HMC591 [HITTITE]
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz; 的GaAs PHEMT MMIC 2瓦功率的功放， 6.0 - 10.0 GHz的
| 型号： | HMC591 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz |
| 文件： | 总8页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC591
v01.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Typical Applications
Features
The HMC591 is ideal for use as a power amplifier for:
Saturated Output Power: +34 dBm @ 24% PAE
• Point-to-Point Radios
Output IP3: +43 dBm
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
Gain: 23 dB
DC Supply: +7.0 V @ 1340 mA
50 Ohm Matched Input/Output
2.47 mm x 2.49 mm x 0.1 mm
• Space
Functional Diagram
General Description
The HMC591 is a high dynamic range GaAs PHEMT
MMIC 2 Watt Power Amplifier which operates from 6
to 10 GHz. This amplifier die provides 23 dB of gain
and +34 dBm of saturated power, at 24% PAE from
a +7.0V supply. Output IP3 is +43 dBm typical. The
RF I/Os are DC blocked and matched to 50 Ohms for
ease of integration into Multi-Chip-Modules (MCMs).
All data is taken with the chip in a 50 ohm test fixture
connected via 0.025mm (1 mil) diameter wire bonds
of length 0.31mm (12 mils). For applications which
require optimum OIP3, Idd should be set for 940 mA,
to yield +43 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB.
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Parameter
Min.
Typ.
6 - 10
23
Max.
Min.
Typ.
6.8 - 9
23
Max.
Units
GHz
dB
Frequency Range
Gain
20
20
Gain Variation Over Temperature
Input Return Loss
0.05
12
0.05
14
dB/ °C
dB
Output Return Loss
11
10
dB
Output Power for 1 dB
Compression (P1dB)
30
33
30.5
33.5
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Supply Current (Idd)
33.5
43
34
43
dBm
dBm
mA
1340
1340
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC591
v01.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Broadband Gain & Return Loss
Gain vs. Temperature
30
25
20
15
10
5
34
32
30
28
26
24
22
20
S21
S11
S22
0
-5
-10
-15
-20
-25
18
+25C
+85C
-40C
16
14
12
4
5
6
7
8
9
10
11
12
12
10
6
6.5
7
7.5
8
8.5
9
9.5
10
12
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
-10
-10
-15
-15
+25C
+85C
-40C
+25C
+85C
-40C
-20
-25
-20
-25
4
5
6
7
8
9
10
11
4
5
6
7
8
9
10
11
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
36
35
34
33
32
31
30
29
28
27
26
36
35
34
33
32
31
30
29
28
27
26
+25C
+85C
-55C
+25C
+85C
-55C
6
6.5
7
7.5
8
8.5
9
9.5
6
6.5
7
7.5
8
8.5
9
9.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 223
HMC591
v00.0806
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
P1dB vs. Current
Psat vs. Current
36
35
34
33
32
31
30
29
28
27
26
36
35
34
33
32
31
30
29
28
27
26
940 mA
1140 mA
1340 mA
940 mA
1140 mA
1340 mA
6
6.5
7
7.5
8
8.5
9
9.5
10
10
8
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 940 mA, Pin/Tone = -15 dBm
Power Compression @ 8 GHz,
7V @ 1340 mA
48
46
44
42
40
38
35
Pout
Gain
PAE
30
25
20
15
10
5
36
34
32
30
28
+25C
+85C
-55C
0
6
6.5
7
7.5
8
8.5
9
9.5
-14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16
FREQUENCY (GHz)
INPUT POWER (dBm)
Output IM3, 7V @ 940 mA
Output IM3, 7V @ 1340 mA
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
6 GHz
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
7 GHz
8 GHz
9 GHz
10 GHz
10
10
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
Pin/Tone (dBm)
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 224
HMC591
v00.0806
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Gain & Power vs. Supply Voltage @ 8 GHz
Gain & Power vs. Supply Current @ 8 GHz
38
36
34
32
38
36
34
32
30
28
26
24
22
20
18
30
28
26
24
22
20
18
GAIN
P1dB
Psat
GAIN
P1dB
Psat
6.5
7
7.5
940
1140
Idd SUPPLY CURRENT (mA)
1340
Vdd SUPPLY VOLTAGE (V)
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
Power Dissipation
0
10
9.5
9
-10
-20
+25C
8.5
8
+85C
-40C
-30
-40
-50
-60
-70
-80
7.5
7
6GHz
7GHz
8GHz
9GHz
10GHz
6.5
6
5.5
5
6
6.5
7
7.5
8
8.5
9
9.5
10
-14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12 14
FREQUENCY (GHz)
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Vdd (V)
+6.5
Idd (mA)
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
1355
1340
1325
RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm
+7.0
Channel Temperature
175 °C
+7.5
Continuous Pdiss (T= 85 °C)
(derate 117.6 mW/°C above 85 °C)
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
10.59 W
Thermal Resistance
(channel to die bottom)
8.5 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 225
HMC591
v00.0806
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
Standard
Alternate
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 226
HMC591
v00.0806
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is AC coupled and
matched to 50 Ohms.
1
RFIN
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
3 - 5, 7, 8
Vdd 1-5
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
6
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
9
Vgg
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 227
HMC591
v00.0806
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 228
HMC591
v00.0806
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against > 250V
ESD strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a
tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290
deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 229
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