AUIRFS4610STRL [INFINEON]
AUTOMOTIVE GRADE; 汽车级
| 型号： | AUIRFS4610STRL |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE GRADE |
| 文件： | 总13页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96325
AUTOMOTIVE GRADE
AUIRFB4610
AUIRFS4610
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
D
S
V(BR)DSS
RDS(on) typ.
max.
100V
11m
14m
73A
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
ID
D
Description
D
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
S
S
D
D
G
G
D2Pak
AUIRFS4610
TO-220AB
AUIRFB4610
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
73
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
52
A
290
PD @TC = 25°C
190
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
1.3
VGS
EAS
IAR
± 20
370
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
mJ
A
See Fig. 14, 15, 16a, 16b,
EAR
dV/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
7.6
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.77
–––
62
Units
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D2Pak
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRF/B/S4610
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
100 ––– –––
––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
V
–––
2.0
73
11
14
VGS = 10V, ID = 44A
VDS = VGS, ID = 100µA
VDS = 50V, ID = 44A
f = 1MHz, open drain
mΩ
V
–––
4.0
Forward Transconductance
––– –––
S
RG
Gate Input Resistance
–––
1.5
–––
20
Ω
IDSS
Drain-to-Source Leakage Current
––– –––
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
V
µA
nA
––– ––– 250
––– ––– 200
––– ––– -200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
90
20
36
18
87
53
70
140
–––
–––
–––
–––
–––
–––
ID = 44A
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS = 80V
nC
Qgd
VGS = 10V
td(on)
VDD = 65V
ID = 44A
tr
Rise Time
ns
td(off)
Turn-Off Delay Time
RG = 5.6Ω
VGS = 10V
VGS = 0V
tf
Fall Time
Ciss
Input Capacitance
––– 3550 –––
––– 260 –––
––– 150 –––
––– 330 –––
––– 380 –––
Coss
Output Capacitance
VDS = 50V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
oss eff. (TR)
Effective Output Capacitance (Time Related)
ƒ = 1.0MHz, See Fig. 5
pF
Coss eff. (ER)
V
GS = 0V, VDS = 0V to 80V , See Fig.11
GS = 0V, VDS = 0V to 80V
C
V
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
––– –––
73
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 290
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
53
V
TJ = 25°C, IS = 44A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 85V,
–––
–––
–––
–––
–––
35
42
44
65
2.1
ns
IF = 44A
di/dt = 100A/µs
63
Qrr
Reverse Recovery Charge
66
nC
A
98
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.39mH
RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use
above this value.
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
.
.
ISD ≤ 44A, di/dt ≤ 660A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
2
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AUIRF/B/S4610
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This part number(s) passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220AB
D2 PAK
N/A
Moisture Sensitivity Level
MSL1
Machine Model
Class M4(400V)
(per AEC-Q101-002)
Class H1C(2000V)
(per AEC-Q101-001)
Class C3 (750V)
(per AEC-Q101-005)
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF/B/S4610
1000
1000
100
10
VGS
VGS
15V
TOP
15V
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
1
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
Tj = 25°C
≤
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
1.0
3.0
2.5
2.0
1.5
1.0
0.5
I
= 73A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 25V
J
V
DS
≤ 60µs PULSE WIDTH
0.1
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
6000
5000
4000
3000
2000
1000
0
20
V
C
= 0V,
f = 1 MHZ
GS
I = 44A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
DS
C
= C
rss
gd
16
12
8
VDS= 50V
VDS= 20V
C
= C + C
oss
ds
gd
Ciss
4
Coss
Crss
0
0
20
40
60
80
100 120 140
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRF/B/S4610
1000.0
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 175°C
J
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
DC
0.1
0.1
1
10
100
1000
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
80
60
40
20
0
125
120
115
110
105
100
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Junction Temperature (°C)
T
, Junction Temperature (°C)
J
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
1600
2.0
1.5
1.0
0.5
0.0
I
D
TOP
4.6A
6.3A
44A
1200
800
400
0
BOTTOM
25
50
75
100
125
150
175
0
20
40
60
80
100
Starting T , Junction Temperature (°C)
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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5
AUIRF/B/S4610
1
D = 0.50
0.20
0.10
0.1
0.01
0.05
0.02
0.01
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.4367 0.001016
τ
J τJ
τ
Cτ
τ
τ
1τ1
Ci= τi/Ri
2τ2
0.3337 0.009383
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
∆
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1% Duty Cycle
= 44A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Starting T , Junction Temperature (°C)
J
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRF/B/S4610
16
12
8
5.0
4.0
3.0
2.0
1.0
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
ID = 100µA
I
= 29A
F
4
V
= 85V
R
T
= 125°C
= 25°C
J
J
T
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
di / dt - (A / µs)
f
T
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
16
300
12
8
200
100
I
= 29A
= 85V
I
= 44A
= 85V
F
F
4
0
V
V
R
R
T
= 125°C
= 25°C
T
= 125°C
= 25°C
J
J
T
T
J
J
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
di / dt - (A / µs)
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
300
200
100
0
I
= 44A
= 85V
F
V
T
R
= 125°C
= 25°C
J
T
J
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
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7
AUIRF/B/S4610
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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AUIRF/B/S4610
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB4610
Date Code
Y= Year
WW= Work Week
IR Logo
YWWA
A= Automotive, Lead Free
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRF/B/S4610
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRFS4610
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF/B/S4610
D2Pak (TO-263AB) Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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11
AUIRF/B/S4610
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRFB4610
AUIRFS4610
TO-220
D2Pak
Tube
AUIRFB4610
AUIRFS4610
Tube
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS4610STRL
AUIRFS4610STRR
12
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AUIRF/B/S4610
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righttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsandservicesatanytime
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithIR’sstandard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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