BGA2003 [NXP]
Silicon MMIC amplifier; 硅MMIC放大器
| 型号： | BGA2003 |
| 厂家： | 
NXP |
| 描述： | Silicon MMIC amplifier |
| 文件： | 总12页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BGA2003
Silicon MMIC amplifier
Product specification
1999 Jul 23
Supersedes data of 1999 Feb 25
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
FEATURES
PINNING
PIN
• Low current
DESCRIPTION
• Very high power gain
1
2
3
4
GND
RF in
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
CTRL (bias current control)
VS + RF out
APPLICATIONS
V +RFout
S
handbook, halfpage
CTRL
3
4
• RF front end
• Wideband applications, e.g. analog and digital cellular
BIAS
telephones, cordless telephones (PHS, DECT, etc.)
CIRCUIT
• Low noise amplifiers
2
1
• Satellite television tuners (SATV)
• High frequency oscillators.
RFin
GND
Top view
MAM427
DESCRIPTION
Marking code: A3.
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
PARAMETER
CONDITIONS
RF input AC coupled
TYP.
MAX.
4.5
UNIT
DC supply voltage
DC supply current
−
V
IS
VVS-OUT = 2.5 V; ICTRL = 1 mA;
RF input AC coupled
11
−
−
−
mA
dB
dB
MSG
NF
maximum stable gain
noise figure
VVS-OUT = 2.5 V; f = 1800 MHz;
Tamb = 25 °C
16
VVS-OUT = 2.5 V; f = 1800 MHz; ΓS = Γopt
1.8
1999 Jul 23
2
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS
VCTRL
IS
PARAMETER
supply voltage
CONDITIONS
RF input AC coupled
MIN.
MAX.
4.5
UNIT
−
−
−
V
V
voltage on control pin
supply current (DC)
2
forced by DC voltage on RF input
or ICTRL
30
mA
ICTRL
Ptot
Tstg
Tj
control current
−
−
3
mA
mW
°C
total power dissipation
storage temperature
operating junction temperature
Ts ≤ 100 °C
135
+150
150
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
350
K/W
CHARACTERISTICS
RF input AC coupled; Tj = 25 °C; unless otherwise specified.
SYMBOL
IS
PARAMETER
supply current
CONDITIONS
MIN.
TYP. MAX. UNIT
VVS-OUT = 2.5 V; ICTRL = 0.4 mA
3
8
−
4.5
11
24
6
mA
mA
dB
V
VS-OUT = 2.5 V; ICTRL = 1.0 mA
VS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
15
−
MSG
maximum stable gain
insertion power gain
isolation
V
V
VS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
−
16
−
−
−
−
−
2
2
−
−
dB
2
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz
18
13
−
19
dB
|s21
s12
NF
|
V
VS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz
14
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 900 MHz
26
dB
VVS-OUT = 2.5 V; IVS-OUT = 0;
f = 1800 MHz
−
20
dB
noise figure
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 900 MHz; ΓS = Γopt
−
1.8
1.8
−6.5
−4.8
dB
V
VS-OUT = 2.5 V; IVS-OUT = 10 mA;
f = 1800 MHz; ΓS = Γopt
−
dB
IP3(in)
input intercept point; note 1
VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;
f = 900 MHz
−
dBm
dBm
VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;
f = 1800 MHz
−
Note
1. See application note RNR-T45-99-B-0514.
1999 Jul 23
3
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS537
200
handbook, halfpage
P
tot
(mW)
100 pF
handbook, halfpage
R1
C
V
S
150
L1
4
RF out
R
CTRL
100
50
V
3
CTRL
BGA2003
2
1
C
0
0
50
100
150
200
RF in
T
(°C)
MGS536
s
Fig.2 Typical application circuit.
Fig.3 Power derating.
MGS538
MGS539
2.5
30
handbook, halfpage
handbook, halfpage
I
CTRL
(mA)
I
VS-OUT
(mA)
2
20
1.5
1
10
0.5
0
0
0
0
0.5
1
1.5
2
0.5
1
1.5
2
2.5
I
(mA)
V
(V)
CTRL
CTRL
ICTRL = (VCTRL − 0.83)/296.
VS-OUT = 2.5 V.
Fig.4 Control current as a function of the control
voltage on pin 3; typical values.
Fig.5 Bias current as a function of the control
current; typical values.
1999 Jul 23
4
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS540
(6)
MGS541
30
20
handbook, halfpage
handbook, halfpage
I
VS-OUT
(mA)
25
I
VS-OUT
(mA)
(5)
(4)
(3)
15
20
15
10
5
10
5
(2)
(1)
0
0
0
−40
0
40
80
120
(°C)
1
2
3
4
5
T
V
(V)
amb
VS-OUT
VS-OUT = 2.5 V.
(1) ICTRL = 0.2 mA.
(4) ICTRL = 1.5 mA.
(2)
ICTRL = 0.4 mA.
(5)
ICTRL = 2.0 mA.
(3) ICTRL = 1.0 mA.
(6) ICTRL = 2.5 mA.
ICTRL = 1 mA.
Fig.6 Bias current (IVS-OUT) as a function of the
ambient temperature with ICTRL as
parameter; typical values.
Fig.7 Bias current (IVS-OUT) as a function of the
voltage at the output pin (VVS-OUT); typical
values.
MGS543
MGS542
30
handbook, halfpage
gain
25
handbook, halfpage
f
T
(dB)
(GHz)
25
20
15
10
5
MSG
G
max
20
G
UM
15
10
5
0
0
0
5
10
15
20
25
0
10
20
I
30
(mA)
I
(mA)
VS-OUT
VS-OUT
VVS-OUT = 2.5 V; f = 1000 MHz.
VVS-OUT = 2.5 V; f = 900 MHz.
Fig.8 Transition frequency as a function of the
bias current (IVS-OUT); typical values.
Fig.9 Gain as a function of the bias current
(IVS-OUT); typical values.
1999 Jul 23
5
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
MGS545
MGS544
40
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG
20
30
20
10
0
G
max
15
G
UM
G
UM
G
max
10
5
0
2
3
4
10
10
10
0
5
10
15
20
25
f (MHz)
I
(mA)
VS-OUT
VVS-OUT = 2.5 V; f = 1800 MHz.
VVS-OUT = 2.5 V; IVS-OUT = 10 mA.
Fig.10 Gain as a function of the bias current
(IVS-OUT); typical values.
Fig.11 Gain as a function of frequency; typical
values.
MGS546
3
min
handbook, halfpage
NF
(dB)
2.5
2
(1)
(3)
(2)
1.5
(4)
1
0.5
0
2
1
10
10
I
(mA)
VS-OUT
(1) f = 2400 MHz.
(2) f = 1800 MHz.
(3) f = 1000 MHz.
(4) f = 900 MHz.
Fig.12 Minimum noise figure as a function of the
bias current (IVS-OUT); typical values.
1999 Jul 23
6
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
90°
+1
unstable region
1.0
0.8
0.6
0.4
0.2
0
source
135°
45°
+2
unstable
region load
+0.5
(1)
(2)
+0.2
+5
(3)
Γopt
0.2
0.5
1
2
5
180°
0°
0
(4)
−5
−0.2
(5)
(6)
f = 900 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 Ω.
(1) G = 23 dB.
(2) G = 22 dB.
(3) G =21 dB.
(4) NF = 1.8 dB.
(5) NF = 2 dB.
(6) NF = 2.2 dB.
−0.5
−2
−45°
−135°
−1
1.0
−90°
MGS547
Fig.13 Noise, stability and gain circles; typical values.
90°
unstable region
source
1.0
unstable
region load
+1
0.8
0.6
0.4
0.2
0
135°
45°
+2
+0.5
(4)
(3)
(2)
(1)
+0.2
+5
0.2
0.5
1
2
5
180°
0°
0
Γopt
f = 1800 MHz; VVS-OUT = 2.5 V;
IVS-OUT = 10 mA; Zo = 50 Ω.
(5)
−5
−0.2
(6)
(7)
(1)
Gmax = 16.1 dB.
(2) G = 16 dB.
(3) G = 15 dB.
(4) G = 14 dB.
(5) NF = 1.9 dB.
(6) NF = 2.1 dB.
(7) NF = 2.3 dB.
−0.5
−2
−45°
−135°
−1
1.0
−90°
MGS548
Fig.14 Noise, stability and gain circles; typical values.
1999 Jul 23
7
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+2
+0.5
+5
0.2
0.5
1
2
5
180°
0°
0
1 GHz
100 MHz
2 GHz
3 GHz
200 MHz
500 MHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
−90°
1.0
MGS549
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90°
135°
45°
500 MHz
900 MHz
1 GHz
200 MHz
1.8 GHz
3 GHz
100 MHz
20
16
12
8
4
180°
0°
−135°
−45°
MGS550
−90°
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
8
1999 Jul 23
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
90°
135°
45°
3 GHz
0.5
0.4
0.3
0.2
0.1
180°
0°
100 MHz
−135°
−45°
MGS551
−90°
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90°
1.0
+1
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+2
+0.5
+5
0.2
0.5
1
2
5
180°
0°
0
100 MHz
900 MHz
200 MHz
1 GHz
−5
−0.2
500 MHz
3 GHz
1.8 GHz
−0.5
−2
−45°
−135°
−1
1.0
−90°
MGS552
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
9
1999 Jul 23
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
p
w
M
B
b
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.15
0.2
0.2
0.1
1.3
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343R
97-05-21
1999 Jul 23
10
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jul 23
11
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5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/04/pp12
Date of release: 1999 Jul 23
Document order number: 9397 750 06134
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