IPB200N15N3 G [INFINEON]
与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。;
| 型号： | IPB200N15N3 G |
| 厂家： | 
Infineon |
| 描述： | 与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。 |
| 文件： | 总12页 (文件大小：993K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
VDS
150
20
V
• N-channel, normal level
RDS(on),max
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
50
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB200N15N3 G
IPD200N15N3 G
IPI200N15N3 G
IPP200N15N3 G
Package
Marking
PG-TO263-3
200N15N
PG-TO252-3
200N15N
PG-TO262-3
200N15N
PG-TO220-3
200N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
50
40
A
Pulsed drain current2)
I D,pulse
E AS
200
170
I D=50 A, R GS=25 W
Avalanche energy, single pulse
mJ
I D=50 A, V DS=120 V,
di /dt =100 A/µs,
T j,max=175 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
V GS
Gate source voltage
±20
V
P tot
T C=25 °C
Power dissipation
150
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.07
page 1
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
1
K/W
R thJA
minimal footprint
75
50
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=90 µA
Drain-source breakdown voltage
Gate threshold voltage
150
2
-
-
V
3
4
V DS=120 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
0.1
1
µA
V DS=120 V, V GS=0 V,
T j=125 °C
-
-
-
10
1
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
R DS(on) V GS=10 V, I D=50 A
Drain-source on-state resistance
16
20
mW
V GS=8 V, I D=25 A
-
-
16
2.4
57
20
-
R G
Gate resistance
W
|V DS|>2|I D|R DS(on)max
I D=50 A
,
g fs
Transconductance
29
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.07
page 2
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1820
214
5
-
-
pF
ns
V GS=0 V, V DS=75 V,
f =1 MHz
C oss
C rss
t d(on)
t r
-
14
11
23
6
21
17
35
9
V DD=75 V, V GS=10 V,
I D=50 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
10
4
14
6
nC
Q gd
V DD=75 V, I D=50 A,
V GS=0 to 10 V
Q sw
Q g
9
13
31
-
Gate charge total
23
5.7
60
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=75 V, V GS=0 V
79
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
50
A
T C=25 °C
I S,pulse
220
V GS=0 V, I F=50 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
V
t rr
Reverse recovery time
-
-
106
332
-
-
ns
V R=75 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.07
page 3
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
160
120
80
40
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
102
101
100
10-1
101
1 µs
10 µs
100 µs
100
0.5
1 ms
0.2
0.1
10 ms
10-1
0.05
DC
0.02
0.01
single pulse
10-2
10-1
100
101
VDS [V]
102
103
10-5
10-4
10-3
10-2
10-1
100
tp [s]
Rev. 2.07
page 4
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
100
40
7 V
6.5 V
10 V
5 V
5.5 V
6 V
35
8 V
80
30
25
20
15
10
5
6 V
60
40
20
0
8 V
10 V
5.5 V
5 V
4.5 V
0
0
1
2
3
4
5
0
20
40
ID [A]
60
80
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
100
80
60
40
20
0
80
60
40
20
175 °C
25 °C
0
0
2
4
6
8
0
40
80
120
160
VGS [V]
ID [A]
Rev. 2.07
page 5
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
50
45
40
35
30
4
3.5
3
900 µA
90 µA
2.5
2
98%
25
20
typ
1.5
1
15
10
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
Tj [°C]
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
103
102
101
102
25 °C
175 °C
Coss
25°C, 98%
101
Crss
175°C, 98%
100
0
0
20
40
60
80
100
0.5
1
1.5
2
VSD [V]
VDS [V]
Rev. 2.07
page 6
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=50A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
10
120 V
8
75 V
25 °C
30 V
100 °C
6
4
2
0
125 °C
10
1
1
10
100
1000
0
10
20
30
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
170
165
160
155
150
145
140
135
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.07
page 7
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
PG-TO263-3 Outline
Rev. 2.07
page 8
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
PG-TO252-3 Outline
Rev. 2.07
page 9
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
PG-TO262-3 Outline
Rev. 2.07
page 10
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
PG-TO220-3 Outline
Rev. 2.07
page 11
2014-01-09
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.07
page 12
2014-01-09
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