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IGC10R60DX1SA2 [INFINEON]

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 3.73 X 2.70 MM, DIE-2;
IGC10R60DX1SA2
型号: IGC10R60DX1SA2
厂家: Infineon    Infineon
描述:

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 3.73 X 2.70 MM, DIE-2

栅 功率控制 晶体管
文件: 总6页 (文件大小:131K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

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