IPI040N06N3GE8174 [INFINEON]
Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3;
| 型号： | IPI040N06N3GE8174 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 |
| 文件： | 总11页 (文件大小：998K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
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Features
Product Summary
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Type
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Package
Marking
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Value
Parameter
Symbol Conditions
Unit
T 8ꢐ ꢍ ꢑ Sꢉ *#
I 9
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ꢆꢑ ꢑ ꢀꢀꢀ ꢌ ꢓ ꢑ
ꢑ ꢑ ꢂꢌ ꢓ ꢑ ꢂꢑ ꢋ
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IPP040N06N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R _T@8
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Static characteristics
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Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
#>@DC 3 1@13 9C1>3 5
( DC@DC 3 1@13 9C1>3 5
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t P"[RR#
t R
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Reverse Diode
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%
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%
%
Z^
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IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
1 Power dissipation
2 Drain current
P
_[_4R"T 8#
I 94R"T 8ꢅꢊ V =H"ꢌ ꢒ .
200
100
160
120
80
80
60
40
20
0
40
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I 94R"V 9Hꢅꢊ T 8ꢐ ꢍ ꢑ Sꢉ ꢊ D 4(
@1A1=5C5Aꢗ t \
4 Max. transient thermal impedance
_T@84R"t \#
Z
@1A1=5C5Aꢗ D 4t \'T
103
100
<9=9C54 2 H ? >ꢆBC1C5
ꢌ V B
]Q^U^_MZOQ
ꢌ ꢒ V B
(&-
102
101
100
10-1
ꢌ ꢒ ꢒ V B
(&*
(&)
ꢌ ꢒ =B
ꢌ =B
98
10-1
(&(-
(&(*
(&()
B9>7<5 @D<B5
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
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IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
5 Typ. output characteristics
I 94R"V 9Hꢅꢊ T Vꢐ ꢍ ꢑ Sꢉ
6 Typ. drain-source on resistance
9H"[Z#4R"I 9ꢅꢊ T Vꢐ ꢍ ꢑ Sꢉ
R
@1A1=5C5Aꢗ V =H
@1A1=5C5Aꢗ V =H
15
320
ꢔ .
ꢓ .
ꢌ ꢒ .
ꢑ ꢀꢑ .
ꢑ .
ꢋ ꢀꢑ .
ꢎ ꢀꢑ .
12
240
160
80
9
6
3
ꢋ .
ꢋ .
ꢑ ꢀꢑ .
ꢋ ꢀꢑ .
ꢓ .
ꢔ .
ꢌ ꢒ .
ꢑ .
ꢎ ꢀꢑ .
0
0
0
50
100
150
0
1
2
3
4
5
V DS [V]
I D [A]
7 Typ. transfer characteristics
I 94R"V =Hꢅꢊ JV 9Hf5*fI 9fR 9H"[Z#YMc
@1A1=5C5Aꢗ T V
8 Typ. forward transconductance
g R^4R"I 9ꢅꢊ T Vꢐ ꢍ ꢑ Sꢉ
320
240
160
80
200
160
120
80
ꢌ ꢓ ꢑ Sꢉ
40
ꢍ ꢑ Sꢉ
0
0
0
2
4
6
0
50
100
150
V GS [V]
I D [A]
+ 5Eꢀ ꢌ ꢀꢒ ꢕ
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IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H"_T#4R"T Vꢅꢊ V =H4V 9H
R
9H"[Z#4R"T Vꢅꢊ I 9ꢐ ꢏ ꢒ ꢇ ꢊ V =Hꢐ ꢌ ꢒ .
V
@1A1=5C5Aꢗ I 9
8
7
6
4
3.5
3
ꢏ ꢒ ꢒ V ꢇ
ꢏ ꢒ V ꢇ
5
2.5
2
10!
4
)(J
3
2
1
0
1.5
1
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I <4R"V H9
C 4R"V 9Hꢅꢊ V =Hꢐ ꢒ .ꢊ f ꢐ ꢌ & " I
#
@1A1=5C5Aꢗ T V
104
103
8U^^
8[^^
ꢍ ꢑ Sꢉ
ꢌ ꢓ ꢑ Sꢉ ꢁ ꢏ ꢔ ꢘ
103
102
101
102
ꢌ ꢓ ꢑ Sꢉ
ꢍ ꢑ Sꢉ ꢁ ꢏ ꢔ ꢘ
101
8]^^
100
0
0
20
40
60
0.5
1
1.5
2
V DS [V]
V SD [V]
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IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
13 Avalanche characteristics
6H4R"t 6Jꢅꢊ R =Hꢐ ꢍ ꢑ "
14 Typ. gate charge
=H4R"Q SM_Qꢅꢊ I 9ꢐ ꢏ ꢒ ꢇ @D<B54
V
I
@1A1=5C5Aꢗ T V"^_M]_#
@1A1=5C5Aꢗ V 99
100
12
ꢍ ꢑ Sꢉ
ꢕ ꢒ .
10
8
ꢌ ꢒ ꢒ Sꢉ
ꢌ ꢍ .
ꢎ ꢔ .
ꢌ ꢑ ꢒ Sꢉ
10
6
4
2
1
1
0
0
10
100
1000
20
40
60
80
100
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G"9HH#4R"T Vꢅꢊ I 9ꢐ ꢌ =ꢇ
70
V =H
Q g
65
60
55
50
V S ^"_T#
Q S"_T#
Q ^b
Q SP
Q gate
Q S^
-60
-20
20
60
100
140
180
T j [°C]
+ 5Eꢀ ꢌ ꢀꢒ ꢕ
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ꢍ ꢒ ꢒ ꢏ ꢆꢌ ꢍ ꢆꢌ ꢓ
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
PG-TO220-3
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ꢍ ꢒ ꢒ ꢏ ꢆꢌ ꢍ ꢆꢌ ꢓ
IPB037N06N3 G IPI040N06N3 G
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PG-TO262-3 (I²-Pak)
+ 5Eꢀ ꢌ ꢀꢒ ꢕ
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IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
+ 5Eꢀ ꢌ ꢀꢒ ꢕ
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ꢍ ꢒ ꢒ ꢏ ꢆꢌ ꢍ ꢆꢌ ꢓ
IPB037N06N3 G IPI040N06N3 G
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
+ 5Eꢀ ꢌ ꢀꢒ ꢕ
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