IHW40N60RF [INFINEON]
powerful monolithic body diode with low forward voltage; 功能强大的单片体二极管具有低正向电压
| 型号： | IHW40N60RF |
| 厂家： | 
Infineon |
| 描述： | powerful monolithic body diode with low forward voltage |
| 文件： | 总12页 (文件大小：794K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IHW40N60RF
IH-series
Reverse conducting IGBT
C
Features:
• Powerful monolithic body diode with low forward voltage
designed for soft commutation only
• TrenchStop® technology applications offers:
- very tight parameter distribution
G
E
- high ruggedness, temperature stable behavior
- low VCEsat
• Low EMI
• Qualified according to JEDEC J-STD-020
and JESD-022 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
• Inductive cooking
• Soft switching applications
Type
V†Š
I†
V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà
Marking
Package
IHW40N60RF
600V
40A
1.85V
175°C
H40RF60
PG-TO247-3
Maximum ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V†Š
600
V
DC collector current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
I†
80.0
40.0
A
Pulsed collector current, tÔ limited by TÝÎÑÈà
I†ÔÛÐÙ
-
120.0
120.0
A
A
Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C
Diode forward current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
IŒ
80.0
40.0
A
Diode pulsed current, tÔ limited by TÝÎÑÈà
Gate-emitter voltage
IŒÔÛÐÙ
V•Š
120.0
±20
A
V
Power dissipation T† = 25°C
Power dissipation T† = 100°C
305.0
152.5
PÚÓÚ
W
Operating junction temperature
Storage temperature
TÝÎ
-40...+175
-55...+175
°C
°C
TÙÚÃ
Soldering temperature,
wavesoldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Rev. 2.3 2010-03-02
1
IHW40N60RF
IH-series
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
RÚÌñÎ-Êò
RÚÌñÎ-Êò
RÚÌñÎ-Èò
0.49
0.49
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Static Characteristic
Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 0.50mA
600
-
-
V
V
V•Š = 15.0V, I† = 40.0A
TÝÎ = 25°C
TÝÎ = 175°C
Collector-emitter saturation voltage V†ŠÙÈÚ
-
-
1.85 2.40
2.30
-
V•Š = 0V, IŒ = 40.0A
TÝÎ = 25°C
TÝÎ = 175°C
Diode forward voltage
VŒ
-
-
1.75 2.20
2.00
V
V
Gate-emitter threshold voltage
V•ŠñÚÌò
I† = 0.58mA, V†Š = V•Š
4.1
4.9
5.7
V†Š = 600V, V•Š = 0V
TÝÎ = 25°C
TÝÎ = 175°C
Zero gate voltage collector current I†Š»
-
-
-
-
40.0 µA
1000.0
Gate-emitter leakage current
Transconductance
I•Š»
gËÙ
V†Š = 0V, V•Š = 20V
V†Š = 20V, I† = 40.0A
-
-
-
100
-
nA
S
24.0
none
Integrated gate resistor
r•
Â
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Dynamic Characteristic
Input capacitance
CÍþÙ
-
-
-
2400
88
-
-
-
Output capacitance
CÓþÙ
CØþÙ
V†Š = 25V, V•Š = 0V, f = 1MHz
pF
Reverse transfer capacitance
68
V†† = 480V, I† = 40.0A,
V•Š = 15V
Gate charge
Q•
LŠ
-
-
220.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ú 1.0s
I†ñ»†ò
V•Š = 15.0V, V†† ù 400V
-
-
A
Rev. 2.3 2010-03-02
2
IHW40N60RF
IH-series
Switching Characteristic, Inductive Load, at TÝÎ = 25°C
Value
Unit
Parameter
Symbol Conditions
min.
typ. max.
IGBT Characteristic
Turn-off delay time
Fall time
tÁñÓËËò
tË
TÝÎ = 25°C,
V†† = 400V, I† = 40.0A,
V•Š = 0.0/15.0V,
r• = 5.6Â, Lÿ = 90nH,
Cÿ = 67pF
-
-
-
175
14
-
-
-
ns
ns
Turn-off energy
EÓËË
0.56
mJ
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode reverse recovery.
Switching Characteristic, Inductive Load, at TÝÎ = 125°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-off delay time
Fall time
tÁñÓËËò
tË
TÝÎ = 125°C,
V†† = 400V, I† = 40.0A,
V•Š = 0.0/15.0V,
r• = 5.6Â, Lÿ = 90nH,
Cÿ = 67pF
-
-
-
205
23
-
-
-
ns
ns
Turn-off energy
EÓËË
0.79
mJ
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode reverse recovery.
Rev. 2.3 2010-03-02
3
IHW40N60RF
IH-series
140
120
100
80
100
10
1
tÔ=1µs
10µs
T†=80°
50µs
T†=110°
100µs
200µs
500µs
DC
60
40
I
I
20
0
0.1
1
10
f, SWITCHING FREQUENCY [kHz]
100
1000
1
10
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
100
1000
Figure 1. Collector current as a function of switching
frequency
Figure 2. Forward bias safe operating area
(D=0, T†=25°C, TÝÎù175°C; V•Š=15V)
(TÝÎù175°C, D=0.5, V†Š=400V,
V•Š=15/0V, r•=5.6Â)
350
300
250
200
150
100
50
80
60
40
20
0
I
P
0
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
Figure 3. Power dissipation as a function of case
temperature
(TÝÎù175°C)
Figure 4. Collector current as a function of case
temperature
(V•Šú15V, TÝÎù175°C)
Rev. 2.3 2010-03-02
4
IHW40N60RF
IH-series
120
100
80
60
40
20
0
120
100
80
60
40
20
0
V•Š=20V
17V
15V
13V
11V
9V
V•Š=20V
17V
15V
13V
11V
9V
7V
7V
I
I
0
1
2
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
3
4
5
0
1
2
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
3
4
5
Figure 5. Typical output characteristic
(TÝÎ=25°C)
Figure 6. Typical output characteristic
(TÝÎ=175°C)
120
4.0
TÎ=25°C
TÎ=175°C
I†=20A
I†=40A
I†=80A
100
80
60
40
20
0
3.5
3.0
2.5
2.0
1.5
1.0
I
V
4
5
6
V•Š, GATE-EMITTER VOLTAGE [V]
7
8
9
10
11
12
25
50
TÝÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
Figure 7. Typical transfer characteristic
(V†Š=20V)
Figure 8. Typical collector-emitter saturation voltage
as a function of junction temperature
(V•Š=15V)
Rev. 2.3 2010-03-02
5
IHW40N60RF
IH-series
1000
100
10
tÁñÓËËò
tË
tÁñÓËËò
tË
1000
100
10
t
t
0
10
20
I†, COLLECTOR CURRENT [A]
30
40
50
60
70
80
0
10
20
r•, GATE RESISTOR [Â]
30
40
50
Figure 9. Typical switching times as a function of
collector current
Figure 10. Typical switching times as a function of
gate resistor
(inductive load, TÝÎ=175°C, V†Š=400V,
V•Š=15/0V, r•=5.6Â, Dynamic test circuit
in Figure E)
(inductive load, TÝÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=40A,
Dynamic test circuit in Figure E)
1000
7
tÁñÓËËò
tË
typ.
min.
max.
6
5
4
3
2
1
100
10
1
t
V
25
50
75
TÝÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
0
25
50
75
TÝÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
Figure 11. Typical switching times as a function of
junction temperature
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(I†=0.58mA)
(inductive load, V†Š=400V, V•Š=15/0V,
I†=40A, r•=5.6Â,Dynamic test circuit in
Figure E)
Rev. 2.3 2010-03-02
6
IHW40N60RF
IH-series
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
EÓËË
EÓËË
E
E
0
10
20
I†, COLLECTOR CURRENT [A]
30
40
50
60
70
80
0
10
20
r•, GATE RESISTOR [Â]
30
40
50
Figure 13. Typical switching energy losses as a
function of collector current
Figure 14. Typical switching energy losses as a
function of gate resistor
(inductive load, TÝÎ=175°C, V†Š=400V,
V•Š=15/0V, r•=5.6Â,Dynamic test circuit
in Figure E)
(inductive load, TÝÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=40A, Dynamic test circuit
in Figure E)
0.80
1.00
0.75
EÓËË
EÓËË
0.75
0.70
0.65
0.60
0.55
0.50
0.50
0.25
0.00
E
E
25
50
75
100
125
150
TÝÎ, JUNCTION TEMPERATURE [°C]
175
200
300
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
400
Figure 15. Typical switching energy losses as a
function of junction temperature
(inductive load, V†Š=400V, V•Š=15/0V,
I†=40A, r•=5.6Â,Dynamic test circuit in
Figure E)
Figure 16. Typical switching energy losses as a
function of collector emitter voltage
(inductive load, TÝÎ=175°C, V•Š=15/0V,
I†=40A, r•=5.6Â,Dynamic test circuit in
Figure E)
Rev. 2.3 2010-03-02
7
IHW40N60RF
IH-series
16
14
12
10
8
120V
480V
CÍÙÙ
CÓÙÙ
CØÙÙ
1000
100
10
6
C
4
V
2
0
0
50
100
Q•Š, GATE CHARGE [nC]
150
200
250
0
10
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
20
30
Figure 17. Typical gate charge
(I†=40A)
Figure 18. Typical capacitance as a function of
collector-emitter voltage
(V•Š=0V, f=1MHz)
1
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
rÍ[K/W]: 0.0655 0.1301 0.1899
1
2
3
4
i:
rÍ[K/W]: 0.0655 0.1301 0.1899
1
2
3
4
0.1045
1.4E-4 1.0E-3 0.01054274 0.07949796
0.1045
1.4E-4 1.0E-3 0.01054274 0.07949796
Z
Z
Í[s]:
Í[s]:
τ
τ
0.001
1E-6
0.001
1E-6
1E-5
1E-4
0.001
tÔ, PULSE WIDTH [s]
0.01
0.1
1
1E-5
1E-4
0.001
tÔ, PULSE WIDTH [s]
0.01
0.1
1
Figure 19. IGBT transient thermal impedance
(D=tÔ/T)
Figure 20. Diode transient thermal impedance as a
function of pulse width
(D=tÔ/T)
Rev. 2.3 2010-03-02
8
IHW40N60RF
IH-series
120
100
80
60
40
20
0
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
TÎ=25°C
TÎ=175°C
IŒ=20A
IŒ=40A
IŒ=80A
I
V
0
1 2
VŒ, FORWARD VOLTAGE [V]
3
4
25
50 100
TÝÎ, JUNCTION TEMPERATURE [°C]
75
125
150
175
Figure 21. Typical diode forward current as a
function of forward voltage
Figure 22. Typical diode forward voltage as a
function of junction temperature
Rev. 2.3 2010-03-02
9
IHW40N60RF
IH-series
PG-TO247-3
Rev. 2.3 2010-03-02
10
IHW40N60RF
IH-series
Rev. 2.3 2010-03-02
11
IHW40N60RF
IH-series
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support
devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of
that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Rev. 2.3 2010-03-02
12
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