IPG15N06S3L45ATMA1 [INFINEON]
Power Field-Effect Transistor, 17A I(D), 55V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8;
| 型号： | IPG15N06S3L45ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 17A I(D), 55V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPG15N06S3L-45
OptiMOS®-T Power-Transistor
Product Summary
VDS
55
2 x 45
15
V
5)
mΩ
A
R DS(on),max
I D
Features
• Dual N-channel Logic Level - Enhancement mode
PG-TDSON-8-4
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPG15N06S3L-45
PG-TDSON-8-4 3N03L45
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
one channel active
T C=25 °C, VGS=10 V1)
I D
15
12
60
A
T C=100 °C,
V
GS=10 V2)
Pulsed drain current2)
one channel active
I D,pulse
T C=25 °C
Avalanche energy, single pulse2, 5)
Avalanche current, single pulse5)
Gate source voltage4)
EAS
I AS
I D=7.5A
47
15
mJ
A
-
VGS
-
±16
V
Power dissipation
one channel active
Ptot
T C=25 °C
21
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
°C
-
Rev. 1.0
page 1
2008-09-23
IPG15N06S3L-45
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
7
-
K/W
minimal footprint
100
40
6 cm2 cooling area3)
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D= 1 mA
DS=VGS, I D=10 µA
Drain-source breakdown voltage
Gate threshold voltage
55
-
-
V
1.2
1.7
2.2
V
DS=55 V, VGS=0 V,
Zero gate voltage drain current5)
I DSS
-
-
0.01
1
1
µA
T j=25 °C
V
DS=55 V, VGS=0 V,
100
T j=125 °C2)
Gate-source leakage current5)
Drain-source on-state resistance5)
I GSS
V
V
V
GS=16 V, VDS=0 V
GS=5 V, I D=6A
-
-
-
1
100 nA
R DS(on)
70
39
80
45
mΩ
GS=10 V, I D=10A
Rev. 1.0
page 2
2008-09-23
IPG15N06S3L-45
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance5)
Output capacitance5)
Reverse transfer capacitance5)
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
1090
140
130
7
1420 pF
180
V
GS=0 V, VDS=25 V,
f =1 MHz
195
-
-
-
-
ns
V
V
DD=27.5 V,
GS=10 V, I D=15 A,
16
t d(off)
t f
Turn-off delay time
Fall time
24
R G=25 Ω
34
Gate Charge Characteristics2, 5)
Gate to source charge
Gate to drain charge
Q gs
-
-
-
-
6
3
8
4.5
20
-
nC
Q gd
V
V
DD=11 V, I D=15 A,
GS=0 to 10 V
Q g
Gate charge total
15
5
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
one channel active
I S
-
-
-
-
-
-
-
15
60
1.3
-
T C=25 °C
Diode pulse current2)
One channel active
I S,pulse
VSD
t rr
V
GS=0 V, I F=15 A,
Diode forward voltage
1.0
7
V
T j=25 °C
VR=27.5 V, I F=I S,
diF/dt =100 A/µs
Reverse recovery time2)
Reverse recovery charge2, 5)
ns
nC
Q rr
9
-
1) Current is limited by bondwire; with an R thJC =7 K/W the chip is able to carry 17A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) Qualified at -5V and +16V.
5) Per channel
Rev. 1.0
page 3
2008-09-23
IPG15N06S3L-45
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V; one channel active
I D = f(T C); VGS ≥ 6 V; one channel active
25
20
20
15
10
5
16
12
8
4
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D=f(VDS); T C=25°C; D =0; one channel active
parameter: t p
Z
parameter: D =t p/T
101
100
1 µs
0.5
10 µs
100
100 µs
0.1
0.05
0.01
1 ms
10
10-1
single pulse
10-2
1
0.01
0.1
1
10
100
t p [s]
V
DS [V]
Rev. 1.0
page 4
2008-09-23
IPG15N06S3L-45
5 Typ. output characteristics5)
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance5)
R
DS(on) = f(I D); T j = 25 °C
parameter: VGS
60
150
4.5 V
5 V
6 V
7 V
10 V
50
40
130
110
90
30
6 V
5.5 V
20
10
0
70
5 V
4.5 V
50
4 V
10 V
3.5 V
30
0
2
4
6
8
0
10
20
30
40
50
60
V
DS [V]
I
D [A]
7 Typ. transfer characteristics5)
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance5)
R
DS(on) = f(T j); I D = 10 A; VGS = 10 V
60
50
40
30
20
10
0
70
-55 °C
60
50
40
30
20
25 °C
175 °C
1
2
3
4
5
6
7
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.0
page 5
2008-09-23
IPG15N06S3L-45
10 Typ. Capacitances5)
C = f(VDS); VGS = 0 V; f = 1 MHz
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
V
parameter: I D
2.5
104
2
1.5
1
100 µA
Ciss
10 µA
103
Coss
Crss
0.5
102
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis5)
12 Avalanche characteristics5)
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
102
100
10
1
25 °C
100 °C
150 °C
101
25 °C
175 °C
100
0.1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD [V]
t AV [µs]
Rev. 1.0
page 6
2008-09-23
IPG15N06S3L-45
13 Avalanche energy5)
14 Drain-source breakdown voltage
E
AS = f(T j)
V
BR(DSS) = f(T j); I D = 1 mA
parameter: I D
65
63
61
59
57
55
53
51
49
47
45
100
3.75 A
80
60
40
20
0
7.5 A
15 A
-60
-20
20
60
100
140
180
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge5)
16 Gate charge waveforms
V
GS = f(Q gate); I D = 15 A pulsed
parameter: VDD
12
V GS
11 V
44 V
Q g
10
8
6
V gs(th)
4
2
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
4
8
Q
12
gate [nC]
16
20
Rev. 1.0
page 7
2008-09-23
IPG15N06S3L-45
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2008-09-23
IPG15N06S3L-45
Revision History
Version
Date
Changes
Revision 1.0
22.09.2008 Initial Final Data Sheet
Rev. 1.0
page 9
2008-09-23
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