DSL70 [INFINEON]

Silicon TVS diodes Array; 硅TVS二极管阵列
DSL70
型号: DSL70
厂家: Infineon    Infineon
描述:

Silicon TVS diodes Array
硅TVS二极管阵列

二极管 电视
文件: 总6页 (文件大小:793K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSL70  
Silicon TVS diodes Array  
ESD / transient protection of e.g. ADSL, VDSL,  
ISDN, WAN, LAN, I²C Bus, Microcontroller Inputs,  
Video and other high-speed data lines in telecom  
applications:  
IEC61000-4-2 (ESD): ± ±15 kV (Air / Contact)  
IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns)  
IEC61000-4-5 (Lightning): 27 A (8/20 µs)  
Very low capacitance  
Extremly low reverse current < 5 nA  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
DSL70  
4
3
2
D3  
D2  
D4  
D1  
1
Type  
DSL70  
Package  
SOT143  
Configuration  
2 channel, rail to rail  
Marking  
E4s  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
ESD contact discharge per diode  
Peak pulse current (t = 8 / 20 µs)  
Symbol  
V
ESD  
I
pp  
Value  
15  
27  
Unit  
kV  
A
1)  
2)  
p
245  
W
°C  
Peak pulse power (t = 8 / 20 µs)  
Operating temperature range  
Storage temperature  
P
T
T
p
pk  
-55...125  
-65...150  
op  
stg  
1V  
ESD  
according to IEC61000-4-2  
2I according to IEC61000-4-5  
pp  
2009-03-11  
1
DSL70  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics -  
Reverse working voltage  
Reverse current  
-
-
-
-
50  
5
V
nA  
V
RWM  
I
R
V = 50 V  
R
1)  
Forward clamping voltage  
V
V
FC  
I
= 1 A, t = 8/20 µs  
-
-
-
-
1
2.5  
5
1.5  
3
6
PP  
P
I
= 10 A, t = 8/20 µs  
PP  
P
I
= 24 A, t = 8/20 µs  
PP  
P
I
= 27 A, t = 8/20 µs  
6
9
PP  
P
pF  
Diode capacitance  
V = 0 V, f = 1 MHz, between I/0 and GND  
C
T
-
-
2.5  
1.25  
5
2.5  
R
V = 0 V, f = 1 MHz, between I/0 pins  
R
1I according to IEC61000-4-5  
PP  
2009-03-11  
2
DSL70  
Power derating curve P = ƒ (T )  
Forward clamping voltage V = ƒ(I )  
pk  
A
FC  
PP  
t = 8 / 20 µs  
p
8
110  
V
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6
5
4
3
2
1
0
°C  
A
0
25  
50  
75  
100  
150  
0
5
10  
15  
20  
25  
35  
T
I
PP  
A
Diode capacitance C = ƒ±(V )  
T
R
f = 1MHz  
3
I/O to GND  
pF  
1
0
0
V
5
10  
15  
20  
30  
V
R
2009-03-11  
3
DSL70  
Application example DSL70  
dual channel, rail to rail configuration  
Connector  
Protected signal line  
Protected signal line  
I/O  
I/O  
ESD sensitive  
device  
Vcc  
4
3
D3  
The protection diode should be placed  
very close to the location where the  
ESD or other transients can occur to  
keep loops and inductances as small  
as possible. Pin 1 should be connected  
directly to a ground plane on the board.  
D4  
D2  
D1  
1
2
2009-03-11  
4
Package SOT143  
DSL70  
Package Outline  
0.1  
1
0.1  
2.9  
B
1.9  
0.1 MAX.  
4
3
1
2
A
0.2  
0.08...0.15  
+0.1  
0.8  
-0.05  
0...8˚  
+0.1  
0.4  
-0.05  
M
M
0.2  
0.25  
B
A
1.7  
Foot Print  
0.8 1.2 0.8  
1.2  
0.8  
0.8  
Marking Layout (Example)  
Manufacturer  
2005, June  
RF s  
Date code (YM)  
Pin 1  
BFP181  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
3.15  
1.15  
Pin 1  
2009-03-11  
5
DSL70  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2009-03-11  
6

相关型号:

DSL70E6327HTSA1

Trans Voltage Suppressor Diode, 245W, 50V V(RWM), Unidirectional, 4 Element, Silicon, ROHS COMPLIANT PACKAGE-4
INFINEON

DSLP0080T023G6RP

SIDACTOR G.FAST 8V 30A SOT23-6
LITTELFUSE

DSLP0120T023G6RP

SIDACTOR G.FAST 12V 30A SOT23-6
LITTELFUSE

DSLP0180T023G6RP

SIDACTOR G.FAST 18V 30A SOT23-6
LITTELFUSE

DSLP0240T023G6RP

SIDACTOR G.FAST 24V 30A SOT23-6
LITTELFUSE

DSLP0360T023G6RP

SIDACTOR G.FAST 36V 30A SOT23-6
LITTELFUSE

DSLVDS1001

400Mbps LVDS 单路高速差动驱动器
TI

DSLVDS1001DBVR

400Mbps LVDS 单路高速差动驱动器 | DBV | 5 | -40 to 85
TI

DSLVDS1001DBVT

400Mbps LVDS 单路高速差动驱动器 | DBV | 5 | -40 to 85
TI

DSLVDS1047

3.3V LVDS 四通道高速差动线路驱动器
TI

DSLVDS1047PWR

3.3V LVDS 四通道高速差动线路驱动器 | PW | 16 | -40 to 85
TI

DSLVDS1047PWT

3.3V LVDS 四通道高速差动线路驱动器 | PW | 16 | -40 to 85
TI