select brandShort,logo,brand from pdf_brand where id=10020 limit 1 IPB025N08N3GATMA1_技术文档

IPB025N08N3GATMA1 [INFINEON]

Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3;
IPB025N08N3GATMA1
型号: IPB025N08N3GATMA1
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

开关 脉冲 晶体管
文件: 总10页 (文件大小:927K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IPB025N10N3 G

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB025N10N3G

OptiMOS?3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
141 INFINEON

IPB025N10N3GATMA1

Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB026N06N

New OptiMOS™ 40V and 60V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
43 INFINEON

IPB026N06NATMA1

Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB026N10NF2S

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB027N10N3

3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB027N10N3 G

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB027N10N3G

OptiMOS?3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
136 INFINEON

IPB027N10N3GATMA1

3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
3 INFINEON

IPB027N10N3GXT

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
3 INFINEON

IPB027N10N5

OptiMOSª 5 Power-Transistor, 100 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1 INFINEON

IPB027N10N5ATMA1

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
3 INFINEON

IPB027N10N5_16

OptiMOSª 5 Power-Transistor, 100 V

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1 INFINEON

IPB029N06N3G

OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
69 INFINEON

IPB029N06N3GATMA1

Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB029N06N3GE8187ATMA1

Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB029N06NF2S

Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 2.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB030N08N3 G

OptiMOS™ 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源(例如服务器和通信)以及功耗(例如电动车)领域。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0 INFINEON

IPB030N08N3G

OptiMOS3 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
46 INFINEON