IAUC45N04S6N070H [INFINEON]
车规级MOSFET;
| 型号： | IAUC45N04S6N070H |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总10页 (文件大小：907K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUC45N04S6N070H
OptiMOS™- 6 Power-Transistor
Product Summary
VDS
40
7.0
45
V
RDS(on),max
ID
mW
A
Features
PG-TDSON-8-57
• OptiMOS™ - power MOSFET for automotive applications
• Half-Bridge - N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
IAUC45N04S6N070H PG-TDSON-8-57 6N04N070
Maximum ratings per channel, at T j=25 °C, unless otherwise specified
Package
Marking
Value
Parameter
Symbol
Conditions
VGS=10V,
Chip Limitation1,2)
VGS=10V,
DC current3)
Unit
I D
Drain current
55
45
14
A
Ta=85°C, VGS=10V,
RthJA on 2s2p2,4)
Pulsed drain current2)
I D,pulse
EAS
T C=25°C, t p =100µs
119
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=9A, R g,min=25Ω
38
mJ
A
I AS
R g,min=25Ω
9
±20
VGS
-
V
Ptot
T C=25°C
Power dissipation
41
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2020-09-28
IAUC45N04S6N070H
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
-
-
3.7
-
K/W
Thermal resistance,
junction - ambient4)
R thJA
36
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D=9µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.2
2.6
3.0
VDS=40V, VGS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
VDS=40V, VGS=0V,
T j=125°C2)
10
I GSS
VGS=20V, VDS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=7V, I D=22A
VGS=10V, I D=22A
Drain-source on-state resistance
6.8
5.6
9.0
7.0
mW
Rev. 1.0
page 2
2020-09-28
IAUC45N04S6N070H
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
539
173
14
3
701 pF
224
VGS=0V, VDS=25V,
f =1MHz
21
-
-
-
-
ns
1
VDD=20V, VGS=10V,
I D=45A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
4
2
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
2.5
2.1
9
3.4
3.1
12
-
nC
Q gd
VDD=32V, I D=45A,
VGS=0 to 10V
Q g
Vplateau
Gate plateau voltage
4.7
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
T C=25°C
-
-
-
-
37
I S,pulse
T C=25°C, t p =100µs
150
VGS=0V, I F=22A,
T j=25°C
VSD
Diode forward voltage
Reverse recovery time2)
-
-
-
0.8
16
6
1.1
V
VR=20V, I F=45A,
diF/dt =100A/µs
t rr
-
-
ns
nC
Reverse recovery charge2)
Q rr
1)
Practically the current is limited by overall system design including customer specific PCB.
2) The parameter is not subject to production test -specified by design.
3) The product can operate at specified current based on best practice to minimize electromigration at the solder joint.
For rare events and inrush currents the value may be exceeded.
4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Rev. 1.0
page 3
2020-09-28
IAUC45N04S6N070H
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
50
40
30
20
10
0
80
Chip limit
60
DC current
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
0.5
100
0.1
1 µs
0.05
0.01
10 µs
10-1
100 µs
single pulse
150 µs
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2020-09-28
IAUC45N04S6N070H
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
200
180
30
28
26
4.5 V
10 V
160
24
22
20
18
16
14
12
10
8
5 V
140
7 V
120
5.5 V
5.5 V
100
80
60
40
20
0
5.0 V
7 V
6
4.5 V
10 V
4
2
0
0
1
2
3
0
20
40
60
80 100 120 140 160
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 22 A; VGS = 10 V
160
140
120
100
80
12
11
10
9
8
7
6
60
5
40
175 °C
4
25 °C
20
3
-55 °C
0
2
2.5
3
3.5
4
4.5
5
5.5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2020-09-28
IAUC45N04S6N070H
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
4
3.5
3
103
90 µA
2.5
Ciss
9 µA
Coss
2
1.5
1
102
0.5
0
Crss
101
0
10
20
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
102
10
25 °C
25 °C
175 °C
100 °C
150 °C
101
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2020-09-28
IAUC45N04S6N070H
13 Avalanche energy
14 Drain-source breakdown voltage
EAS = f(T j)
VBR(DSS) = f(T j); I D = 1 mA
44
100
80
4.5 A
42
40
38
60
40
9 A
20
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 22 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
8 V
Qg
32 V
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
2
4
6
8
10
Qgate [nC]
Rev. 1.0
page 7
2020-09-28
IAUC45N04S6N070H
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Packaging
Rev. 1.0
page 8
2020-09-28
IAUC45N04S6N070H
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2020
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2020-09-28
IAUC45N04S6N070H
Revision History
Version
Revision 1.0
Date
Changes
22.09.2020 Final Datasheet
Rev. 1.0
page 10
2020-09-28
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