IPB160N04S203ATMA4 [INFINEON]
Power Field-Effect Transistor, 160A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6;
| 型号： | IPB160N04S203ATMA4 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 160A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB160N04S2-03
OptiMOS® - T Power-Transistor
Product Summary
Features
V DS
40
2.9
160
V
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
R DS(on),max
I D
mΩ
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
PG-TO263-7-3
• 100% Avalanche tested
Type
Package
Ordering Code Marking
SP0002-18151 P2N0403
IPB160N04S2-03
PG-TO263-7-3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
160
160
A
T C=100 °C2)
T C=25 °C
I D=80A
Pulsed drain current2)
I D,pulse
E AS
640
Avalanche energy, single pulse
Gate source voltage
810
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 1.0
page 1
2006-03-02
IPB160N04S2-03
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
0.5
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
DS=V GS, I D=250 µA
2.1
3.0
4
V
DS=40 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
0.1
1
µA
T j=25 °C
V
DS=40 V, V GS=0 V,
-
-
-
10
1
100
T j=125 °C2)
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=60 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
2.4
2.9
mΩ
SMD version
Rev. 1.0
page 2
2006-03-02
IPB160N04S2-03
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
5300
2150
580
27
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
45
V
DD=20 V, V GS=10 V,
I D=160 A, R G=2.2 Ω
t d(off)
t f
Turn-off delay time
Fall time
52
32
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
27
46
30
75
170
-
nC
Q gd
V
V
DD=32 V, I D=160 A,
GS=0 to 10 V
Q g
123
5.2
V plateau
Gate plateau voltage
V
A
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
160
640
T C=25 °C
I S,pulse
V
GS=0 V, I F=80 A,
V SD
Diode forward voltage
-
0.84
1.3
V
T j=25 °C
1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 235A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-02
IPB160N04S2-03
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
320
280
240
200
160
120
80
160
140
120
100
80
60
40
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
1000
1
1 µs
limited by on-state
resistance
0.5
10 µs
100 µs
0.2
100
10
1
0.1
0.1
1 ms
0.05
0.02
0.01
0.01
single pulse
0
0
0
0
0
0
1
0.001
0.1
1
10
100
10-6
10-5
10-4
10-3
t p [s]
10-2
10-1
100
V
DS [V]
Rev. 1.0
page 4
2006-03-02
IPB160N04S2-03
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
10
10.0V
7.0V
300
250
200
150
100
50
6.5V
8
6
4
2
6.0V
5.5V
5.5V
5.0V
6.0V
7.0V
10.0V
0
0
0
0
1
2
3
20
40
60
80
100
V
DS [V]
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
320
280
240
200
160
120
80
300
250
200
150
100
50
175°C
40
25°C
0
0
2
3
4
5
6
7
0
80
160
240
320
I
D [A]
V
GS [V]
Rev. 1.0
page 5
2006-03-02
IPB160N04S2-03
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=80 A; V GS=10 V
V
parameter: I D
4
5
3.5
3
4
3
2
1
0
1000µA
250µA
2.5
2
1.5
-60
-60
-20
20
60
100
140
180
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Typ. Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
1000
Ciss
Coss
25 °C
100
10
175 °C
1000
Crss
100
1
0
5
10
15
DS [V]
20
25
30
0.0
0.5
1.0
1.5
V
V SD [V]
Rev. 1.0
page 6
2006-03-02
IPB160N04S2-03
13 Typ. avalanche energy
AS=f(TJ)
14 Typ. gate charge
GS=f(Q gate); I D=160A pulsed
E
V
parameter: I D=80A, V DD=25V
parameter: V DD
900
12
800
700
600
500
400
300
200
100
0
8V
32V
10
8
6
4
2
0
25
75
125
175
0
20
40
60
80
100
120
T
J [°C]
Q
gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
V GS
47
45
43
41
39
37
35
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-03-02
IPB160N04S2-03
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
• Pb-free lead plating; RoHS compliant
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-02
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