AUIRFR1018ETRR_技术文档

PD - 97685

AUTOMOTIVE GRADE

AUIRFR1018E

HEXFET^®Power MOSFET

Features

D

S

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

60V

7.1m

8.4m

79A

●

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

G

56A

D

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtemperature,fastswitching

speed and improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

S

G

D-Pak

AUIRFR1018E

applications.

G

D

S

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

79

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

56

A

56

315

P_D@T_C= 25°C

W

110

Maximum Power Dissipation

0.76

Linear Derating Factor

W/°C

V

V_GS

E_AS

I_AR

± 20

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

88

mJ

A

Avalanche Current

47

Repetitive Avalanche Energy

E_AR

mJ

11

21

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.32

50

Units

R_θ

Junction-to-Case

JC

R_θJA

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

R_θJA

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

1

06/17/11

AUIRFR1018E

Static Electrical @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Min. Typ. Max. Units

60 ––– –––

––– 0.073 ––– V/°C Reference to 25°C, I_D= 5mA

Conditions

V_GS= 0V, I_D= 250μA

V

/ T

_(BR)DSSΔ

Δ

J

R_DS(on)

V_GS(th)

gfs

–––

2.0

7.1

8.4

4.0

V_GS= 10V, I_D= 47A

V_DS= V_GS, I_D= 100μA

V_DS= 50V, I_D= 47A

m

V

Ω

–––

Forward Transconductance

110 ––– –––

–––

––– –––

––– ––– 250

––– ––– 100

––– ––– -100

S

R_G(int)

I_DSS

Internal Gate Resistance

Drain-to-Source Leakage Current

0.73 –––

20

Ω

μA

V

_DS= 60V, V_GS= 0V

_DS= 48V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA V_GS= 20V

V_GS= -20V

Dynamic Electrical @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Total Gate Charge

Min. Typ. Max. Units

Conditions

Q_g

–––

46

10

12

34

13

35

55

46

69

nC I_D= 47A

_DS= 30V

V_GS= 10V

I_D= 47A, V_DS=0V, V_GS= 10V

ns V_DD= 39V

I_D= 47A

R = 10

Q_gs

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

Rise Time

–––

V

Q_gd

Q_sync

t_d(on)

t_r

t_d(off)

Turn-Off Delay Time

Fall Time

Ω

G

t_f

V_GS= 10V

C_iss

Input Capacitance

––– 2290 –––

––– 270 –––

––– 130 –––

––– 390 –––

––– 630 –––

V_GS= 0V

C_oss

C_rss

Output Capacitance

Reverse Transfer Capacitance

V

_DS= 50V

pF ƒ = 1.0MHz

C_osseff. (ER)

C_osseff. (TR)

V

_GS= 0V, V_DS= 0V to 60V

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

V_GS= 0V, V_DS= 0V to 60V

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

D

S

I_S

Continuous Source Current

––– –––

A

MOSFET symbol

79

(Body Diode)

Pulsed Source Current

(Body Diode)

showing the

integral reverse

G

I_SM

––– ––– 315

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

––– –––

1.3

39

V

T_J= 25°C, I_S= 47A, V_GS= 0V

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 51V,

–––

26

31

24

35

1.8

ns

I_F= 47A

di/dt = 100A/μs

47

Q_rr

Reverse Recovery Charge

36

nC

A

53

I_RRM

t_on

Reverse Recovery Current

Forward Turn-On Time

–––

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.

C_osseff. (TR) is a fixed capacitance that gives the same charging time

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 56A. Note that current

limitations arising from heating of the device leads may occur with

as C_osswhile V_DSis rising from 0 to 80% V_DSS

C_osseff. (ER) is a fixed capacitance that gives the same energy as

C_osswhile V_DSis rising from 0 to 80% V_DSS

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

R_θis measured at T_Japproximately 90°C.

.

some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

.

Limited by T_Jmax, starting T_J= 25°C, L = 0.08mH

R_G= 25Ω, I_AS= 47A, V_GS=10V. Part not recommended for

use above this value.

I_SD≤ 47A, di/dt ≤ 1668A/μs, V_DD≤ V_(BR)DSS, T_J≤ 175°C.

2

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AUIRFR1018E

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification.

IR’s Industrial and Consumer qualification level is granted by

extension of the higher Automotive level.

Moisture Sensitivity Level

D-PAK

MSL1

Class M4 (+/- 600V)^†††

Machine Model

AEC-Q101-002

Class H1C (+/- 1500V)^†††

AEC-Q101-001

Human Body Model

ESD

Class C4 (+/- 1000V)^†††

AEC-Q101-005

Charged Device

Model

RoHS Compliant

Yes

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

Highest passing voltage.

www.irf.com

3

AUIRFR1018E

1000

100

10

VGS

15V

VGS

15V

TOP

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

100

10

BOTTOM

4.5V

≤60μs PULSE WIDTH

Tj = 25°C

60μs PULSE WIDTH

≤

Tj = 175°C

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

10

2.5

2.0

1.5

1.0

0.5

I

= 47A

D

V

= 10V

GS

T

= 175°C

J

T

= 25°C

V

J

1

= 25V

DS

≤60μs PULSE WIDTH

0.1

2

3

4

5

6

7

8

9

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

4000

3000

2000

1000

0

V

C

= 0V,

f = 1 MHZ

GS

16

= C + C , C SHORTED

I = 47A

D

iss

gs

gd ds

C

= C

rss

gd

V

= 48V

= 30V

= 12V

DS

C

= C + C

oss

ds

gd

12

8

C

iss

4

C

oss

C

rss

0

1

10

100

0

10

20

30

40

50

60

V

, Drain-to-Source Voltage (V)

Q

Total Gate Charge (nC)

DS

G

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

4

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AUIRFR1018E

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

T

= 175°C

J

1msec

100μsec

T

= 25°C

J

LIMITED BY PACKAGE

10msec

1

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

DC

10

GS

0.1

1

100

0.0

0.5

1.0

1.5

2.0

V

, Drain-toSource Voltage (V)

V

, Source-to-Drain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

80

LIMITED BY PACKAGE

Id = 5mA

60

40

20

0

75

70

65

60

25

50

75

100

125

150

175

-60 -40 -20 0 20 40 60 80 100120140160180

T , Case Temperature (°C)

C

T

, Temperature ( °C )

J

Fig 10. Drain-to-Source Breakdown Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

0.8

400

I

D

350

300

250

200

150

100

50

TOP

5.3A

11A

47A

0.6

0.4

0.2

0.0

BOTTOM

0

10

V

20

30

40

50

60

25

50

75

100

125

150

175

Drain-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

DS,

J

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

Fig 11. Typical C_OSSStored Energy

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5

AUIRFR1018E

10

1

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

R₄

τι

(sec)

Ri (°C/W)

0.1

0.01

τ_J

0.026741 0.000007

0.28078 0.000091

0.606685 0.000843

0.406128 0.005884

τ_C

τ_J

τ₁

τ

³τ₃

τ₄

²τ₂

0.02

0.01

τ₁

τ₄

Ci= τi/Ri

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

10

1

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Δ

Tstart =25°C (Single Pulse)

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

100

80

60

40

20

0

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

TOP

BOTTOM 10% Duty Cycle

= 47A

Single Pulse

I

D

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

25

50

75

100

125

150

175

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Starting T , Junction Temperature (°C)

J

Fig 15. Maximum Avalanche Energy vs. Temperature

6

www.irf.com

AUIRFR1018E

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

14

12

10

8

I

= 1.0A

D

I

= 32A

= 51V

F

= 1.0mA

= 250μA

= 100μA

V

R

T = 25°C

J

T = 125°C

J

6

4

2

0

-75 -50 -25

0

J

25 50 75 100 125 150 175

, Temperature ( °C )

0

200

400

600

800

1000

T

di /dt (A/μs)

F

Fig. 17 - Typical Recovery Current vs. di_f/dt

Fig 16. Threshold Voltage vs. Temperature

14

12

10

8

320

280

240

200

160

120

80

I

= 47A

= 51V

I

= 32A

V = 51V

R

F

V

R

T = 25°C

J

T = 125°C

J

T = 125°C

J

6

4

2

40

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 18 - Typical Recovery Current vs. di_f/dt

Fig. 19 - Typical Stored Charge vs. di_f/dt

320

I

= 47A

= 51V

F

280

240

200

160

120

80

V

R

T = 25°C

J

T = 125°C

J

40

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 20 - Typical Stored Charge vs. di_f/dt

www.irf.com

7

AUIRFR1018E

Driver Gate Drive

P.W.

Period

D =

D.U.T

+

***

V

=10V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

*

V_DD

**

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** V_GS= 5V for Logic Level Devices

Fig 21. Diode Reverse Recovery Test Circuit for HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

2V0_GV_S

Ω

0.01

t

p

I

AS

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

R_D

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

-

10%

V_GS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

t_d(on)

t_d(off)

t_r

t_f

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Id

Vds

Vgs

L

VCC

DUT

0

Vgs(th)

20K

1K

Qgs1

Qgs2

Qgodr

Qgd

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

8

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AUIRFR1018E

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

Part Number

AUFR1018E

Date Code

Y= Year

WW= Work Week

A= Automotive, LeadFree

IR Logo

YWWA

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

9

AUIRFR1018E

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

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AUIRFR1018E

Ordering Information

Base part number Package Type

Standard Pack

Form

Complete Part Number

Quantity

75

2000

3000

AUIRFR1018E

Dpak

Tube

AUIRFR1018E

AUIRFR1018ETR

AUIRFR1018ETRL

AUIRFR1018ETRR

Tape and Reel

Tape and Reel Left

Tape and Reel Right

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11

AUIRFR1018E

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make

corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or

services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards

to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order

acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing

and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government

requirements, testing of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR

components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all

associatedwarranties, conditions, limitations, andnotices. Reproductionofthisinformationwithalterationsisanunfairanddeceptivebusinesspractice.

IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and

any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any

such statements.

IRproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orinotherapplications

intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or

death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold

International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses,

and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized

use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured

to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR

products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are

solely responsible for compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR

as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use

any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

12

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型号：	AUIRFR1018ETRR
厂家：	Infineon
描述：	Advanced Process Technology Ultra Low On-Resistance
文件：	总12页 (文件大小：239K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFR1018ETRR [INFINEON]

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