IPF135N03LG [INFINEON]
OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters; 的OptiMOS 3功率三极管特性的优化技术， DC / DC转换器
| 型号： | IPF135N03LG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters |
| 文件： | 总12页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
OptiMOS®3 Power-Transistor
Product Summary
Features
V DS
30
13.5
30
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
R DS(on),max
I D
mΩ
A
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
IPD135N03L G
IPF135N03L G
IPS135N03L G
IPU135N03L G
Package
Marking
PG-TO252-3-11
135N03L
PG-TO252-3-23
135N03L
PG-TO251-3-11
135N03L
PG-TO251-3-21
135N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V
V
V
GS=10 V, T C=25 °C
GS=10 V, T C=100 °C
GS=4.5 V, T C=25 °C
Continuous drain current
30
26
30
A
V
GS=4.5 V,
21
T C=100 °C
Pulsed drain current2)
I D,pulse
I AS
T C=25 °C
210
30
Avalanche current, single pulse3)
T C=25 °C
E AS
I D=10 A, R GS=25 Ω
Avalanche energy, single pulse
20
mJ
I D=30 A, V DS=24 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
V
T
j,max=175 °C
V GS
Gate source voltage
1) J-STD20 and JESD22
±20
Rev. 1.0
page 1
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
31
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
4.9
75
50
K/W
R thJA
minimal footprint
6 cm² cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
30
1
-
-
-
V
DS=V GS, I D=250 µA
2.2
V
DS=30 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=30 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=4.5 V, I D=20 A
GS=10 V, I D=30 A
Gate-source leakage current
Drain-source on-state resistance5)
-
-
-
-
10
100 nA
R DS(on)
16.4
11.3
1.2
20.5
13.5
-
mΩ
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=30 A
,
Transconductance
22
43
-
S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 1.0
page 2
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
770
350
16
3
1000 pF
V
GS=0 V, V DS=15 V,
C oss
Crss
t d(on)
t r
470
-
f =1 MHz
-
-
-
-
ns
3
V
DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
12
2
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
2.7
1.2
1.2
2.6
4.8
3.5
-
-
-
-
-
-
nC
Q g(th)
Q gd
V
V
DD=15 V, I D=30 A,
GS=0 to 4.5 V
Q sw
Q g
Gate charge total
V plateau
Gate plateau voltage
V
V
V
DD=15 V, I D=30 A,
GS=0 to 10 V
Q g
Gate charge total
-
10
-
V
V
DS=0.1 V,
Q g(sync)
Q oss
Gate charge total, sync. FET
Output charge
-
-
4.2
9
-
-
nC
GS=0 to 4.5 V
V
DD=15 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
25
A
T C=25 °C
I S,pulse
210
V
GS=0 V, I F=30 A,
V SD
Q rr
Diode forward voltage
-
-
0.98
-
1.2
10
V
T j=25 °C
V R=15 V, I F=I S,
di F/dt =400 A/µs
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
35
30
25
20
15
10
5
35
30
25
20
15
10
5
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
10
limited by on-state
resistance
100 ns
0.5
1 µs
10 µs
102
101
100
10-1
0.2
1
0.1
100 µs
1 ms
0.05
0.02
0.01
DC
0.1
single pulse
0
0
0
0
0
0
1
0.01
10-1
100
101
102
10-6
10-5
10-4
10-3
p [s]
10-2
10-1
100
V
DS [V]
t
Rev. 1.0
page 4
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R
DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
120
30
5 V
100
25
4 V
3.5 V
10 V
4.5 V
80
60
40
20
0
20
15
10
5
5 V
4.5 V
10 V
4 V
11.5 V
3.5 V
3.2 V
3 V
2.8 V
0
0
0
1
2
3
20
40
60
80
100
V
DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
80
60
40
20
0
80
60
40
20
175 °C
25 °C
0
0
1
2
3
4
5
0
20
40
60
80
100
V
GS [V]
ID [A]
Rev. 1.0
page 5
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=30 A; V GS=10 V
V
GS(th)=f(T j); V GS=V DS; I D=250 µA
25
2.5
20
2
1.5
1
98 %
15
typ
10
5
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
103
Ciss
100
10
Coss
175 °C, 98%
25 °C
102
101
100
175 °C
25 °C, 98%
Crss
1
0
10
20
30
0.0
0.5
1.0
1.5
2.0
V
DS [V]
V SD [V]
Rev. 1.0
page 6
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=30 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
15 V
24 V
6 V
10
8
100 °C
25 °C
10
150 °C
6
4
2
1
0
0
10-1
100
101
102
103
4
8
12
t
AV [µs]
Q
gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
34
32
30
28
26
24
22
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Package Outline
PG-TO252-3-11
Rev. 1.0
page 8
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Package Outline
PG-TO252-3-23
Rev. 1.0
page 9
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Package Outline
PG-TO251-3-11
Rev. 1.0
page 10
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Package Outline
PG-TO251-3-21
Rev. 1.0
page 11
2006-10-23
IPD135N03L G
IPS135N03L G
IPF135N03L G
IPU135N03L G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.0
page 12
2006-10-23
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