IPI041N12N3GAKSA1 [INFINEON]
Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3;
| 型号： | IPI041N12N3GAKSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：857K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS
120
3.8
V
• N-channel, normal level
RDS(on),max (TO-263)
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
120
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB038N12N3 G
IPI041N12N3 G
IPP041N12N3 G
Package
Marking
PG-TO263-3
038N12N
PG-TO262-3
041N12N
PG-TO220-3
041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
120
120
A
T C=100 °C
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
480
I D=100 A, R GS=25 W
Avalanche energy, single pulse
900
mJ
V
Gate source voltage 4)
V GS
±20
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 2.3
page 1
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
min.
Values
Parameter
Symbol Conditions
Unit
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
0.5
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area5)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=270 µA
Drain-source breakdown voltage
Gate threshold voltage
120
2
-
-
V
3
4
V DS=100 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=100 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
100 nA
R DS(on) V GS=10 V, I D=100 A
Drain-source on-state resistance
3.5
4.1
3.8
-
mW
V GS=10 V, I D=100 A,
TO263
-
-
3.2
1.4
R G
Gate resistance
W
|V DS|>2|I D|R DS(on)max
I D=100 A
,
g fs
Transconductance
83
165
-
S
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A.
3) See figure 3
4)
T =150 °C and duty cycle D=0.01 for Vgs<-5V
jmax
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
min.
Values
Parameter
Symbol Conditions
Unit
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
10400
1320
61
13800 pF
V GS=0 V, V DS=60 V,
f =1 MHz
C oss
C rss
t d(on)
t r
1760
-
35
-
-
-
-
ns
V DD=60 V, V GS=10 V,
I D=100 A,
52.0
70
t d(off)
t f
Turn-off delay time
Fall time
R G,ext=1.6 W
21
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
52
37
-
nC
Q gd
-
V DD=60.1 V,
I D=100 A,
V GS=0 to 10 V
Q sw
Q g
58
-
211
-
Gate charge total
158
5.0
182
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=60.1 V, V GS=0 V
243 nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
120
480
A
T C=25 °C
I S,pulse
V GS=0 V, I F=100 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
V
t rr
Reverse recovery time
-
-
123
356
ns
V R=60 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
-
nC
6) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
350
300
250
200
150
100
50
140
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
100
limited by on-state
resistance
1 µs
100 µs
10 µs
0.5
1 ms
10 ms
0.2
102
10-1
DC
0.1
0.05
0.02
0.01
single pulse
101
10-2
100
10-3
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.3
page 4
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
10
7 V
4.5 V
9
10 V
320
6.5 V
8
6 V
7
5 V
240
6
5
4
3
2
5.5 V
5.5 V
6 V
160
5 V
10 V
80
4.5 V
0
0
1
2
3
4
5
0
50
100
150
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
250
200
150
200
160
120
80
100
175 °C
25 °C
40
50
0
0
0
2
4
6
8
0
50
100
150
VGS [V]
ID [A]
Rev. 2.3
page 5
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
R DS(on)=f(T j); I D=100 A; V GS=10 V
10
8
4
3.5
3
2700 µA
270 µA
2.5
6
98 %
2
1.5
1
typ
4
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
103
104
25 °C
175 °C, 98%
Ciss
175 °C
102
Coss
25 °C, 98%
103
Crss
101
102
101
100
0
0
20
40
60
80
100
0.5
1
1.5
2
VDS [V]
VSD [V]
Rev. 2.3
page 6
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=100 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
1000
100
10
10
96 V
8
60 V
24 V
25 °C
6
100 °C
150 °C
4
2
1
0
1
10
100
1000
0
50
100
Qgate [nC]
150
200
tAV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
140
135
130
125
120
115
110
105
100
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.3
page 7
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
PG-TO220-3: Outline
Rev. 2.3
page 8
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
Rev. 2.3
page 9
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
PG-TO-263 (D²-Pak)
Rev. 2.3
page 10
2014-04-15
IPI041N12N3 G
IPB038N12N3 G
IPP041N12N3 G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2014.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 2.3
page 11
2014-04-15
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