IPB200N25N3GATMA1 [INFINEON]
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;
| 型号： | IPB200N25N3GATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：702K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS
250
20
V
• N-channel, normal level
RDS(on),max
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
64
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
Package
Marking
PG-TO263-3
200N25N
PG-TO220-3
200N25N
PG-TO262-3
200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
64
46
A
Pulsed drain current2)
I D,pulse
E AS
256
320
10
I D=47 A, R GS=25 W
Avalanche energy, single pulse
mJ
Reverse diode dv /dt
dv /dt
V GS
kV/µs
Gate source voltage
±20
V
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.4
page 1
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
0.5
62
40
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=270 µA
Drain-source breakdown voltage
Gate threshold voltage
250
2
-
-
V
3
4
V DS=200 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=200 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=64 A
17.5
2.4
20
-
mW
R G
W
|V DS|>2|I D|R DS(on)max
I D=64 A
,
g fs
Transconductance
61
122
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4
page 2
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
5340
297
4
7100 pF
V GS=0 V, V DS=100 V,
f =1 MHz
C oss
C rss
t d(on)
t r
395
-
18
-
-
-
-
ns
V DD=100 V,
V GS=10 V, I D=25 A,
R G=1.6 W
20
t d(off)
t f
Turn-off delay time
Fall time
45
12
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
22
7
-
-
nC
Q gd
V DD=100 V, I D=25 A,
V GS=0 to 10 V
Q sw
Q g
13
64
4.2
135
-
Gate charge total
86
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=100 V, V GS=0 V
179 nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
64
A
T C=25 °C
I S,pulse
256
V GS=0 V, I F=64 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
V
t rr
Reverse recovery time
-
-
170
780
-
-
ns
V R=100 V, I F=25 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.4
page 3
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
320
280
240
200
160
120
80
70
60
50
40
30
20
10
0
40
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
102
101
100
10-1
100
1 µs
10 µs
100 µs
0.5
1 ms
0.2
10-1
10 ms
DC
0.1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.4
page 4
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
150
30
10 V
7 V
125
100
75
50
25
0
25
4.5 V
5 V
5 V
20
15
10
5
7 V
10 V
4.5 V
0
0
1
2
3
4
5
0
20
40
60
80
100
120
140
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
140
120
100
80
180
160
140
120
100
80
60
60
40
40
175 °C
20
20
25 °C
0
0
0
2
4
6
8
0
25
50
75
100
125
VGS [V]
ID [A]
Rev. 2.4
page 5
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=64 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
70
60
50
40
4
3.5
3
2700 µA
270 µA
2.5
2
30
98%
1.5
1
typ
20
10
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
103
Coss
102
175 °C
25°C, 98%
102
175°C, 98%
25 °C
101
Crss
101
100
0
0
40
80
VDS [V]
120
160
0.5
1
1.5
2
VSD [V]
Rev. 2.4
page 6
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=25 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
10
1
10
8
200 V
25 °C
125 V
6
100 °C
50 V
125 °C
4
2
0
1
10
100
1000
0
20
40
60
80
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
290
280
270
260
250
240
230
220
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.4
page 7
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
PG-TO220-3: Outline
Rev. 2.4
page 8
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
PG-TO263-3: Outline
Rev. 2.4
page 9
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
PG-TO262-3: Outline
Rev. 2.4
page 10
2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4
page 11
2011-07-14
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