ESD5V3S1U-02LRH [INFINEON]
Silicon TVS Diode; 硅TVS二极管
| 型号： | ESD5V3S1U-02LRH |
| 厂家： | 
Infineon |
| 描述： | Silicon TVS Diode |
| 文件： | 总7页 (文件大小：561K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD5V3S1U-02LRH
Silicon TVS Diode
• ESD / transient protection of data and power lines
in low voltage applications according to:
IEC61000-4-2 (ESD): ± ±25 kV (air) 20 kV (contact)
IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns)
IEC61000-4-5 (surge): 5.5 A / 66 W (8/20 µs)
• Small form factor (0402 inch):
3
1.0 x 0.6 x 0.4 mm
•±Uni-directional, working voltage up to 5.3 V
• Ultralow clamping voltage,
protects against both positive and
negative ESD strikes
• Ultralow dynamic resistance 0.27Ω
• Very fast response time
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Applications
• Digital interfaces (medium speed)
• Vcc protection
• Keypad, trackball protection, camera, displays in:
± mobile communications (smartphone,
camera phone &±added functions e.g. mobile TV)
• Digital consumer & computer electronics:
• Industrial: security systems, sensors, white goods.
ESD5V3S1U-02LRH
1
2
Type
ESD5V3S1U-02LRH
Package
TSLP-2-17
Configuration
1 line, uni-directional
Marking
E2
2009-12-07
1
ESD5V3S1U-02LRH
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
ESD air / contact discharge
Peak pulse current (t = 8 / 20 µs)
Peak pulse power (t = 8 / 20 µs
Operating temperature range
Storage temperature
Symbol
V
ESD
I
pp
Value
25 / 20
5.5
Unit
kV
A
W
°C
1)
2)
p
2)
66
P
T
T
p
pk
-55...125
-65...150
op
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
-
-
-
5.3
-
V
Reverse working voltage
Breakdown voltage
V
V
RWM
(BR)
5.7
I
= 1 mA
(BR)
-
-
0.1 µA
Reverse current
I
R
V = 3.3 V
R
V
Clamping voltage
V
CL
2)
I
= 1 A, t = 8/20 µs
-
-
-
7
8
9
9
10
11
PP
p
2)
2)
I
= 3.5 A, t = 8/20 µs
PP
p
I
= 5.5 A, t = 8/20 µs
PP
p
Forward clamping voltage
V
FC
2)
I
= 1 A, t = 8/20 µs
-
-
-
1.2
2
2.5
2
3
3.5
PP
p
2)
2)
I
= 3.5 A, t = 8/20 µs
PP
p
I
= 5.5 A, t = 8/20 µs
PP
p
pF
Diode capacitance
V = 0 V, f = 1 MHz
C
R
T
-
-
35
20
40
-
R
V = 2.5 V, f = 1 MHz
R
3)
Dynamic resistance (t = 30 ns)
-
0.27
-
Ω
D
1V
according to IEC61000-4-2
ESD
2I according to IEC61000-4-5
pp
3 according to TLP tests
2009-12-07
2
ESD5V3S1U-02LRH
Power derating curve P = ƒ (T )
Clamping voltage, V = ƒ(I )
cl pp
pk
A
t = 8 / 20 µs
p
11
V
110
%
90
80
70
60
50
40
30
20
10
0
9
8
7
6
5
°C
A
0
25
50
75
100
150
0
1
2
3
4
6
T
I
pp
A
Forward clamping voltage V = ƒ(I )
Reverse current I = ƒ (T )
FC
PP
R
A
t = 8 / 20 µs
V = 3.3 V
p
R
10 -6
A
4
V
3
2.5
2
10 -7
10 -8
10 -9
1.5
1
0.5
0
A
°C
0
1
2
3
4
5
6
7
9
-75 -50 -25
0
25 50 75 100
150
I
T
A
pp
2009-12-07
3
ESD5V3S1U-02LRH
Breakdown voltage V = ƒ(T )
Diode capacitance C = ı(V )
T R
BR
A
I = 1 mA
f = 1MHz
R
7.5
V
40
pF
7
6.75
6.5
30
25
20
15
10
5
6.25
6
5.75
5.5
0
0
°C
V
-75 -50 -25
0
25 50 75 100
150
1
2
3
4
6
T
V
R
A
2009-12-07
4
ESD5V3S1U-02LRH
Application example
single channel, uni-directional
Connector
Protected signal line
I/O
ESD
1
2
sensitive
device
The protection diode
should be placed very
close to the location
where the ESD can
occur to keep loops and
inductances as small as
possible.
2009-12-07
5
TSLP-2-17 (mm)
ESD5V3S1U-02LRH
Package Outline
Top view
Bottom view
+±0±1
-±0±ꢁ
±0ꢁ9
±±0±ꢀ
±06
±0±ꢀ MAX0
2
2
1
1
1)
±±0±ꢁꢀ
±0ꢀ
Cathode
marking
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
±06
±04ꢀ
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BAR9±-±2LRH
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø18± mm = 1ꢀ0±±± Pieces/Reel
Reel øꢁꢁ± mm = ꢀ±0±±± Pieces/Reel (optional)
±0ꢀ
4
±076
Cathode
marking
2009-12-07
6
ESD5V3S1U-02LRH
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
±
±2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2009-12-07
7
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