IAUC120N04S6N006 [INFINEON]
A portfolio of 18 products (RDS (on) max from 0,5 mΩ to 4.4 mΩ which enables the best product fit in the applications.;
| 型号： | IAUC120N04S6N006 |
| 厂家： | 
Infineon |
| 描述： | A portfolio of 18 products (RDS (on) max from 0,5 mΩ to 4.4 mΩ which enables the best product fit in the applications. |
| 文件： | 总10页 (文件大小：936K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUC120N04S6N006
OptiMOS™- 6 Power-Transistor
Product Summary
VDS
40
0.6
120
V
RDS(on),max
ID
mW
A
Features
PG-TDSON-8-53
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
Type
Package
Marking
IAUC120N04S6N006
PG-TDSON-8-53 6N04N006
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
VGS=10V,
Chip Limitation1,2)
VGS=10V,
DC current3)
Unit
I D
Drain current
405
120
55
A
Ta=85°C, VGS=10V,
RthJA on 2s2p4,5)
Pulsed drain current5)
I D,pulse
EAS
T C=25°C, t p =100µs
1500
750
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=60A, R G=25W
mJ
A
I AS
R G=25W
120
VGS
-
±20
V
Ptot
T C=25°C
Power dissipation
187
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2020-06-05
IAUC120N04S6N006
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics5)
R thJC
Thermal resistance, junction - case
-
-
-
-
-
0.8
-
K/W
Thermal resistance,
junction - ambient4)
R thJA
26
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D=130µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.2
2.6
3.0
VDS=40V, VGS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
VDS=40V, VGS=0V,
T j=125°C2)
33
I GSS
VGS=20V, VDS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=7V, I D=60A
VGS=10V, I D=60A
Drain-source on-state resistance
0.54
0.46
0.85
0.60
mW
Rev. 1.0
page 2
2020-06-05
IAUC120N04S6N006
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
7607
2249
100
13
10117 pF
2991
VGS=0V, VDS=25V,
f =1MHz
150
-
-
-
-
ns
8
VDD=20V, VGS=10V,
I D=120A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
33
16
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
31
22
40
32
151
-
nC
Q gd
VDD=32V, I D=120A,
VGS=0 to 10V
Q g
116
4.0
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current5)
Diode pulse current5)
I S
-
-
-
-
256
T C=25°C
I S,pulse
1780
VGS=0V, I F=60A,
T j=25°C
VSD
Diode forward voltage
Reverse recovery time2)
-
-
0.8
66
1.1
-
V
VR=20V, I F=50A,
diF/dt =100A/µs
t rr
ns
Reverse recovery charge2)
Q rr
-
83
-
nC
1)
Practically the current is limited by overall system design including customer specific PCB.
2) The parameter is not subject to production test - verified by characterization.
3) The product can operate at specified current based on best practice to minimize electromigration at the solder joint.
For rare events and inrush currents the value may be exceeded.
4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
5) The parameter is not subject to production test - verified by design.
Rev. 1.0
page 3
2020-06-05
IAUC120N04S6N006
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
250
200
150
100
50
500
450
400
350
300
250
200
150
Chip limit
DC current
100
50
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
10000
1000
100
10
1 µs
100
10 µs
0.5
0.1
10-1
100 µs
0.05
0.01
10-2
150 µs
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2020-06-05
IAUC120N04S6N006
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
1200
4
3
2
1
0
10 V
7 V
1100
5.5 V
1000
4.5 V
900
800
700
600
500
400
300
200
100
0
5 V
5 V
4.5 V
5.5 V
7 V
10 V
0
1
2
3
0
50 100 150 200 250 300 350 400
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 60 A; VGS = 10 V
1
0.75
0.5
1400
1200
1000
800
600
175 °C
400
25 °C
200
-55 °C
0
0.25
3
3.5
4
4.5
VGS [V]
5
5.5
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 1.0
page 5
2020-06-05
IAUC120N04S6N006
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
105
4
3.5
3
104
Ciss
1300 µA
Coss
2.5
130 µA
103
2
1.5
1
Crss
102
0.5
0
101
0
10
20
30
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start) >25°C
103
1000
102
100
10
1
25 °C
100 °C
25 °C
150 °C
175 °C
101
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2020-06-05
IAUC120N04S6N006
13 Avalanche energy
14 Drain-source breakdown voltage
EAS = f(T j)
VBR(DSS) = f(T j); I D = 1 mA
44
2000
1500
1000
42
40
38
30 A
60 A
500
120 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 120 A pulsed
parameter: VDD
10
V GS
8 V
9
8
7
6
5
4
3
2
1
0
Qg
32 V
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
50
100
150
Qgate [nC]
Rev. 1.0
page 7
2020-06-05
IAUC120N04S6N006
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Packaging
Rev. 1.0
page 8
2020-06-05
IAUC120N04S6N006
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2020
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2020-06-05
IAUC120N04S6N006
Revision History
Version
Date
Changes
05.06.2020 Final Data Sheet
Revision 1.0
Rev. 1.0
page 10
2020-06-05
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