CPV363 [INFINEON]
IGBT SIP MODULE Fast IGBT; IGBT模块SIP快速IGBT
| 型号： | CPV363 |
| 厂家： | 
Infineon |
| 描述： | IGBT SIP MODULE Fast IGBT |
| 文件： | 总8页 (文件大小：421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Previous Datasheet
Index
Next Data Sheet
PD - 5.023B
CPV363MF
IGBT SIP MODULE
Fast IGBT
1
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
D1
D2
D3
D4
D5
D6
Q1
Q2
Q3
Q4
Q5
3
6
9
4
15
10
16
Q6
12
18
Product Summary
7
13
19
Output Current in a Typical 5.0 kHz Motor Drive
7.65 ARMS per phase (2.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
16
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
IC @ TC = 100°C
8.7
ICM
50
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
50
IF @ TC = 100°C
6.1
IFM
50
VGE
±20
V
VRMS
W
VISOL
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
2500
36
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
14
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
—
Max.
Units
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
3.5
5.5
—
θJC (DIODE)
θCS (MODULE)
—
°C/W
0.1
Wt
Weight of module
20 (0.7)
—
g (oz)
Revision 1
C-149
To Order
Previous Datasheet
Index
Next Data Sheet
CPV363MF
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.69
V/°C VGE = 0V, IC = 1.0mA
IC = 8.7A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.5 1.6
VGE = 15V
—
1.9
1.6
—
—
—
V
IC = 16A
See Fig. 2, 5
—
IC = 8.7A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
6.0 8.0
—
S
VCE = 100V, IC = 8.7A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250
2500
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.4 1.7
1.3 1.6
V
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±500 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
23 30
2.4 5.9
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 16A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
See Fig. 8
TJ = 25°C
9.2
25
21
15
—
—
IC = 8.7A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
210 300
300 450
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
diode reverse recovery
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.44
2.0
—
—
mJ See Fig. 9, 10, 11, 18
2.4 3.2
td(on)
tr
td(off)
tf
25
21
—
—
—
—
—
—
—
—
60
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 8.7A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
Turn-Off Delay Time
Fall Time
280
550
3.4
670
100
10
Ets
Total Switching Loss
Input Capacitance
mJ diode reverse recovery
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
42
TJ = 25°C See Fig.
80 120
3.5 6.0
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 12A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
5.6
10
VR = 200V
Qrr
80 180
220 600
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
180
116
—
—
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-150
To Order
Previous Datasheet
Index
Next Data Sheet
CPV363MF
12
3.7
2.8
9
S
6
1.9
0.9
TC= 90°C
TJ = 125°C
3
Power Factor = 0.8
Modulation Depth = 0.8
VCC = 60% of Rated Voltage
0
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
10 00
1 00
1000
100
10
T
= 25°C
J
T
= 150°C
J
T
= 150°C
10
J
T
= 25°C
J
1
V
= 100V
V
= 15V
CC
G E
5µs P ULSE W IDTH
20µs PULSE W IDTH
0.1
1
5
10
15 20
1
10
V
, G ate-to-E m itter Voltage (V )
VC E , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-151
To Order
Previous Datasheet
Index
Next Data Sheet
CPV363MF
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs P ULSE W IDTH
I
= 34A
C
I
= 17A
= 8.5A
C
C
I
-60 -40 -20
0
20
40
60
80 1 00 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
TC , Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.02
0.1
0.01
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-152
To Order
Previous Datasheet
Index
Next Data Sheet
CPV363MF
1400
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 17A
GE
ies
C E
C
= C + C
,
C
ce
SHORTED
ge
gc
= C
gc
1200
1000
800
600
400
200
0
res
oes
= C + C
ce
gc
C
ies
C
oes
4
C
res
0
1
10
100
0
5
10
15
20
25
30
V
, C ollector-to-E m itter V oltage (V )
Q g , Total Gate Charge (nC)
C E
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
2.7
2.6
2.5
2.4
2.3
2.2
V
V
T
I
= 480V
= 15V
= 25°C
= 17A
C C
G E
C
I
= 34A
C
C
I
= 17A
= 8.5A
C
C
I
Ω
R
V
V
= 23
G
GE
CC
= 15V
= 480V
1
-60 -40 -20
0
20
40
60
8 0 1 00 120 140 160
0
10
20
30
40
50
60
T
C
, Case Tem perature (°C)
R
, G ate Resistance (Ω)
G
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-153
To Order
Previous Datasheet
Index
Next Data Sheet
CPV363MF
10
1000
100
10
Ω
= 23
R
T
V
V
V
T
= 20V
= 125°C
G
G E
J
= 150°C
= 480V
= 15V
C
C C
G E
8
6
4
2
SAFE OPE RA TING A RE A
1
1
10
100
1000
0
10
20
30
40
V
, C olle ctor-to-E m itter V oltage (V )
I
, C ollecto r-to-E m itter C urrent (A )
C
CE
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
T = 150°C
J
T = 125°C
J
10
T = 25°C
J
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-154
To Order
Previous Datasheet
Index
Next Data Sheet
CPV363MF
100
10
1
160
120
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 24A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
80
40
0
I
= 6.0A
F
I
= 6.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dfi/dt
Fig. 14 - Typical Reverse Recovery vs. dfi/dt
10000
600
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
1000
I
= 6.0A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
200
100
I
= 24A
F
I
= 6.0A
F
0
100
10
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dfi/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-155
To Order
Previous Datasheet
Index
Next Data Sheet
CPV363MF
90% Vge
+Vge
Vce
Same type
device as
D.U.T.
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
td(off)
tf
D.U.T.
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 5 - IMS-2 Package (13 pins) Section D - page D-14
C-156
To Order
相关型号：
CPV363MFPBF
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, IMS-2, 13 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明