IAUC120N04S6L009 [INFINEON]
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.;
| 型号： | IAUC120N04S6L009 |
| 厂家： | 
Infineon |
| 描述： | Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications. |
| 文件： | 总9页 (文件大小：668K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUC120N04S6L009
OptiMOS™- 6 Power-Transistor
Product Summary
VDS
40
0.9
120
V
RDS(on),max
ID
mW
A
Features
PG-TDSON-8
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
1
Type
Package
Marking
IAUC120N04S6L009
PG-TDSON-8
6N04L009
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
120
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, VGS=10V
A
T C=25°C, VGS=10V2,3)
150
T C=100°C, VGS=10V2)
120
Pulsed drain current2)
I D,pulse
EAS
T C=25°C
480
400
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=60A, R G,min=25W
mJ
A
I AS
R G,min=25W
60
VGS
-
V
±16
Ptot
T C=25°C
Power dissipation
150
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2019-04-15
IAUC120N04S6L009
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
-
-
1.0
50
K/W
Thermal resistance, junction -
ambient
6 cm2 cooling area4)
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D=90µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
1.2
1.6
2.0
VDS=40V, VGS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
VDS=40V, VGS=0V,
T j=125°C2)
25
I GSS
VGS=16V, VDS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=4.5V, I D=60A
VGS=10V, I D=60A
Drain-source on-state resistance
0.98
0.78
1.2
mW
0.96
Rev. 1.0
page 2
2019-04-15
IAUC120N04S6L009
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
6004
1640
84
7806 pF
2132
VGS=0V, VDS=25V,
f =1MHz
126
7
-
-
-
-
ns
5
VDD=20V, VGS=10V,
I D=120A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
39
19
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
17
18
23
27
128
-
nC
Q gd
VDD=32V, I D=120A,
VGS=0 to 10V
Q g
97
Vplateau
Gate plateau voltage
2.85
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
120
480
T C=25°C
I S,pulse
VGS=0V, I F=60A,
T j=25°C
VSD
Diode forward voltage
-
-
0.8
66
1.1
-
V
VR=20V, I F=50A,
diF/dt =100A/µs
Reverse recovery time2)
Reverse recovery charge2)
t rr
ns
Q rr
-
85
-
nC
1) Current is limited by package; with an R thJC = 1K/W the chip is able to carry 308 A at 25°C.
2) The parameter is not subject to production test- verified by design/characterization.
3)
The product can operate at a current of ID=150A for a limited period of time up to t=100h at Tc=25ꢀ°C
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2019-04-15
IAUC120N04S6L009
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
150
140
130
120
110
100
90
150
100
50
80
70
60
50
40
30
20
10
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
10 µs
100
0.5
100 µs
0.1
10-1
0.05
0.01
150 µs
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2019-04-15
IAUC120N04S6L009
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
12
480
10 V
3.5 V
440
4.5 V
10
400
360
320
280
240
200
160
120
80
2.75 V
8
3 V
6
4
2
0
3 V
2.75 V
3.5 V
4.5 V
40
10 V
0
0
1
2
3
4
0
50 100 150 200 250 300 350 400
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; VGS = 10 V
1.75
1.25
0.75
0.25
450
400
350
300
250
200
150
175 °C
100
25 °C
50
0
-55 °C
1.5
2
2.5
3
3.5
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2019-04-15
IAUC120N04S6L009
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
2
Ciss
Coss
900 µA
1.5
103
90 µA
1
0.5
0
Crss
102
101
0
10
20
30
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
150 °C
102
10
25 °C
101
175 °C
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2019-04-15
IAUC120N04S6L009
13 Avalanche energy
14 Drain-source breakdown voltage
EAS = f(T j)
VBR(DSS) = f(T j); I D = 1 mA
44
2000
1900
1800
1700
1600
1500
1400
1300
42
40
38
1200
15 A
1100
1000
900
800
30 A
700
600
500
60 A
400
300
200
100
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 100 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
Qg
8 V
32 V
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
20
40
60
80
100
Qgate [nC]
Rev. 1.0
page 7
2019-04-15
IAUC120N04S6L009
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2019-04-15
IAUC120N04S6L009
Revision History
Version
Date
Changes
Rev. 1.0
page 9
2019-04-15
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