional Diagram
General Description
The HMC591LP5 & HMC591LP5E are high dynamic
range GaAs PHEMT MMIC 2 Watt Power Amplifiers
which operate from 6 to 9.5 GHz. The amplifier
provides 18 dB of gain, +33 dBm of saturated power,
and 19% PAE from a +7V supply. This 50 Ohm mat-
ched amplifier does not require any external
components and the RF I/Os are DC blocked for
robust operation. For applications which require
optimum OIP3, Idd should be set for 940 mA, to
yield +41 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB.
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Parameter
Min.
Typ.
6 - 8
19
Max.
Min.
Typ.
6 - 9.5
18
Max.
Units
GHz
dB
Frequency Range
Gain
16
15
Gain Variation Over Temperature
Input Return Loss
0.05
14
0.05
12
dB/ °C
dB
Output Return Loss
12
10
dB
Output Power for 1 dB
Compression (P1dB)
30
32
30
33
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Supply Current (Idd)
32.5
41
33
41
dBm
dBm
mA
1340
1340
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 302
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
25
15
5
28
24
20
S21
S11
S22
-5
16
11
+25C
-15
-25
12
+85C
-40C
8
4
5
6
7
8
9
10
11
12
12
10
6
6.5
7
7.5
8
8.5
9
9.5
10
12
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
-10
-10
-15
-15
+25C
+85C
-40C
+25C
+85C
-40C
-20
-25
-20
-25
4
5
6
7
8
9
10
11
4
5
6
7
8
9
10
11
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
36
36
34
32
30
28
26
34
32
30
28
26
+25C
+85C
-40C
+25C
+85C
-40C
6
6.5
7
7.5
8
8.5
9
9.5
6
6.5
7
7.5
8
8.5
9
9.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 303
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
P1dB vs. Current
Psat vs. Current
36
36
34
32
30
28
26
34
32
940 mA
1140 mA
1340 mA
30
28
26
11
940 mA
1140 mA
1340 mA
6
6.5
7
7.5
8
8.5
9
9.5
10
10
8
6
6.5
7
7.5
8
8.5
9
9.5
10
18
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 940 mA, Pin/Tone = -15 dBm
Power Compression @ 8 GHz,
7V @ 1340 mA
46
35
30
Pout
42
Gain
PAE
25
38
20
15
10
5
+25C
+85C
-40C
34
30
26
0
6
6.5
7
7.5
8
8.5
9
9.5
-14
-10
-6
-2
2
6
10
14
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IM3, 7V @ 940 mA
Output IM3, 7V @ 1340 mA
100
100
90
80
70
60
50
40
30
20
10
6 GHz
7 GHz
8 GHz
9 GHz
80
60
10 GHz
40
20
0
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
-20
-16
-12
-8
-4
0
4
-20
-16
-12
-8
-4
0
4
Pin/Tone (dBm)
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 304
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Current @ 8 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
36
36
32
32
Gain
Gain
28
28
P1dB
P1dB
Psat
Psat
24
24
11
20
16
20
16
940
1140
1340
6.5
7
7.5
Idd SUPPLY CURRENT (mA)
Vdd SUPPLY VOLTAGE (Vdc)
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
Power Dissipation
0
10
+25C
-20
9
8
7
6
+85C
-40C
-40
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
-60
-80
6
7
8
9
10
-14
-10
-6
-2
2
6
10
14
FREQUENCY (GHz)
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Vdd (V)
+6.5
Idd (mA)
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
1350
1340
1330
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm
+7.0
Channel Temperature
175 °C
+7.5
Continuous Pdiss (T= 75 °C)
(derate 104.3 mW/°C above 75 °C)
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
10.43 W
Thermal Resistance
(channel to package bottom)
9.59 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 305
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Outline Drawing
11
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H591
XXXX
HMC591LP5
Low Stress Injection Molded Plastic
Sn/Pb Solder
H591
XXXX
MSL1 [2]
HMC591LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 306
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1, 2, 6 - 8,
10 - 12, 14, 15,
17 - 19, 23, 24,
26, 27, 29 - 31
N/C
Not connected.
Package bottom has an exposed metal paddle
that must be connected to RF/DC ground.
3, 5, 20, 22
GND
RFIN
11
This pad is AC coupled and
matched to 50 Ohms.
4
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of
100 pF and 2.2 μF are required.
9
Vgg
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 2.2 μF are required.
13, 16, 25, 28, 32
Vdd 1-5
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
21
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 307
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Application Circuit
Component
C1 - C6
Value
100pF
2.2μF
C7 - C12
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 308
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Evaluation PCB
11
List of Materials for Evaluation PCB 108190 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Item
Description
J1 - J2
J3 - J4
C1 - C6
C7 - C12
U1
PCB Mount SMA Connector
DC Pin
100pF Capacitor, 0402 Pkg.
2.2 μF Capacitor, 1206 Pkg
HMC591LP5 / HMC591LP5E
109001 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 309
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