IPAN60R125PFD7S [INFINEON]
600V CoolMOS™ PFD7 超结 MOSFET (IPAN60R125PFD7S) 补充了CoolMOS™ 7 系列产品,可用于消费类应用。采用 TO-220 FullPAK 窄引脚封装的 IPAN60R125PFD7S 具有 125mOhm 的 RDS(on) ,降低了开关损耗。该产品配备了快速体二极管,可确保器件坚固耐用,进而为客户减少物料清单(BOM)。;型号: | IPAN60R125PFD7S |
厂家: | Infineon |
描述: | 600V CoolMOS™ PFD7 超结 MOSFET (IPAN60R125PFD7S) 补充了CoolMOS™ 7 系列产品,可用于消费类应用。采用 TO-220 FullPAK 窄引脚封装的 IPAN60R125PFD7S 具有 125mOhm 的 RDS(on) ,降低了开关损耗。该产品配备了快速体二极管,可确保器件坚固耐用,进而为客户减少物料清单(BOM)。 开关 二极管 |
文件: | 总14页 (文件大小:1130K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPAN60R125PFD7S
MOSFET
PG-TOꢀ220ꢀFP
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
motorꢀdrive,ꢀlighting,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀLowꢀswitchingꢀlossesꢀEoss,ꢀexcellentꢀthermalꢀbehavior
•ꢀFastꢀbodyꢀdiode
*1
Gate
Pin 1
•ꢀWideꢀrangeꢀportfolioꢀofꢀRDS(on)ꢀandꢀpackageꢀvariations
Source
Pin 3
*1: Internal body diode
Benefits
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀExcellentꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign
Potentialꢀapplications
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
650
125
36
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
66
Eoss @ 400V
Body diode diF/dt
ESD Class (HBM)
4.1
µJ
1300
2
A/µs
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
PG-TO 220 FullPAK -
Narrow Lead
IPAN60R125PFD7S
60S125D7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
25
16
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
66
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
78
mJ
mJ
A
ID=4.4A; VDD=50V; see table 10
-
0.39
4.4
120
20
ID=4.4A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
32
W
°C
°C
TC=25°C
Storage temperature
-40
-40
-
150
150
50
-
-
Operating junction temperature
Mounting torque
-
Ncm M2.5 screws
Continuous diode forward current1)
Diode pulse current2)
IS
-
25
A
A
TC=25°C
TC=25°C
IS,pulse
-
66
VDS=0...400V,ꢀISD<=18A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
VDS=0...400V,ꢀISD<=18A,ꢀTj=25°Cꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
2500
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO220 equivalent
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.92
80
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.39mA
-
-
-
8
1
37
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.104 0.125
0.235
VGS=10V,ꢀID=7.8A,ꢀTj=25°C
VGS=10V,ꢀID=7.8A,ꢀTj=150°C
RDS(on)
RG
-
-
8.8
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1503
28
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
51
520
26
13
69
6
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=10V,ꢀID=7.8A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=10V,ꢀID=7.8A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=10V,ꢀID=7.8A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=10V,ꢀID=7.8A,
RG=5.3Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V
Qgd
12
Qg
36
Gate plateau voltage
Vplateau
5.6
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=7.8A,ꢀTj=25°C
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
100
0.45
7.9
150
0.90
-
ns
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
35
102
1 µs
10 µs
30
25
20
15
10
5
101
100
100 µs
1 ms
10-1
10-2
10-3
10-4
10-5
10 ms
DC
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
1 µs
10 µs
101
100
100 µs
0.5
100
0.2
1 ms
10-1
10-2
10-3
10-4
10-5
0.1
10 ms
0.05
0.02
10-1
DC
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
100
60
20 V
90
80
70
60
50
40
30
20
10
0
20 V
10 V
50
40
30
20
10
0
10 V
8 V
8 V
7 V
7 V
6 V
5.5 V
5 V
6 V
5.5 V
5 V
4.5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.400
2.5
7 V
5.5 V
6 V
6.5 V
0.360
0.320
0.280
0.240
0.200
10 V
2.0
1.5
1.0
0.5
20 V
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=7.8ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
100
10
90
9
8
7
6
5
4
3
2
1
0
25 °C
80
70
60
400 V
120 V
150 °C
50
40
30
20
10
0
0
2
4
6
8
10
12
0
10
20
30
40
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=7.8ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
80
70
60
50
40
30
20
10
0
101
125 °C
25 °C
100
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=4.4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
105
104
103
102
101
100
10-1
660
630
600
570
540
Ciss
Coss
Crss
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
6
5
4
3
2
1
0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
DOCUMENT NO.
Z8B00188573
MIN.
4.60
2.60
2.47
0.56
1.01
0.46
15.90
9.58
10.40
MAX.
4.80
2.80
2.67
0.69
1.15
0.59
16.10
9.78
10.60
A
A1
A2
b
REVISION
02
SCALE 5:1
b1
c
5mm
0
1
2
3
4
D
D1
E
EUROPEAN PROJECTION
e
2.54
3
N
L
13.45
1.70
3.00
3.25
13.75
1.91
3.20
3.45
L1
øP
Q
ISSUE DATE
21.03.2019
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAKꢀ-ꢀNarrowꢀLead,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀPFD7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀPFD7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀPFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2019-11-29
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPAN60R125PFD7S
RevisionꢀHistory
IPAN60R125PFD7S
Revision:ꢀ2019-11-29,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2.1
2019-04-09
2019-11-29
Modified current Id and Is ratings
Trademarks
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2019-11-29
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