IKFW40N65ES5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IKFW40N65ES5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总15页 (文件大小：1521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀcurrent
ratedꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiodeꢀinꢀfullyꢀisolatedꢀpackage
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀS5ꢀtechnologyꢀoffering
•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching
•ꢀVeryꢀLowꢀVCEsat,ꢀ1.35Vꢀatꢀnominalꢀcurrent
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
G
E
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀRAPIDꢀ1ꢀfastꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀResonantꢀconverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
Fully isolated package TO-247
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.35V 175°C
Marking
Package
IKFW40N65ES5
650V
30A
K40EES5
PG-HSIP247-3-2
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
www.infineon.com
2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Datasheet
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IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°C
Thꢀ=ꢀ65°C
Thꢀ=ꢀ65°C
60.0
48.0
IC
A
52.01)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
120.0
120.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°C
Thꢀ=ꢀ65°C
IF
56.0
43.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
120.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀThꢀ=ꢀ25°C
PowerꢀdissipationꢀThꢀ=ꢀ65°C
106.0
78.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min2)
M
Nm
V
Visol
2500
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,3)
junction - heatsink
Diode thermal resistance,3)
junction - heatsink
Rth(j-h)
Rth(j-h)
Rth(j-a)
-
-
-
1.20 1.41 K/W
1.37 1.51 K/W
Thermal resistance
junction - ambient
-
65 K/W
1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier
insulator
2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
3) At force on body F = 500N, Ta = 25ºC
Datasheet
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IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ30.0A
650
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.35 1.70
1.60
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ30.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.45 1.70
V
V
1.39
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.30mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50
-
µA
1400
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ30.0A
-
-
-
100
-
nA
S
42.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1800
55
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
7
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
70.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
17
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ13.0Ω,ꢀRG(off)ꢀ=ꢀ13.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
124
30
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.56
0.32
0.88
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
75
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ1200A/µs
Qrr
0.83
18.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-900
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
17
13
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ13.0Ω,ꢀRG(off)ꢀ=ꢀ13.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
149
55
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.77
0.53
1.30
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
110
1.75
26.5
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1000
-
A/µs
Datasheet
5
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2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
120
100
80
60
40
20
0
60
50
40
30
20
10
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
90
90
VGE = 20V
VGE = 20V
18V
15V
12V
10V
8V
18V
15V
12V
10V
8V
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
7V
7V
6V
6V
5V
5V
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Datasheet
6
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2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
90
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tvj = 25°C
Tvj = 150°C
IC = 15A
IC = 30A
IC = 45A
80
70
60
50
40
30
20
10
0
2
3
4
5
6
7
8
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=30A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
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2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
1000
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
min.
max.
100
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=30A,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamicꢀtest
circuit in Figure E)
(IC=0.3mA)
5.0
2.5
Eoff
Eon
Ets
Eoff
Eon
Ets
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=150/V,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamic
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=30A,ꢀdynamicꢀtestꢀcircuitꢀin
test circuit in Figure E)
Figure E)
Datasheet
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2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
1.75
1.75
1.50
1.25
1.00
0.75
0.50
0.25
Eoff
Eon
Ets
Eoff
Eon
Ets
1.50
1.25
1.00
0.75
0.50
0.25
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=30A,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamicꢀtest
circuit in Figure E)
IC=30A,ꢀRGon=13Ω,ꢀRGoff=13Ω,ꢀdynamicꢀtest
circuit in Figure E)
16
14
12
10
8
1E+4
1000
100
10
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Cies
Coes
Cres
6
4
2
0
1
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=30A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
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IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
1
1
D = 0.5
D = 0.5
0.2
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
ri[K/W]: 6.4E-3 0.221235 0.28266 0.2373
τi[s]: 2.6E-5 2.9E-4 2.7E-3 0.022781 0.287773 1.293153 18.6881
1
2
3
4
5
6
7
i:
1
2
3
4
5
6
7
0.32529 0.194565 0.016527
ri[K/W]: 0.202274 0.337235 0.289542 0.199229 0.422136 0.046667 9.6E-3
τi[s]: 2.4E-4 1.4E-3 8.6E-3 0.071422 0.525208 3.996801 20.96846
0.001
1E-6 1E-5 1E-4 0.001 0.01
0.001
1E-6 1E-5 1E-4 0.001 0.01
0.1
1
10
0.1
1
10
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
200
2.00
Tvj = 25°C, IF = 30A
Tvj = 150°C, IF = 30A
Tvj = 25°C, IF = 30A
Tvj = 150°C, IF = 30A
175
150
125
100
75
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
50
25
0
600
800 1000 1200 1400 1600 1800 2000
600
800 1000 1200 1400 1600 1800 2000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
10
Vꢀ2.1
2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
40
0
-200
Tvj = 25°C, IF = 30A
Tvj = 150°C, IF = 30A
Tvj = 25°C, IF = 30A
Tvj = 150°C, IF = 30A
35
30
25
20
15
10
5
-400
-600
-800
-1000
-1200
-1400
-1600
-1800
0
600
800 1000 1200 1400 1600 1800 2000
600
800 1000 1200 1400 1600 1800 2000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
90
2.50
Tvj = 25°C
Tvj = 150°C
IF = 15A
IF = 30A
80
IF = 45A
2.25
70
60
50
40
30
20
10
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
11
Vꢀ2.1
2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
PG-HSIP247-3-2
MILLIMETERS
MILLIMETERS
DIMENSIONS
DIMENSIONS
MIN.
-
MAX.
5.18
4.90
2.66
0.28
1.50
0.51
1.90
MIN.
MAX.
A
A1
A2
A3
A4
A5
A6
A7
b
e
5.44
4.70
2.16
0.20
1.30
0.31
1.70
E
15.70
13.68
15.90
13.88
E1
E2
E3
E4
E5
E6
L
DOCUMENT NO.
Z8B00195711
(6.00)
3.24
4.39
3.44
4.59
REVISION
01
(1.45)
(0.25)
0.76
18.01
2.26
1.50
3.50
5.70
6.06
0.96
18.21
2.46
1.70
3.70
5.90
6.26
SCALE 3:1
1.10
1.30
0 1 2 3 4 5 6 7 8mm
b1
b2
b3
c
(2.88)
(1.60)
L1
L2
P
-
0.15
0.70
EUROPEAN PROJECTION
0.50
22.70
16.96
2.34
-
P1
Q
D
22.90
17.16
2.54
D1
D2
D3
D4
0.30
ISSUE DATE
28.06.2019
4.35
4.55
Datasheet
12
Vꢀ2.1
2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
13
Vꢀ2.1
2020-09-17
IKFW40N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
RevisionꢀHistory
IKFW40N65ES5
Revision:ꢀ2020-09-17,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2020-09-17 Final Data Sheet
Datasheet
14
Vꢀ2.1
2020-09-17
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相关型号：
IKI04N60TXKSA1
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
INFINEON
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