AIKB20N60CT_技术文档

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

LowꢀLossꢀDuoPack:ꢀIGBTꢀinꢀꢀTRENCHSTOP^TMꢀandꢀFieldstopꢀtechnology

withꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode

ꢀ

C

E

Features:

•ꢀꢀAutomotiveꢀAECꢀQ101ꢀqualified

•ꢀꢀDesignedꢀforꢀDC/ACꢀconvertersꢀforꢀAutomotiveꢀApplication

•ꢀꢀVeryꢀlowꢀꢀV_CE(sat)ꢀ1.5Vꢀ(typ.)

•ꢀꢀMaximumꢀJunctionꢀTemperatureꢀ150°C

•ꢀꢀDynamicallyꢀstressꢀtested

G

•ꢀꢀShortꢀcircuitꢀwithstandꢀtimeꢀ5µs

•ꢀꢀPositiveꢀtemperatureꢀcoefficientꢀinꢀV_CE(sat)

•ꢀꢀLowꢀEMI

•ꢀꢀLowꢀGateꢀCharge

C

•ꢀꢀGreenꢀPackage

•ꢀꢀTRENCHSTOP^TMꢀandꢀFieldstopꢀtechnologyꢀforꢀ600V

ꢀꢀꢀapplicationsꢀoffers:

ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀtightꢀparameterꢀdistribution

ꢀꢀꢀꢀꢀꢀ-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior

ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀhighꢀswitchingꢀspeed

Applications:

G

•ꢀꢀMainꢀinverter

•ꢀꢀClimateꢀcompressor

•ꢀꢀPTCꢀheater

E

•ꢀꢀMotorꢀdrives

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

1.5V 150°C

Marking

Package

PG-TO263-3

AIKB20N60CT

600V

20A

AK20DCT

Datasheet

www.infineon.com

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

Vꢀ2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet

2

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TRENCHSTOP^TMꢀSeries

MaximumꢀRatings

Parameter

Symbol

Value

Unit

Collector-emitterꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_CE

600

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_Cꢀ=ꢀ25°C

T_Cꢀ=ꢀ100°C

I_C

40.0

20.0

A

Pulsedꢀcollectorꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

TurnꢀoffꢀsafeꢀoperatingꢀareaꢀV_CEꢀ≤ꢀ600V,ꢀT_vjꢀ≤ꢀ150°C¹⁾

I_Cpuls

60.0

A

-

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_Cꢀ=ꢀ25°C

T_Cꢀ=ꢀ100°C

I_F

40.0

20.0

A

Diodeꢀpulsedꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Fpuls

V_GE

60.0

±20

A

V

Gate-emitter voltage

Short circuit withstand time

V_GEꢀ=ꢀ15.0V,ꢀV_CCꢀ≤ꢀ400V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

T_vjꢀ=ꢀ150°C

t_SC

µs

5

PowerꢀdissipationꢀT_Cꢀ=ꢀ25°C

Operating junction temperature

Storage temperature

P_tot

T_vj

156.0

W

°C

-40...+150

T_stg

Soldering temperature,

reflow soldering (MSL1 according to JEDEC J-STA-020)

°C

260

ThermalꢀResistance

Value

min. typ. max.

Parameter

Symbol Conditions

Unit

R_thꢀCharacteristics

IGBT thermal resistance,

junction - case

R_th(j-c)

R_th(j-a)

-

0.90 K/W

1.50 K/W

65 K/W

Diode thermal resistance,

junction - case

Thermal resistance, min. footprint

junction - ambient

Thermal resistance, 6cm² Cu on

PCB

R_th(j-a)

-

40 K/W

junction - ambient

¹⁾t_p≤1µs

Datasheet

3

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AIKB20N60CT

TRENCHSTOP^TMꢀSeries

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

Collector-emitter breakdown voltage V_(BR)CESV_GEꢀ=ꢀ0V,ꢀI_Cꢀ=ꢀ0.20mA

V_GEꢀ=ꢀ15.0V,ꢀI_Cꢀ=ꢀ20.0A

600

-

V

Collector-emitter saturation voltage V_CEsat

T_vjꢀ=ꢀ25°C

-

1.50 2.05

1.85

T_vjꢀ=ꢀ150°C

-

V_GEꢀ=ꢀ0V,ꢀI_Fꢀ=ꢀ20.0A

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ150°C

Diode forward voltage

V_F

-

1.65 2.05

V

1.65

-

Gate-emitter threshold voltage

V_GE(th)

I_Cꢀ=ꢀ0.29mA,ꢀV_CEꢀ=ꢀV_GE

4.1

4.9

5.7

V_CEꢀ=ꢀ600V,ꢀV_GEꢀ=ꢀ0V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ150°C

Zero gate voltage collector current I_CES

-

40

-

µA

550

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CEꢀ=ꢀ0V,ꢀV_GEꢀ=ꢀ20V

V_CEꢀ=ꢀ20V,ꢀI_Cꢀ=ꢀ20.0A

-

100

-

nA

S

11.0

none

Integrated gate resistor

r_G

Ω

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DynamicꢀCharacteristic

Input capacitance

C_ies

-

1100

71

-

Output capacitance

C_oes

C_res

V_CEꢀ=ꢀ25V,ꢀV_GEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz

pF

Reverse transfer capacitance

32

V_CCꢀ=ꢀ480V,ꢀI_Cꢀ=ꢀ20.0A,

V_GEꢀ=ꢀ15V

Gate charge

Q_G

L_E

-

120.0

7.0

-

nC

nH

Internal emitter inductance

measured 5mm (0.197 in.) from

case

Short circuit collector current

Max. 1000 short circuits

Time between short circuits: ≥ 1.0s

V_GEꢀ=ꢀ15.0V,ꢀV_CCꢀ≤ꢀ400V,

t_SCꢀ≤ꢀ5µs

T_vjꢀ=ꢀ150°C

I_C(SC)

-

A

183

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

18

14

-

ns

T_vjꢀ=ꢀ25°C,

V_CCꢀ=ꢀ600V,ꢀI_Cꢀ=ꢀ20.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ12.0Ω,ꢀR_G(off)ꢀ=ꢀ12.0Ω,

Lσꢀ=ꢀ131nH,ꢀCσꢀ=ꢀ31pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

199

42

ns

Turn-on energy

E_on

E_off

E_ts

0.31

0.46

0.77

mJ

Turn-off energy

Total switching energy

Datasheet

4

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AIKB20N60CT

TRENCHSTOP^TMꢀSeries

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

41

-

ns

µC

A

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ600V,

I_Fꢀ=ꢀ20.0A,

Q_rr

0.31

13.3

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ880A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

711

-

A/µs

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ150°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

18

17

-

ns

T_vjꢀ=ꢀ150°C,

V_CCꢀ=ꢀ600V,ꢀI_Cꢀ=ꢀ20.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ12.0Ω,ꢀR_G(off)ꢀ=ꢀ12.0Ω,

Lσꢀ=ꢀ131nH,ꢀCσꢀ=ꢀ31pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

217

70

ns

Turn-on energy

E_on

E_off

E_ts

0.47

0.60

1.07

mJ

Turn-off energy

Total switching energy

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ150°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

201

1.28

16.6

-

ns

µC

A

T_vjꢀ=ꢀ150°C,

V_Rꢀ=ꢀ600V,

I_Fꢀ=ꢀ20.0A,

Q_rr

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ800A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

481

-

A/µs

Datasheet

5

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2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

140

120

100

80

30

25

20

15

10

5

60

40

20

0

25

50

75

100

125

150

25

50

75

100

125

150

T_C,ꢀCASEꢀTEMPERATUREꢀ[°C]

Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase

Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase

temperature

(T_j≤150°C)

(V_GE≥15V,ꢀT_j≤150°C)

60

V_GE=20V

17V

50

15V

13V

11V

40

9V

7V

30

20

10

0

20

10

0

1

2

3

4

0

1

2

3

4

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 3. Typicalꢀoutputꢀcharacteristic

(T_j=25°C)

Figure 4. Typicalꢀoutputꢀcharacteristic

(T_j=150°C)

Datasheet

6

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2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

40

3.0

2.5

2.0

1.5

1.0

0.5

0.0

25°C

T_j=150°C

I_C=10A

I_C=20A

I_C=40A

35

30

25

20

15

10

5

0

2

4

6

8

10

0

50

100

150

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 5. Typicalꢀtransferꢀcharacteristic

(V_CE=10V)

Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas

aꢀfunctionꢀofꢀjunctionꢀtemperature

(V_GE=15V)

1000

100

10

1000

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

t_d(on)

t_r

100

1

10

0

5

10

15

20

25

30

35

40

0

10

20

30

40

50

60

70

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

collectorꢀcurrent

Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate

resistor

(inductiveꢀload,ꢀT_j=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀR_G=12Ω,Dynamicꢀtestꢀcircuitꢀin

Figure E)

(inductiveꢀload,ꢀT_j=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀI_C=20A,Dynamicꢀtestꢀcircuitꢀin

Figure E)

Datasheet

7

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2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

1000

7

6

5

4

3

2

1

0

t_d(off)

t_f

t_d(on)

t_r

typ.

100

10

25

50

75

100

125

150

-50

0

50

100

150

T_G,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

junctionꢀtemperature

Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction

ofꢀjunctionꢀtemperature

(inductiveꢀload,ꢀV_CE=400V,ꢀV_GE=15/0V,

I_C=20A,ꢀR_G=12Ω,Dynamicꢀtestꢀcircuitꢀin

Figure E)

(I_C=0.29mA)

2.4

2.0

E_off

E_on*

E_ts*

E_on*

E_ts*

1.6

1.2

0.8

0.4

0.0

1.6

1.2

0.8

0.4

0.0

0

5

10

15

20

25

30

35

40

0

10

20

30

40

50

60

70

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀcurrent

Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀgateꢀresistor

(inductiveꢀload,ꢀT_j=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀR_G=12Ω,Dynamicꢀtestꢀcircuitꢀin

(inductiveꢀload,ꢀT_j=150°C,ꢀV_CE=400V,

V_GE=15/0V,ꢀI_C=20A,Dynamicꢀtestꢀcircuitꢀin

Figure E)

Datasheet

8

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AIKB20N60CT

TRENCHSTOP^TMꢀSeries

1.2

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.0

E_off

E_on*

E_ts*

E_off

E_on*

E_ts*

0.8

0.6

0.4

0.2

0.0

25

50

75

100

125

150

300

350

400

450

500

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀjunctionꢀtemperature

(inductiveꢀload,ꢀV_CE=400V,ꢀV_GE=15/0V,

I_C=20A,ꢀR_G=12Ω,Dynamicꢀtestꢀcircuitꢀin

Figure E)

Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀemitterꢀvoltage

(inductiveꢀload,ꢀT_j=150°C,ꢀV_GE=15/0V,

I_C=20A,ꢀR_G=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin

Figure E)

20

120V

480V

C_iss

C_oss

C_rss

1000

100

10

15

10

5

0

25

50

75

100

125

150

0

10

20

30

40

50

Q_GE,ꢀGATEꢀCHARGEꢀ[nC]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 15. Typicalꢀgateꢀcharge

(I_C=20A)

Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof

collector-emitterꢀvoltage

(V_GE=0V,ꢀf=1MHz)

Datasheet

9

Vꢀ2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

350

300

250

200

150

100

50

12

10

8

6

4

2

0

12

14

16

18

20

10

11

12

13

14

15

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa

functionꢀofꢀgate-emitterꢀvoltage

Figure 18. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof

gate-emitterꢀvoltage

(V_CE≤400V,ꢀT_j≤150°C)

(V_CE=400V,ꢀstartꢀatꢀT_j=25°C,ꢀT_jmax≤150°C)

1

0.1

D=0.5

0.2

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

0.01

i:

1

2

3

4

i:

r_i[K/W]: 0.33997 0.44456 0.58146

τ_i[s]: 1.3E-4 1.5E-3

1

2

3

4

r_i[K/W]: 0.07041 0.30709 0.3199

τ_i[s]:

0.18715

0.13483

9.6E-5

6.8E-4

0.0108462 0.0692548

0.0182142 0.0920745

0.001

1E-6

0.001

1E-5

1E-4

0.001

0.01

0.1

1

1E-7 1E-6 1E-5 1E-4 0.001 0.01

0.1

1

t_p,ꢀPULSEꢀWIDTHꢀ[s]

Figure 19. IGBTꢀtransientꢀthermalꢀresistanceꢀasꢀa

Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa

functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty

cyclesꢀD

(D=t_p/T)

cyclesꢀD

(D=t_p/T)

Datasheet

10

Vꢀ2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

300

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

T_j=25°C, IF = 20A

T_j=150°C, IF = 20A

T_j=25°C, IF = 20A

T_j=150°C, IF = 20A

250

200

150

100

50

0

600

900

1200

1500

600

900

1200

1500

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 21. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 22. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa

ofꢀdiodeꢀcurrentꢀslope

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)

25

20

15

10

5

0

-150

-300

-450

-600

-750

-900

T_j=25°C, IF = 20A

T_j=150°C, IF = 20A

T_j=25°C, IF = 20A

T_j=150°C, IF = 20A

0

600

900

1200

1500

600

900

1200

1500

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 23. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa

Figure 24. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode

currentꢀslope

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)

Datasheet

11

Vꢀ2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

60

2.5

2.0

1.5

1.0

0.5

0.0

T_j=25°C

T_j=150°C

I_C=10A

I_C=20A

I_C=40A

50

40

30

20

10

0

0.0

0.5

1.0

1.5

2.0

2.5

0

50

100

150

V_F,ꢀFORWARDꢀVOLTAGEꢀ[V]

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 25. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 26. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction

ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature

Datasheet

12

Vꢀ2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

Package Drawing PG-TO263-3

MIN

4.30

0.00

0.65

0.95

0.33

1.17

8.51

7.10

9.80

6.50

MAX

4.57

0.25

0.85

1.15

0.65

1.40

9.45

7.90

10.31

8.60

MIN

MAX

0.180

0.010

0.033

0.045

0.026

0.055

0.372

0.311

0.406

0.339

0.169

0.000

0.026

0.037

0.013

0.046

0.335

0.280

0.386

0.256

Z8B00003324

0

5

0

2.54

5.08

2

0.100

0.200

2

7.5mm

14.61

2.29

0.70

1.00

16.05

9.30

4.50

10.70

3.65

1.25

15.88

3.00

1.60

1.78

16.25

9.50

4.70

10.90

3.85

1.45

0.575

0.090

0.028

0.039

0.632

0.366

0.177

0.421

0.144

0.049

0.625

0.118

0.063

0.070

0.640

0.374

0.185

0.429

0.152

0.057

30-08-2007

01

Datasheet

13

Vꢀ2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

Testing Conditions

V_GE(t)

I,V

90% V_GE

t_rr= t_a+ t_b

dI_F/dt

Q_rr= Q_a+ Q_b

a

b

10% V_GE

t

Q_a

Q_b

I_C(t)

dI

90% I_C

10% I_C

Figure C. Definition of diode switching

characteristics

t

V_CE(t)

t

t_d(off)

t_f

t_d(on)

t_r

Figure A.

V_GE(t)

90% V_GE

Figure D.

10% V_GE

t

I_C(t)

CC

2% I_C

t

V_CE(t)

Figure E. Dynamic test circuit

Parasitic inductance L ,

parasitic capacitor C ,

s

relief capacitor C ,

(only for ZVT switching)

r

t₂

t₄

E

=

V_CEx I_Cx dt

E

=

V_CEx I_Cx dt

off

on

2% V_CE

t₁

t₃

t

t₁

t₂

t₃

t₄

Figure B.

Datasheet

14

Vꢀ2.1

2017-02-09

AIKB20N60CT

TRENCHSTOP^TMꢀSeries

RevisionꢀHistory

AIKB20N60CT

Revision:ꢀ2017-02-09,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.1

2017-02-09 Data sheet created

Datasheet

15

Vꢀ2.1

2017-02-09

TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG

µHVIC™,ꢀµIPM™,ꢀµPFC™,ꢀAU-ConvertIR™,ꢀAURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀCoolDP™,

CoolGaN™,ꢀCOOLiR™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀDAVE™,ꢀDI-POL™,ꢀDirectFET™,ꢀDrBlade™,ꢀEasyPIM™,

EconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀGaNpowIR™,

HEXFET™,ꢀHITFET™,ꢀHybridPACK™,ꢀiMOTION™,ꢀIRAM™,ꢀISOFACE™,ꢀIsoPACK™,ꢀLEDrivIR™,ꢀLITIX™,ꢀMIPAQ™,

ModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPowIRaudio™,ꢀPowIRStage™,ꢀPrimePACK™,

PrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀSmartLEWIS™,ꢀSOLIDꢀFLASH™,ꢀSPOC™,

StrongIRFET™,ꢀSupIRBuck™,ꢀTEMPFET™,ꢀTRENCHSTOP™,ꢀTriCore™,ꢀUHVIC™,ꢀXHP™,ꢀXMC™

ꢀ

TrademarksꢀupdatedꢀNovemberꢀ2015

ꢀ

OtherꢀTrademarks

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.

ꢀ

Publishedꢀby

InfineonꢀTechnologiesꢀAG

81726ꢀMünchen,ꢀGermany

AllꢀRightsꢀReserved.

ImportantꢀNotice

Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics

(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany

informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand

liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird

party.

Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis

documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof

theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.

Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof

customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe

completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.

Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest

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Warnings

Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion

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型号：	AIKB20N60CT
厂家：	Infineon
描述：	IGBT TRENCHSTOP™ 双极性晶体管
文件：	总16页 (文件大小：2000K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AIKB20N60CT [INFINEON]

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