CPV363M4K [INFINEON]
IGBT SIP MODULE; IGBT模块SIP
| 型号： | CPV363M4K |
| 厂家： | 
Infineon |
| 描述： | IGBT SIP MODULE |
| 文件： | 总10页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-5.043A
CPV363M4K
Short Circuit Rated UltraFast IGBT
IGBT SIP MODULE
1
Features
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
D 1
D 2
D 3
D 4
D 5
D 6
Q 1
Q 2
Q 3
Q 4
Q 5
Q 6
3
6
9
4
1 5
1 0
1 6
1 2
1 8
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
7
1 3
1 9
Output Current in a Typical 20 kHz Motor Drive
6.7 ARMS per phase (1.94 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Units
Absolute Maximum Ratings
Parameter
Max.
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
11
IC @ TC = 100°C
6.0
ICM
22
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
22
IF @ TC = 100°C
6.1
IFM
22
10
tsc
µs
V
VGE
Gate-to-Emitter Voltage
± 20
VISOL
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
2500
36
VRMS
W
PD @ TC = 25°C
PD @ TC = 100°C
14
TJ
-40 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
3.5
5.5
Units
°C/W
R
R
R
θJC(IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
θJC(DIODE)
θCS(MODULE)
–––
0.1
–––
–––
Wt
Weight of module
20 (0.7)
g (oz)
2/24/98
CPV363M4K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Breakdown Voltage 600 ––– –––
V
VGE = 0V, IC = 250µA
––– 0.45 ––– V/°C VGE = 0V, IC = 1.0mA
IC = 6.0A
Collector-to-Emitter Saturation Voltage ––– 1.72 2.10
VGE = 15V
––– 2.00 –––
––– 1.60 –––
3.0 ––– 6.0
V
IC = 11A
See Fig. 2, 5
IC = 6.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
––– -13 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
3.0 6.0 –––
––– ––– 250
––– ––– 2500
––– 1.4 1.7
––– 1.3 1.6
S
VCE = 100V, IC = 12A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
V
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
––– 61
––– 7.4
––– 27
91
11
40
IC = 6A
nC VCC = 400V
See Fig. 8
Qge
Qgc
td(on)
tr
––– 55 –––
––– 24 –––
––– 107 160
––– 92 140
––– 0.28 –––
––– 0.10 –––
––– 0.39 0.50
10 ––– –––
TJ = 25°C
RiseTime
ns
IC = 6.0A, VCC = 480V
VGE = 15V, RG = 23Ω
td(off)
tf
Turn-Off Delay Time
FallTime
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
mJ
µs
Ets
tsc
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 23Ω, VCPK < 500V
td(on)
tr
td(off)
tf
Turn-On Delay Time
RiseTime
––– 54 –––
––– 24 –––
––– 161 –––
––– 244 –––
––– 0.60 –––
––– 740 –––
––– 100 –––
––– 9.3 –––
TJ = 150°C,
See Fig.10, 11, 18
ns
IC = 6.0A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
Turn-Off Delay Time
FallTime
E
ts
Total Switching Loss
Input Capacitance
mJ
pF
ns
A
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
––– 42
––– 80 120
Diode Peak Reverse Recovery Current ––– 3.5 6.0
––– 5.6 10
60
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
14
IF = 12A
Irr
VR = 200V
Qrr
Diode Reverse Recovery Charge
––– 80 180
––– 220 600
di/dt=200A/µs
d i(rec)M / dt Diode Peak Rate of Fall of Recovery
During tb
––– 180 ––– A/µs TJ = 25°C See Fig.
––– 120 ––– TJ = 125°C 17
Notes:
Pulse width 5.0µs,
Repetitive rating; VGE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23Ω, ( See fig. 19 )
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
CPV363M4K
3.50
12
10
8
T c = 9 0°C
T j = 1 25 °C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V cc = 50 % o f R a ted Vo lta g e
2.92
2.33
1.75
1.17
6
4
0.58
2
0.00
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
T = 25oC
J
T = 150 oC
J
T = 150 oC
J
10
T = 25oC
J
1
V
= 15V
GE
V
= 50V
CC
20µs PULSE WIDTH
5µs PULSE WIDTH
0.1
0.1
1
10
5
10
15
V
, Collector-to-Emitter Voltage (V)
CE
V
, Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
CPV363M4K
1 2
3.0
2.0
1.0
V
= 15V
V
= 15V
GE
GE
80 us PULSE WIDTH
I = 12A
C
9
6
3
0
I = 6A
C
I = 3A
C
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
°
T
, Junction Temperature ( C)
J
T
, Case Tem pera ture (°C)
C
Fig. 4 - Maximum Collector Current vs.
Fig. 5 - Typical Collector-to-Emitter Voltage
Case Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
D M
0.02
0 .1
0.01
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Note s:
1. Du ty factor D =
t
/ t
1
2
2. Pe ak T = P
x Z
+ T
C
D M
J
th JC
1
0.01
0.0000 1
0.0001
0.001
0.0 1
0.1
1 0
t
, R e ctan gu la r P ulse D ura tion (s ec )
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
CPV363M4K
1500
1200
900
600
300
0
20
16
12
8
V
= 0V,
f = 1MHz
C
V
I
C
= 400V
= 6.0A
GE
CC
C
= C + C
SHORTED
ies
ge
gc ,
gc
ce
C
= C
gc
res
C
= C + C
ce
oes
C
ies
C
C
oes
res
4
0
1
10
100
0
20
40
60
80
V
, Collector-to-Emitter Voltage (V)
CE
Q , Total Gate Charge (nC)
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.0
0.8
0.6
0.4
0.2
0.0
10
= 15V
= 480V
V
V
T
= 480V
CC
R
= 23Ω
G
= 15V
= 25
V
GE
J
GE
°
C
V
CC
I
= 6.0A
C
I = 12A
C
1
I = 6A
C
I = 3A
C
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
°
T , Junction Temperature ( C )
R
, Gate Resistance (Ohm)
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
CPV363M4K
1 0 0
1 0
1
1.5
Ω
R
T
= 23O
VG E = 20V
TJ = 125°C
G
J
°
= 150 C
480V
=
V
CC
V
GE
= 15V
1.2
0.9
0.6
0.3
0.0
S AFE OP ERA TING AR EA
A
0
3
6
9
12
15
1
1 0
1 0 0
1 0 0 0
I
, Collector-to-emitter Current (A)
C
V
, Collector-to-Em itter Voltage (V)
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
T
= 150°C
= 125°C
J
T
J
10
T
=
25°C
J
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
CPV363M4K
160
120
80
100
10
1
VR = 20 0V
TJ = 12 5°C
TJ = 25 °C
VR = 2 00V
TJ = 1 25°C
TJ = 2 5°C
I
= 24A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
I
= 6.0A
F
I
= 6.0A
F
40
0
100
1000
100
1000
di /d t - (A/µs)
f
di /d t - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
10000
600
VR = 200 V
TJ = 125 °C
TJ = 25°C
VR = 20 0V
TJ = 12 5°C
TJ = 25 °C
1000
100
10
400
I
= 6.0A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
200
I
= 24A
F
I
= 6.0A
F
0
100
100
1000
1000
di /d t - (A/µs)
di /dt - (A/µs)
f
f
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt
CPV363M4K
9 0% Vge
Same type
device as
D.U.T.
+Vg e
Vce
430µF
80%
90 % Ic
of Vce
D.U.T.
1 0% Vce
Ic
Ic
5% Ic
td (off)
tf
t1 +5µ S
VceIcdt
t1
Eoff =
Fig. 18a - Test Circuit for Measurement of
∫
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
d d
trr
G ATE VO LTAGE D .U .T.
Qrr =
Ic dt
Ic
∫
tx
1 0% +Vg
+Vg
tx
10 % Irr
10% Vcc
Vcc
DUT VOLTAGE
AN D C URR ENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
9 0% Ic
Ic
DIODE RECOVERY
W AVEFORM S
5% Vce
tr
td(on)
t2
VVceIcdt
t1
Eon =
t4
∫
Erec = V
Vd Ic dt
∫
t3
DIOD E REVERSE
REC OVER Y EN ER GY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
CPV363M4K
Vg
GATE SIGN AL
DEVICE UNDER TEST
CURR EN T D .U .T.
VOL TAGE IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
10 00V
V *
c
0 - 480V
50V
60 00µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
CPV363M4K
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (Figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline IMS-2
62.43 (2.458)
53.85 (2.120)
7.87 (.310)
5.46 (.215)
3.91 (.154)
2X
NOTES:
1. Tolerance unless otherwise
specified ± 0.254 (.010).
2. Controlling D imension: Inch.
3. Dimensions are shown in
Millimeter (Inches).
21.97 (.865)
4. Term inal numbers are shown
for reference only.
1
2
3
4
5
6
7
8
9
10 1 1 1 2 13 14 1 5 1 6 17 18 19
0.38 (.015)
3.94 (.155)
1.27 (.050)
3.05 ± 0.38
(.120 ± .015)
1.27 (.050)
13X
4.06 ± 0.51
(.160 ± .020)
2.54 (.100)
6X
0.76 (.030)
13X
0.51 (.020)
5.08 (.200)
6X
6.10 (.240)
IMS-2 Package Outline (13 Pins)
D im ens ion s in M illim ete rs and (Inc he s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
2/98
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