首页 |元器件品牌

IHW40N135R5XKSA1 [INFINEON]

Insulated Gate Bipolar Transistor,;
IHW40N135R5XKSA1
型号： IHW40N135R5XKSA1
厂家： Infineon    Infineon
描述：

Insulated Gate Bipolar Transistor,

栅
文件： 总15页 (文件大小：1767K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
ReverseꢀConductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode  
ꢀ
C
E
Features:  
•ꢀPowerfulꢀmonolithicꢀbodyꢀdiodeꢀwithꢀlowꢀforwardꢀvoltage  
designedꢀforꢀsoftꢀcommutation  
•ꢀTRENCHSTOPTMꢀtechnologyꢀoffering:  
-ꢀveryꢀtightꢀparameterꢀdistribution  
G
-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior  
-ꢀlowꢀVCEsat  
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive  
temperatureꢀcoefficientꢀinꢀVCEsat  
•ꢀLowꢀEMI  
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogenꢀfreeꢀ(accordingꢀtoꢀIECꢀ61249-2-21)  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
Applications:  
•ꢀInductionꢀcooking  
•ꢀMicrowaveꢀovens  
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.65V 175°C  
Marking  
Package  
PG-TO247-3  
IHW40N135R5  
1350V  
40A  
H40PR5  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Datasheet  
2
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
1350  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
Tcꢀ=ꢀ100°C  
IC  
80.0  
40.0  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
Non repetitive peak collector current1)  
ICpuls  
ICSM  
120.0  
200  
A
A
Turn off safe operating area  
VCEꢀ≤ꢀ1350V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
120.0  
A
A
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
Tcꢀ=ꢀ100°C  
IF  
80.0  
40.0  
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
120.0  
A
V
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±25  
PowerꢀdissipationꢀTcꢀ=ꢀ25°C  
PowerꢀdissipationꢀTcꢀ=ꢀ100°C  
394.0  
197.0  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
-
-
-
-
-
-
0.38 K/W  
0.38 K/W  
40 K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs  
Datasheet  
3
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ125°C  
1350  
-
-
V
V
-
-
-
1.65 1.95  
1.95  
2.05  
-
-
Tvjꢀ=ꢀ175°C  
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ40.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ125°C  
Tvjꢀ=ꢀ175°C  
-
-
-
1.95 2.15  
Diode forward voltage  
VF  
V
2.30  
2.40  
-
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ1.00mA,ꢀVCEꢀ=ꢀVGE  
5.1  
5.8  
6.4  
V
VCEꢀ=ꢀ1350V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
100  
-
µA  
850  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A  
-
-
-
100  
-
nA  
S
30.0  
none  
Integrated gate resistor  
rG  
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
2360  
70  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
60  
VCCꢀ=ꢀ1080V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
305.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
410  
90  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,  
Lσꢀ=ꢀ175nH,ꢀCσꢀ=ꢀ40pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-off energy  
Eoff  
2.00  
mJ  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off energy, soft switching  
Eoff  
dv/dtꢀ=ꢀ200.0V/µs  
-
0.30  
-
mJ  
Datasheet  
4
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Turn-off delay time  
Fall time  
td(off)  
tf  
-
-
-
480  
220  
3.70  
-
-
-
ns  
ns  
Tvjꢀ=ꢀ175°C,  
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,  
Lσꢀ=ꢀ175nH,ꢀCσꢀ=ꢀ40pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-off energy  
Eoff  
mJ  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off energy, soft switching  
Eoff  
dv/dtꢀ=ꢀ200.0V/µs  
-
0.85  
-
mJ  
Datasheet  
5
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
400  
360  
320  
280  
240  
200  
160  
120  
80  
100  
not for linear use  
10  
1
40  
0.1  
0
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
175  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea  
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V;ꢀtp=1µs)  
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
(Tvj≤175°C)  
80  
60  
40  
20  
0
120  
100  
VGE=20V  
17V  
80  
15V  
13V  
11V  
9V  
60  
40  
20  
0
7V  
5V  
25  
50  
75  
100  
125  
150  
175  
0
1
2
3
4
5
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
(VGE≥15V,ꢀTvj≤175°C)  
Datasheet  
6
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
120  
120  
100  
80  
60  
40  
20  
0
VGE=20V  
Tvj = 25°C  
Tvj =175°C  
17V  
100  
15V  
13V  
11V  
80  
9V  
7V  
60  
5V  
40  
20  
0
0
1
2
3
4
5
0
2
4
6
8
10  
12  
14  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Figure 5. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
Figure 6. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
3.5  
IC = 20A  
IC = 40A  
IC = 80A  
td(off)  
tf  
1000  
100  
10  
3.0  
2.5  
2.0  
1.5  
1.0  
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
70  
80  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
collectorꢀcurrent  
(VGE=15V)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀrG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
7
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
1E+4  
1000  
100  
10  
td(off)  
tf  
td(off)  
tf  
1000  
100  
10  
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
resistor  
junctionꢀtemperature  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀIC=40A,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,  
IC=40A,ꢀrG=10Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
7.0  
6.2  
5.4  
4.6  
3.8  
3.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
Eoff  
typ.  
min.  
max.  
25  
50  
75  
100  
125  
150  
175  
0
10  
20  
30  
40  
50  
60  
70  
80  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
ofꢀjunctionꢀtemperature  
functionꢀofꢀcollectorꢀcurrent  
(IC=1mA)  
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀRG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
8
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
6.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
Eoff  
Eoff  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,  
IC=40A,ꢀrG=10Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,  
VGE=0/15V,ꢀIC=40A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
5.5  
2.0  
Eoff  
Tvj = 25°C  
Tvj = 175°C  
1.8  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
400  
500  
600  
700  
800  
900  
1000  
0
10  
20  
30  
40  
50  
60  
70  
80  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=0/15V,  
IC=40A,ꢀrG=10Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 16. Typicalꢀturnꢀoffꢀswitchingꢀenergyꢀlossꢀfor  
softꢀswitching  
(inductiveꢀload,VCE=600V,ꢀVGE=0/15V,  
RG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)  
Datasheet  
9
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
16  
1E+4  
1000  
100  
VCCꢀ=ꢀ270V  
VCCꢀ=ꢀ1080V  
Cies  
Coes  
Cres  
14  
12  
10  
8
6
4
2
0
10  
0
62  
124  
186  
248  
310  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 17. Typicalꢀgateꢀcharge  
(IC=40A)  
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
1
1
D = 0.5  
0.1  
0.1  
0.2  
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.1  
0.05  
0.02  
single pulse  
0.01  
0.01  
0.01  
single pulse  
i:  
1
2
3
4
i:  
1
2
3
4
ri[K/W]: 6.6E-3 0.108909 0.154872 0.109704  
τi[s]: 1.1E-5 2.9E-4 3.5E-3 0.02156  
ri[K/W]: 0.03881 0.08583 0.11772 0.13766  
τi[s]:  
7.0E-5  
1.0E-4  
2.7E-3  
0.02792  
0.001  
1E-6  
0.001  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]]  
Figure 19. IGBTꢀtransientꢀthermalꢀresistance  
(D=tp/T)  
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
Datasheet  
10  
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
120  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
Tvj = 25°C  
Tvj = 175°C  
IF = 20A  
IF = 40A  
IF = 80A  
100  
80  
60  
40  
20  
0
0
1
2
3
4
5
6
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 21. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 22. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
Datasheet  
11  
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
Package Drawing PG-TO247-3  
Datasheet  
12  
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
13  
Vꢀ2.3  
2019-09-20  
IHW40N135R5  
ResonantꢀSwitchingꢀSeries  
RevisionꢀHistory  
IHW40N135R5  
Revision:ꢀ2019-09-20,ꢀRev.ꢀ2.3  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2.2  
2.3  
2018-04-17 FINAL DATASHEET  
2018-09-17 Added thermal network on Fig.19 & 20  
2019-09-20 additional parameter in maximum ratings table: non repetitive peak collector current  
Datasheet  
14  
Vꢀ2.3  
2019-09-20  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2019.  
AllꢀRightsꢀReserved.  
ImportantꢀNotice  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics  
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand  
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird  
party.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof  
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof  
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe  
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest  
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).  
PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive  
ElectronicsꢀCouncil.  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion  
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.  
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized  
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa  
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.  

相关型号：

IHW40N60R

 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
INFINEON

IHW40N60RF

 powerful monolithic body diode with low forward voltage
INFINEON

IHW40N60RFKSA1

 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
INFINEON

IHW40N60T

 Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
INFINEON

IHW40N60T_08

 Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
INFINEON

IHW40N65R5

 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
INFINEON

IHW40N65R5XKSA1

 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
INFINEON

IHW40N65R6

 IGBT RC Soft Switching
INFINEON

IHW40T120

 IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
INFINEON

IHW40T120XK

 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
INFINEON

IHW40T120_08

 Soft Switching Series
INFINEON

IHW40T60

 Low Loss DuoPack : IGBT in TrenchStop-technology
INFINEON
©2020 ICPDF网 联系我们和版权申明