IGC10R60DX1SA1 [INFINEON]
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 3.73 X 2.70 MM, DIE-2;
| 型号： | IGC10R60DX1SA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 3.73 X 2.70 MM, DIE-2 栅 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGC10R60D
TRENCHSTOPTM RC-Series for hard switching applications
IGBT chip with monolithically integrated diode in packages offering space saving advantage
Features:
TRENCHSTOPTM Reverse Conducting (RC) technology for
600V applications offering:
• Optimised VCEsat and VF for low conduction losses
• Smooth switching performance leading to low EMI levels
• Very tight parameter distribution
• Operating range of 1 to 20kHz
• Maximum junction temperature 175°C
• Short circuit capability of 5µs
• Best in class current versus package size performance
• Qualified according to JEDEC for target applications
• Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
Used for:
Motor drives
Discrete components and molded modules
Chip Type
VCE
600V 15A
ICn
Die Size
2.70 x 3.73 mm2
Package
sawn on foil
IGC10R60D
Mechanical Parameter
Raster size
2.70 x 3.73
Emitter pad size
Gate pad size
see chip drawing
see chip drawing
mm2
Area: total / active IGBT / active Diode
Thickness
10.071 / 5.544 / 1.317
70
µm
Wafer size
150
mm
Max.possible chips per wafer
Passivation frontside
Pad metal
1450
Photoimide
3200 nm AlSiCu
Ni Ag –system
Backside metal
Die bond
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Wire bond
Al, <500µm
Reject ink dot size
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
Recommended storage environment
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IMM PSD, Edition 2.0, 12.01.2010
IGC10R60D
TRENCHSTOPTM RC-Series for hard switching applications
Maximum Ratings
Parameter
Symbol
VCE
Value
Unit
Collector-Emitter voltage, Tj=25 °C
DC collector current, limited by Tj max
Pulsed collector current, tp limited by Tj max
Gate emitter voltage
600
1 )
V
A
IC
Ic, puls
VGE
45
±20
A
V
Junction temperature
Tvj, max
Tvj, op, max
tp, max
-40 .. +175
-40 .. +175
5
°C
°C
µs
Operating junction temperature
2 )
Short circuit data
V
GE
= 15V, VCC = 400V, T = 150°C
vj
Safe operating area IGBT 2 )3)
IC, max = 30A, VCE, max = 600V, Tvj,op ≤ Tvj,op,max
IF, max = 30A, VR, max = 600V,
Pmax =12 kW , Tvj,op ≤ Tvj,op,max
Safe operating area Diode 2 )
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterization
3 ) allowed number of short circuits: <1000; time between short circuits: >1s
Static Characteristics (tested on wafer), T =25 °C
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Diode Forward Voltage
V(BR)CES
VCE(sat)
VF
VGE=0V , IC= 0.2mA
VGE=15V, IC=15A
VGE=0V, IF=15A
600
1.65
1.7
5
2.1
2.1
5.7
40
V
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
VGE(th)
ICES
IC=0.25mA , VGE=VCE
VCE=600V , VGE=0V
VCE=0V , VGE=20V
4.3
µA
nA
Ω
IGES
100
RGint
0
Dynamic Characteristics (not subject to production test - verified by design / characterization), T =25 °C
j
Value
min. typ.
961
Parameter
Symbol
Conditions
CE=25V,
Unit
max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
V
V
GE=0V,
pF
53
33
f=1MHz
Edited by INFINEON Technologies, IFAG IMM PSD, Edition 2.0, 12.01.2010
IGC10R60D
TRENCHSTOPTM RC-Series for hard switching applications
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on package design and mounting
technology and can therefore not be specified for a bare die.
Further technical information about the performance of this chip in package t.b.d. is given exemplarily at
www.infineon.com/igbt. The chip qualification is independent of the qualification which is performed for the
Discretes.
Edited by INFINEON Technologies, IFAG IMM PSD, Edition 2.0, 12.01.2010
IGC10R60D
TRENCHSTOPTM RC-Series for hard switching applications
Chip Drawing
E
G
E = Emitter
G = Gate
Edited by INFINEON Technologies, IFAG IMM PSD, Edition 2.0, 12.01.2010
IGC10R60D
TRENCHSTOPTM RC-Series for hard switching applications
Chip Drawing active areas
Edited by INFINEON Technologies, IFAG IMM PSD, Edition 2.0, 12.01.2010
IGC10R60D
TRENCHSTOPTM RC-Series for hard switching applications
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
2.0
Release of final datasheet
12.01.2010
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Edited by INFINEON Technologies, IFAG IMM PSD, Edition 2.0, 12.01.2010
相关型号：
IGC10R60DX1SA2
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 3.73 X 2.70 MM, DIE-2
INFINEON
IGC114T170S8RH
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, 12.08 X 9.47 MM, DIE-5
INFINEON
©2020 ICPDF网 联系我们和版权申明