IPC313N10N3R [INFINEON]
英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (on))极低，具有极快的开关性能，可为各种工业和消费类应用提供出色的性能。从高电流电机控制应用到快速开关 DC-DC 转换器或 D 类音频放大器，英飞凌的产品性能卓越，效率极高，空间要求极小。;
| 型号： | IPC313N10N3R |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (on))极低，具有极快的开关性能，可为各种工业和消费类应用提供出色的性能。从高电流电机控制应用到快速开关 DC-DC 转换器或 D 类音频放大器，英飞凌的产品性能卓越，效率极高，空间要求极小。 开关 放大器 电机 音频放大器 转换器 |
| 文件： | 总3页 (文件大小：951K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPC313N10N3R
OptiMOSTM3 Power MOS Transistor Chip
Type
V(BR)DSS
RDS(on)
Die size
Thickness
IPC313N10N3R
100 V
2.7 mΩ1)
6 * 5.2 mm2
220 µm
DESCRIPTION
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N-channel enhancement mode
For dynamic characterization refer to the datasheet of IPB027N10N3 G2)
AQL 0.65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to JEDEC
Die bond: soldered or glued
Backside metallization: NiV system
Frontside metallization: AlCu system
Passivation: nitride (only on edge structure)
Electrical Characteristics on Wafer Level
at Tj = 25 °C, unless otherwise specified.
Parameter
Symbol Value
min. typ.
Unit Conditions
max.
Drain-source breakdown voltage V(BR)DSS 100
-
-
V
V
VGS = 0V
ID = 1 mA
Gate threshold voltage
VGS(th)
2
-
2.7
0.1
1
3.5
1
VDS = VGS
ID = 275 µA
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-resistance
IDSS
µA VGS = 0V
VDS = 100 V
IGSS
-
100 nA VGS = 20 V
VDS = 0 V
RDS(on)
-
1.9 3) 100 4) mΩ VGS= 10 V
ID= 2.0 A
Reverse diode forward on-voltage VSD
-
1.0
1.2
V
VGS=0 V
IF= 1 A
Internal gate resistance
RG
-
-
8
45 5)
-
-
Ω
Avalanche energy, single pulse
EAS
mJ ID= 30 A, RGS=25Ω
Infineon Technologies, Rev. 2.0
18.06.2013
IPC313N10N3R
Chip-Layout:
1) packaged in a P-TO263-3 (see ref. product)
2) IPB027N10N3 G dynamic characterization does not include the internal added RG
3) typical bare die RDS(on); VGS=10V
4) limited by wafer test-equipment
5) Wafer tested. For general avalanche capability refer to the datasheet of IPB027N10N3 G
Infineon Technologies, Rev. 2.0
18.06.2013
IPC313N10N3R
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to
support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
Infineon Technologies, Rev. 2.0
18.06.2013
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