BGA125N6_技术文档

BGA125N6

Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications

Features

• Operation frequencies: 1164 to 1300 MHz

• Ultra low current consumption: 1.3 mA

• Wide supply voltage range: 1.1 V to 2.8 V

• High insertion power gain: 20.0 dB

• Low noise ﬁgure: 0.80 dB

• 2 kV HBM ESD protection (inluding AI pin)

0.7x1.1mm²

• Ultra small and RoHS/WEEE compliant package

Potential Application

The BGA125N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially in wearables and mobile

cellular IoT applications. With the very good performance it ensures high system sensitivity. The ultra low power

consumption of 1.5mW preserves valuable battery power, ideal for small battery powered GNSS devices. The wide

supply voltage range from 1.1 V to 2.8 V ensure ﬂexible design and high compatibility. Besides GPS L2 and L5, the

GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2, Beidou B3, B2 and IRNSS/NAVIC bands.

Product Validation

Qualiﬁed for industrial applications according to the relevant tests of JEDEC47/20/22.

Block diagram

VCC PON

AI

AO

ESD

GND

Datasheet

www.inﬁneon.com

Please read the Important Notice and Warnings at the end of this document

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Table of Contents

1

2

3

4

7

9

1

2

3

4

5

Features

Maximum Ratings

Electrical Characteristics

Application Information

Package Information

Datasheet

1

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Features

1 Features

• Operation frequencies: 1164 to 1300 MHz

• Ultra low current consumption: 1.3 mA

• Wide supply voltage range: 1.1 V to 2.8 V

• High insertion power gain: 20.0 dB

• Low noise ﬁgure: 0.80 dB

• 2 kV HBM ESD protection (inluding AI pin)

• Only one external matching component needed

• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm²)

• RoHS/WEEE compliant package

Description

The BGA125N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially in wearables and mobile cellular IoT

applications. With the very good performance it ensures high system sensitivity. The ultra low power consumption of 1.5mW

preserves valuable battery power, ideal for small battery powered GNSS devices. The wide supply voltage range from 1.1 V to

2.8 V ensure ﬂexible design and high compatibility. Besides GPS L2 and L5, the GNSS LNA also covers Galileo E5a, E5b, E6,

Glonass G3, G2, Beidou B3, B2 and IRNSS/NAVIC bands. The BGA125N6 LNA is manufactured in Inﬁneon’s patented bipolar

technology.

The device has a very small size of only 0.7 x 1.1 mm²and a maximum height of 0.375 mm.

The device conﬁguration is shown in Fig. 1.

VCC PON

AI

AO

ESD

GND

Figure 1: BGA125N6 Block diagram

Product Name

Marking

Package

BGA125N6

7

PG-TSNP-6-2

Datasheet

2

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Maximum Ratings

2 Maximum Ratings

Table 1: Maximum Ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

-0.3

–

Typ.

Max.

2.8

0.9

1

Voltage at pin VCC

Voltage at pin AI

V_CC

V_AI

V_AO

V_PON

V_GND

I_CC

–

V

mA

dBm

–

Voltage at pin AO

Voltage at pin PON

Voltage at pin GND

Current into pin VCC

RF input power

V

_CC+ 0.3

2.8

0.3

9

–

P_IN

–

+25

CW signal, VSWR 10:1, tested

at device level, VCC/VPON typ,

25°C, for 30s and all modes ²

Total power dissipation

Junction temperature

Ambient temperature range

Storage temperature range

ESD capability, HBM

P_tot

T_J

T_A

T_STG

V_{ESD_HBM}

–

60

150

85

150

+2000

mW

°C

V

–

-40

-55

-2000

–

3

¹All voltages refer to GND-Nodes unless otherwise noted

²RF input power higher than +10dBm exceeding operating range

³Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF)

Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are

absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure

to conditions at or below absolute maximum rating but above the speciﬁed maximum operation conditions may aﬀect

device reliability and life time. Functionality of the device might not be given under these conditions.

Datasheet

3

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Electrical Characteristics

3 Electrical Characteristics

Table 3: Electrical Characteristics at T_A= 25 °C, V_CC= 1.2 V, f = 1164– 1300 MHz

Parameter¹

Symbol

Values

Typ.

1.2

1.3

0.2

–

1.5

–

Unit

Note / Test Condition

Min.

1.1

–

Max.

2.8

1.65

3

2.8

0.4

3

Supply Voltage

Supply Current

V_CC

I_CC

V

–

mA

µA

V

ON-Mode

OFF-Mode

ON-Mode

OFF-Mode

ON-Mode

OFF-Mode

ON-Mode

–

0.8

0.0

–

17.6

Power on Voltage

Power on Current

V_PON

I_PON

V

µA

dB

1

21.6

2

Insertion Power Gain

f = 1176 MHz

Noise Figure²

|S₂₁|

19.6

NF

–

0.85

11

1.25

dB

ON-Mode

f = 1176 MHz Z_S= 50Ω

Input return loss³

f = 1176 MHz

RL_IN

RL_OUT

8.5

10

25

–

Output return loss³

f = 1176 MHz

15

Reverse isolation³

f = 1176 MHz

1/|S₂₁|

40

2

Power up settling time^{4 5}

t_S

–

-21

9

-17

12

–

µs

dBm

OFF- to ON-Mode

ON-Mode

Inband input 1dB-compression IP_1dB

point³

f = 1176 MHz

Inbandinput3rd-orderintercept IIP₃

point^{3 6}

-20

-3

-15

2

–

dBm

ON-Mode

Out of band input 3rd-order in- IIP_3OOB

tercept point^{5 7}

ON-Mode

Stability⁵

k

>1

–

f=20 MHz–10 GHz

¹Based on application described in chapter 4

²PCB losses are substrated

³Veriﬁcation based on AQL; not 100% tested in production

⁴LNA gain changed to 90% of ﬁnal gain value (in dB)

⁵Guaranteed by device design; not tested in production

⁶Inband @ 1176 MHz, Input power = -30 dBm for each tone, 1 MHz tone distance

⁷f1 = 1785 MHz, f2 = 2401 MHz, Input power = -20 dBm for each tone

Datasheet

4

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Electrical Characteristics

Table 4: Electrical Characteristics at T_A= 25 °C, V_CC= 1.8 V, f = 1164– 1300 MHz

Parameter¹

Symbol

Values

Typ.

1.8

1.35

0.2

–

3

–

20.0

Unit

Note / Test Condition

Min.

1.1

–

Max.

2.8

1.7

3

2.8

0.4

6

Supply Voltage

Supply Current

V_CC

I_CC

V

–

mA

µA

V

ON-Mode

OFF-Mode

ON-Mode

OFF-Mode

ON-Mode

OFF-Mode

ON-Mode

–

0.8

0.0

–

18.0

Power on Voltage

Power on Current

V_PON

V

µA

dB

I_PON

1

22.0

2

Insertion Power Gain

f = 1176 MHz

Noise Figure²

|S₂₁|

NF

–

0.80

11

1.20

dB

ON-Mode

f = 1176 MHz Z_S= 50Ω

Input return loss³

f = 1176 MHz

RL_IN

RL_OUT

8.5

10

25

–

Output return loss³

f = 1176 MHz

14

Reverse isolation³

f = 1176 MHz

1/|S₂₁|

40

2

Power up settling time^{4 5}

t_S

–

-19

8

-15

11

–

µs

dBm

OFF- to ON-Mode

ON-Mode

Inband input 1dB-compression IP_1dB

point³

f = 1176 MHz

Inbandinput3rd-orderintercept IIP₃

point^{3 6}

-20

-3

-15

2

–

dBm

ON-Mode

Out of band input 3rd-order in- IIP_3OOB

tercept point^{5 7}

ON-Mode

Stability⁵

k

>1

–

f=20 MHz–10 GHz

¹Based on application described in chapter 4

²PCB losses are substrated

³Veriﬁcation based on AQL; not 100% tested in production

⁴LNA gain changed to 90% of ﬁnal gain value (in dB)

⁵Guaranteed by device design; not tested in production

⁶Inband @ 1176 MHz, Input power = -30 dBm for each tone, 1 MHz tone distance

⁷f1 = 1785 MHz, f2 = 2401 MHz, Input power = -20 dBm for each tone

Datasheet

5

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Electrical Characteristics

Table 5: Electrical Characteristics at T_A= 25 °C, V_CC= 2.8 V, f = 1164– 1300 MHz

Parameter¹

Symbol

Values

Typ.

2.8

1.45

0.2

–

5

–

20.2

Unit

Note / Test Condition

Min.

1.1

–

Max.

2.8

1.8

3

2.8

0.4

10

Supply Voltage

Supply Current

V_CC

I_CC

V

–

mA

µA

V

ON-Mode

OFF-Mode

ON-Mode

OFF-Mode

ON-Mode

OFF-Mode

ON-Mode

–

0.8

0.0

–

18.7

Power on Voltage

Power on Current

V_PON

V

µA

dB

I_PON

1

22.2

2

Insertion Power Gain

f = 1176 MHz

Noise Figure²

|S₂₁|

NF

–

0.80

11

1.20

dB

ON-Mode

f = 1176 MHz Z_S= 50Ω

Input return loss³

f = 1176 MHz

RL_IN

RL_OUT

8.5

10

25

–

Output return loss³

f = 1176 MHz

15

Reverse isolation³

f = 1176 MHz

1/|S₂₁|

40

2

Power up settling time^{4 5}

t_S

–

-16

8

-12

11

–

µs

dBm

OFF- to ON-Mode

ON-Mode

Inband input 1dB-compression IP_1dB

point³

f = 1176 MHz

Inbandinput3rd-orderintercept IIP₃

point^{3 6}

-19

-3

-14

2

–

dBm

ON-Mode

Out of band input 3rd-order in- IIP_3OOB

tercept point^{5 7}

ON-Mode

Stability⁵

k

>1

–

f=20 MHz–10 GHz

¹Based on application described in chapter 4

²PCB losses are substrated

³Veriﬁcation based on AQL; not 100% tested in production

⁴LNA gain changed to 90% of ﬁnal gain value (in dB)

⁵Guaranteed by device design; not tested in production

⁶Inband @ 1176 MHz, Input power = -30 dBm for each tone, 1 MHz tone distance

⁷f1 = 1785 MHz, f2 = 2401 MHz, Input power = -20 dBm for each tone

Datasheet

6

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Application Information

4 Application Information

Pin Conﬁguration and Function

GND

AO

3

4

2

1

5

6

AI

VCC

GND

PON

Figure 2: BGA125N6 Pin Conﬁguration (top view)

Table 6: Pin Deﬁnition and Function

Pin No.

Name

GND

VCC

AO

GND

AI

Function

Ground

1

2

3

4

5

6

DC Supply

LNA Output

Ground

LNA Input

Power On Control

PON

Datasheet

7

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Application Information

Application Board Conﬁguration

N1 BGA125N6

AO, 3

VCC, 2

GND, 1

GND, 4

RFout

L1

C1 (optional)

VCC

RFin

AI, 5

C2

(optional)

PON, 6

PON

Figure 3: BGA125N6 Application Schematic

Table 7: Bill of Materials Table

Name

Value

1nF

≥ 1nF

16nH

Package

0402

PG-TSNP-6-2

Manufacturer

Various

Murata LQW15 type

Inﬁneon

Function

C1 (optional)

C2 (optional)

L1

DC block¹

RF bypass²

Input matching

GNSS LNA

N1

BGA125N6

¹DC block might be realized with pre-ﬁlter in GNSS applications.

²RF bypass recommended to mitigate power supply noise.

Datasheet

8

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Package Information

5 Package Information

Figure 4: PG-TSNP-6-2 Package Outline (0.7mm x 1.1mm x 0.375mm)

NSMD

0.4

0.25

(stencil thickness 100 µm)

Stencil apertures

Copper

Solder mask

Figure 5: Footprint Recommendation

Datasheet

9

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Package Information

Figure 6: Marking Speciﬁcation (top view)

Table 8: Monthly Date Code Marking

Month

2015

2016

2017

A

B

C

D

E

2018

P

Q

R

S

T

U

V

X

Y

Z

2019

2020

2021

A

B

C

D

E

2022

P

Q

R

S

T

U

V

X

Y

Z

2023

2024

2025

A

B

C

D

E

2026

P

Q

R

S

T

U

V

X

Y

Z

1

2

3

4

5

6

7

8

9

a

b

c

d

e

f

g

h

j

p

q

r

s

t

u

v

x

y

z

2

3

a

b

c

d

e

f

g

h

j

p

q

r

s

t

u

v

x

y

z

2

3

a

b

c

d

e

f

g

h

j

p

q

r

s

t

u

v

x

y

z

2

3

F

G

H

J

K

L

G

H

J

K

L

G

H

J

K

L

10

11

12

k

l

n

k

l

n

k

l

n

4

5

4

5

4

5

N

Figure 7: PG-TSNP-6-2 Carrier Tape

Datasheet

10

Revision 2.5

2023-01-10

BGA125N6

Ultra Low Current Low Noise Ampliﬁer for L2/L5 GNSS Applications

Revision History

–

Page or Item

Subjects (major changes since previous revision)

Revision 2.5, 2023-01-10

Revision History

4-6

Update Power on Voltage for ON-Mode

Datasheet

11

Revision 2.5

2023-01-10

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

Theinformationgiveninthisdocumentshallinnoevent For further information on technology, delivery terms

Edition 2023-01-10

Published by

Inﬁneon Technologies AG

81726 Munich, Germany

be regarded as a guarantee of conditions or characteris- and conditions and prices, please contact the nearest

tics ("Beschaﬀenheitsgarantie"). With respect to any ex- Inﬁneon Technologies Oﬀice (www.inﬁneon.com).

amples, hints or any typical values stated herein and/or

any information regarding the application of the prod-

uct, Inﬁneon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without

limitationwarrantiesofnon-infringementofintellectual

property rights of any third party. In addition, any infor-

mation given in this document is subject to customer’s

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Inﬁneon Tech-

nologies oﬀice.

compliance with its obligations stated in this document Except as otherwise explicitly approved by Inﬁneon

and any applicable legal requirements, norms and stan- Technologies in a written document signed by autho-

dards concerning customer’s products and any use of rized representatives of Inﬁneon Technologies, Inﬁneon

the product of Inﬁneon Technologies in customer’s ap- Technologies products may not be used in any applica-

plications. The data contained in this document is ex- tionswhereafailureoftheproductoranyconsequences

clusively intended for technically trained staﬀ. It is the of the use thereof can reasonably be expected to result

responsibility of customer’s technical departments to in personal injury.

Do you have a question about any

aspect of this document?

Email: erratum@inﬁneon.com

Document reference

Doc_Number

evaluate the suitability of the product for the intended

application and the completeness of the product in-

formation given in this document with respect to such

application.


型号：	BGA125N6
厂家：	Infineon
描述：	The BGA125N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially in wearables and mobile cellular IoT applications.
文件：	总13页 (文件大小：815K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BGA125N6 [INFINEON]

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