首页 |元器件品牌

IPB025N08N3 G [INFINEON]

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。;
IPB025N08N3 G
型号： IPB025N08N3 G
厂家： Infineon    Infineon
描述：

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。

通信 服务器
文件： 总10页 (文件大小：841K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IPB025N08N3ꢀG  
MOSFET  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
D²PAK  
Features  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication  
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Drain  
Pin 2, Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
80  
V
Gate  
Pin 1  
RDS(on),max  
ID  
2.5  
mΩ  
A
Source  
Pin 3  
120  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPB025N08N3 G  
PG-TO 263  
025N08N  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Final Data Sheet  
2
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
120  
120  
TC=25ꢀ°C1)  
TC=100ꢀ°C  
Continuous drain current  
ID  
A
Pulsed drain current1)  
Avalanche energy, single pulse  
Gate source voltage  
ID,pulse  
EAS  
-
-
-
-
-
480  
A
TC=25ꢀ°C  
-
1430 mJ  
ID=100ꢀA,ꢀRGS=25ꢀΩ  
VGS  
Ptot  
-20  
-
20  
V
-
Power dissipation  
300  
W
TC=25ꢀ°C  
IEC climatic category;  
DIN IEC 68-1: 55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.5  
K/W  
K/W  
-
-
Thermal resistance, junction - ambient,  
minimal footprint  
-
-
-
-
62  
40  
Thermal resistance, junction - ambient,  
6 cm2 cooling area2)  
RthJA  
K/W  
-
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
80  
2
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.8  
3.5  
VDS=VGS,ꢀID=270ꢀµA  
-
-
0.1  
10  
1
100  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
1
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
2.0  
2.4  
2.5  
3.9  
VGS=10ꢀV,ꢀID=100ꢀA  
VGS=6ꢀV,ꢀID=50ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
-
2.7  
-
-
Ω
-
Transconductance  
94  
187  
S
|VDS|>2|ID|RDS(on)max,ꢀID=100ꢀA  
1) See Diagram 3  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
Final Data Sheet  
3
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
10700 14200 pF  
2890 3840 pF  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
100  
28  
150  
-
pF  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
73  
86  
33  
-
-
-
ns  
ns  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
50  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
67  
Gate to source charge  
Gate to drain charge  
Switching charge  
Gate charge total  
Gate plateau voltage  
Output charge  
Qgs  
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀVGS=0ꢀV  
Qgd  
30  
45  
Qsw  
Qg  
50  
72  
155  
4.7  
206  
-
Vplateau  
Qoss  
210  
279  
nC  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
100  
400  
1.2  
-
Diode continous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
1.0  
113  
317  
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C  
VR=40ꢀV,ꢀIF=IS,ꢀdiF/dt=100ꢀA/µs  
VR=40ꢀV,ꢀIF=IS,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
-
1) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
350  
140  
300  
250  
200  
150  
100  
50  
120  
100  
80  
60  
40  
20  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
10 µs  
100 µs  
0.5  
102  
101  
100  
1 ms  
0.2  
10-1  
0.1  
10 ms  
DC  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
5
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
480  
15  
10 V  
440  
7 V  
6 V  
400  
360  
320  
12  
4.5 V  
5 V  
9
6
3
0
280  
5.5 V  
240  
200  
160  
5 V  
120  
80  
5.5 V  
6 V  
7 V  
4.5 V  
10 V  
40  
0
0
1
2
3
4
5
0
50  
100  
150  
200  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
300  
250  
250  
200  
150  
100  
200  
150  
100  
50  
175 °C  
25 °C  
50  
0
0
0
2
4
6
8
0
50  
100  
150  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
6
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
6
4.0  
3.5  
3.0  
5
4
2700 µA  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
270 µA  
98 %  
3
typ  
2
1
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=100ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
105  
103  
25 °C  
175 °C  
25 °C, 98%  
175 °C, 98%  
Ciss  
104  
Coss  
102  
101  
100  
103  
Crss  
102  
101  
0
20  
40  
60  
80  
0.0  
0.5  
1.0  
1.5  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
7
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
12  
40 V  
10  
8
20 V  
102  
101  
100  
60 V  
25 °C  
100 °C  
150 °C  
6
4
2
0
10-1  
100  
101  
102  
103  
0
50  
100  
150  
200  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=50ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Gate charge waveforms  
90  
80  
70  
60  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
8
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
9
2016-03-31  
OptiMOSª3ꢀPower-Transistor,ꢀ80ꢀV  
IPB025N08N3ꢀG  
RevisionꢀHistory  
IPB025N08N3 G  
Revision:ꢀ2016-03-31  
Previous Revision  
Date  
Subjects (major changes since last revision)  
Update SOA Diagram  
2016-03-31  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
10  
2016-03-31  

相关型号：

IPB025N08N3G

 OptiMOS3 Power-transistor
INFINEON

IPB025N08N3GATMA1

 Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON

IPB025N10N3 G

 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON

IPB025N10N3G

 OptiMOS?3 Power-Transistor
INFINEON

IPB025N10N3GATMA1

 Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN
INFINEON

IPB026N06N

 New OptiMOS™ 40V and 60V
INFINEON

IPB026N06NATMA1

 Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
INFINEON

IPB026N10NF2S

 Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON

IPB027N10N3

 3 Power-Transistor
INFINEON

IPB027N10N3 G

 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON

IPB027N10N3G

 OptiMOS?3 Power-Transistor
INFINEON

IPB027N10N3GATMA1

 3 Power-Transistor
INFINEON
©2020 ICPDF网 联系我们和版权申明