IKZ50N65EH5 [INFINEON]
IGBT TRENCHSTOP™ 5;![IKZ50N65EH5](http://pdffile.icpdf.com/pdf2/p00363/img/icpdf/IKZ50N65EH5_2224659_icpdf.jpg)
型号: | IKZ50N65EH5 |
厂家: | ![]() |
描述: | IGBT TRENCHSTOP™ 5 双极性晶体管 |
文件: | 总16页 (文件大小:2181K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IGBT
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
IKZ50N65EH5
650VꢀDuoPackꢀIGBTꢀandꢀdiode
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀUltraꢀlowꢀlossꢀswitchingꢀthanksꢀtoꢀKelvinꢀemitterꢀpinꢀin
combinationꢀwithꢀTRENCHSTOPTMꢀ5
•ꢀBest-in-classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
•ꢀSolarꢀstringꢀinverters
Packageꢀpinꢀdefinition:
•ꢀPinꢀCꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀEꢀ-ꢀemitter
•ꢀPinꢀKꢀ-ꢀKelvinꢀemitter
•ꢀPinꢀGꢀ-ꢀgate
Pleaseꢀnote:ꢀTheꢀemitterꢀandꢀKelvinꢀemitterꢀpinsꢀareꢀnot
exchangeable.ꢀTheirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
Package
IKZ50N65EH5
650V
50A
K50EEH5
PG-TO247-4
2
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
85.0
54.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
200.0
200.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
95.0
75.0
A
1)
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
200.0
A
V
Gate-emitter voltage
±20
±30
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
273.0
136.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.55
0.63
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) Defined by design. Not subject to production test.
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ100°C
650
-
-
V
V
-
-
-
1.65 2.10
1.82
1.90
-
-
Tvjꢀ=ꢀ150°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ100°C
Tvjꢀ=ꢀ150°C
-
-
-
1.35 1.70
Diode forward voltage
VF
V
V
1.33
1.30
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50.0 µA
-
2500.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A
-
-
-
100
-
nA
S
65.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
3100
90
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
11
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
109.0
13.0
-
-
nC
nH
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
7
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ20.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
250
21
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.41
0.19
0.60
mJ
mJ
mJ
Turn-off energy
Total switching energy
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
53
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
diF/dtꢀ=ꢀ1500A/µs
Qrr
0.82
24.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1840
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
8
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ20.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ25pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
292
19
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.67
0.27
0.94
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
82
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
Qrr
1.83
33.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1560
-
A/µs
6
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
275
250
225
200
175
150
125
100
75
100
10
1
50
25
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs,
ICmaxꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto
production test)
temperature
(Tvj≤175°C)
90
80
70
60
50
40
30
20
10
0
150
VGE = 20V
135
18V
15V
120
12V
105
10V
90
75
60
45
30
15
0
8V
7V
6V
5V
25
50
75
100
125
150
175
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
150
135
120
105
90
150
VGE = 20V
18V
15V
12V
10V
8V
Tvj = 25°C
Tvj = 175°C
135
120
105
90
75
60
45
30
15
0
7V
75
6V
60
5V
45
30
15
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
2
3
4
5
6
7
8
9
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.25
1000
100
10
IC = 12.5A
IC = 25A
IC = 50A
td(off)
tf
td(on)
tr
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=12Ω,ꢀRG(off)=20Ω,ꢀdynamic
test circuit in Figure E)
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1E+4
1000
100
10
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
1
5.0
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=25A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=25A,ꢀRG(on)=12Ω,ꢀRG(off)=20Ω,ꢀdynamic
test circuit in Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
typ.
min.
max.
Eoff
Eon
Ets
25
50
75
100
125
150
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0.5mA)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=12Ω,ꢀRG(off)=20Ω,
dynamic test circuit in Figure E)
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IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
Eoff
Eon
Ets
Eoff
Eon
Ets
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5.0
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=25A,ꢀRG(on)=12Ω,ꢀRG(off)=20Ω,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=25A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
1.0
16
Eoff
Eon
Ets
VCE = 130V
VCE = 520V
14
12
10
8
0.8
0.6
0.4
0.2
0.0
6
4
2
0
200
250
300
350
400
0
20
40
60
80
100
120
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=25A,ꢀRG(on)=12Ω,ꢀRG(off)=20Ω,ꢀdynamic
test circuit in Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=50A)
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Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1E+4
1000
100
10
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
Cies
Coes
Cres
i:
1
2
3
4
5
6
ri[K/W]: 9.5E-3 0.125039 0.132857 0.256654 0.021551 2.1E-3
τi[s]:
2.5E-5 2.3E-4
2.1E-3
0.012197 0.104256 1.840158
1
0.001
1E-7
0
5
10
15
20
25
30
1E-6
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
100
Tvj = 25°C, IF = 25A
Tvj = 150°C, IF = 25A
90
80
70
60
50
40
30
20
10
0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 0.013431 0.146325 0.159015 0.278506 0.025538 2.1E-3
τi[s]:
2.6E-5
2.1E-4
2.0E-3
0.01147 0.091987 1.834403
0.001
1E-7
1E-6
1E-5
1E-4
0.001
0.01
0.1
1000 1500 2000 2500 3000 3500 4000 4500
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
11
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
80
Tvj = 25°C, IF = 25A
Tvj = 150°C, IF = 25A
Tvj = 25°C, IF = 25A
Tvj = 150°C, IF = 25A
70
60
50
40
30
20
10
0
1000 1500 2000 2500 3000 3500 4000 4500
1000 1500 2000 2500 3000 3500 4000 4500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
150
Tvj = 25°C, IF = 25A
Tvj = 25°C
Tvj = 150°C, IF = 25A
Tvj = 175°C
135
-1
120
105
90
75
60
45
30
15
0
-2
-3
-4
-5
-6
-7
-8
-9
1000 1500 2000 2500 3000 3500 4000 4500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
12
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
1.500
1.375
1.250
1.125
1.000
0.875
0.750
0.625
0.500
IF = 12.5A
IF = 25A
IF = 50A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
14
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
Highꢀspeedꢀseriesꢀfifthꢀgeneration
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
parasitic
relief
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
15
Rev.ꢀ2.1,ꢀꢀ2014-10-31
IKZ50N65EH5
High speed series fifth generation
Revision History
IKZ50N65EH5
Revision: 2014-10-31, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2014-10-17 Preliminary data sheet
2014-10-31 Final data sheet
1.1
2.1
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© 2014 Infineon Technologies AG
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16
Rev. 2.1, 2014-10-31
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