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IPI041N12N3G [INFINEON]

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM); OptiMOSTM3电源晶体管特性优良的栅极电荷X R DS （ ON）的乘积（ FOM ）
IPI041N12N3G
型号： IPI041N12N3G
厂家： Infineon    Infineon
描述：

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOSTM3电源晶体管特性优良的栅极电荷X R DS （ ON）的乘积（ FOM ）

晶体 栅极 晶体管
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IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
V DS  
120  
3.8  
V
• N-channel, normal level  
R DS(on),max (TO-263)  
I D  
mΩ  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
120  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant, halogen free  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPB038N12N3 G  
IPI041N12N3 G  
IPP041N12N3 G  
Package  
Marking  
PG-TO263-3  
038N12N  
PG-TO262-3  
041N12N  
PG-TO220-3  
041N12N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
120  
120  
A
T C=100 °C  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
480  
I D=100 A, R GS=25 Ω  
Avalanche energy, single pulse  
900  
mJ  
V
Gate source voltage 4)  
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 2.2  
page 1  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
Thermal resistance,  
-
-
-
-
-
-
0.5  
62  
40  
K/W  
R thJA  
minimal footprint  
6 cm2 cooling area5)  
junction - ambient  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=1 mA  
Drain-source breakdown voltage  
Gate threshold voltage  
120  
2
-
-
V
DS=V GS, I D=270 µA  
3
4
V
DS=100 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
0.1  
10  
1
µA  
T j=25 °C  
V
DS=100 V, V GS=0 V,  
100  
T j=125 °C  
I GSS  
V
V
GS=20 V, V DS=0 V  
GS=10 V, I D=100 A  
Gate-source leakage current  
-
-
1
100 nA  
R DS(on)  
Drain-source on-state resistance  
3.5  
4.1  
3.8  
-
mΩ  
V
GS=10 V, I D=100 A,  
-
-
3.2  
1.4  
TO263  
R G  
g fs  
Gate resistance  
Ω
|V DS|>2|I D|R DS(on)max  
I D=100 A  
,
Transconductance  
83  
165  
-
S
1)J-STD20 and JESD22  
2) Current is limited by bondwire; with anR thJC=0.5 K/W the chip is able to carry 182 A.  
3) See figure 3  
4)  
T
=150 °C and duty cycle D=0.01 for V <-5V  
gs  
jmax  
2
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
Rev. 2.2  
page 2  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
-
-
-
-
-
-
-
10400  
1320  
61  
13800 pF  
V
GS=0 V, V DS=60 V,  
C oss  
C rss  
t d(on)  
t r  
1760  
-
f =1 MHz  
35  
-
-
-
-
ns  
52.0  
70  
V
DD=60 V, V GS=10 V,  
I D=100 A, R G=1.6 Ω  
t d(off)  
t f  
Turn-off delay time  
Fall time  
21  
Gate Charge Characteristics6)  
Gate to source charge  
Gate to drain charge  
Switching charge  
Q gs  
-
-
-
-
-
-
52  
37  
-
nC  
V
Q gd  
-
V
DD=60.1 V,  
I D=100 A,  
Q sw  
Q g  
58  
-
211  
-
V
GS=0 to 10 V  
Gate charge total  
158  
5.0  
182  
V plateau  
Q oss  
Gate plateau voltage  
Output charge  
V
DD=60.1 V, V GS=0 V  
243 nC  
Reverse Diode  
I S  
Diode continous forward current  
Diode pulse current  
-
-
-
-
120  
480  
A
T C=25 °C  
I S,pulse  
V
GS=0 V, I F=100 A,  
V SD  
Diode forward voltage  
-
0.9  
1.2  
V
T j=25 °C  
t rr  
Reverse recovery time  
-
-
123  
356  
ns  
V R=60 V, I F=I S,  
di F/dt =100 A/µs  
Q rr  
Reverse recovery charge  
-
nC  
6) See figure 16 for gate charge parameter definition  
Rev. 2.2  
page 3  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
2 Drain current  
1 Power dissipation  
P
tot=f(T C)  
I D=f(T C); V GS≥10 V  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
60  
40  
20  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
C [°C]  
T
C [°C]  
3 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
4 Max. transient thermal impedance  
thJC=f(t p)  
Z
parameter: D =t p/T  
103  
100  
limited by on-state  
resistance  
1 µs  
100 µs  
10 µs  
0.5  
1 ms  
10 ms  
0.2  
102  
101  
100  
10-1  
DC  
0.1  
0.05  
0.02  
0.01  
10-2  
single pulse  
10-3  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
V
DS [V]  
t p [s]  
Rev. 2.2  
page 4  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
5 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
6 Typ. drain-source on resistance  
R
DS(on)=f(I D); T j=25 °C  
parameter: V GS  
parameter: V GS  
400  
10  
7 V  
4.5 V  
9
10 V  
320  
6.5 V  
8
7
6
5
4
3
6 V  
240  
5 V  
5.5 V  
5.5 V  
6 V  
160  
10 V  
80  
0
5 V  
4.5 V  
2
0
0
1
2
3
4
5
50  
100  
150  
V
DS [V]  
ID [A]  
7 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
8 Typ. forward transconductance  
g fs=f(I D); T j=25 °C  
300  
250  
200  
150  
200  
160  
120  
80  
100  
175 °C  
25 °C  
40  
50  
0
0
0
2
4
6
8
0
50  
100  
150  
V
GS [V]  
ID [A]  
Rev. 2.2  
page 5  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
9 Drain-source on-state resistance  
10 Typ. gate threshold voltage  
R
DS(on)=f(T j); I D=100 A; V GS=10 V  
V GS(th)=f(T j); V GS=V DS  
parameter: I D  
10  
4
3.5  
3
8
2700 µA  
270 µA  
2.5  
2
6
98 %  
typ  
4
1.5  
1
2
0
0.5  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
T j [°C]  
100  
140  
180  
T j [°C]  
11 Typ. capacitances  
12 Forward characteristics of reverse diode  
I F=f(V SD  
C =f(V DS); V GS=0 V; f =1 MHz  
)
parameter: T j  
105  
103  
104  
175 °C, 98%  
25 °C  
Ciss  
175 °C  
102  
Coss  
25 °C, 98%  
103  
Crss  
101  
102  
101  
100  
0
0
20  
40  
60  
DS [V]  
80  
100  
0.5  
1
1.5  
2
V
V SD [V]  
Rev. 2.2  
page 6  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
14 Typ. gate charge  
GS=f(Q gate); I D=100 A pulsed  
13 Avalanche characteristics  
AS=f(t AV); R GS=25 Ω  
V
I
parameter: T j(start)  
parameter: V DD  
1000  
10  
96 V  
8
6
4
2
60 V  
24 V  
100  
10  
25 °C  
100 °C  
150 °C  
1
1
0
0
10  
100  
1000  
50  
100  
Q gate [nC]  
150  
200  
t
AV [µs]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V
BR(DSS)=f(T j); I D=1 mA  
140  
135  
130  
125  
120  
115  
110  
105  
100  
V GS  
Q g  
V gs(th)  
Q g(th)  
Q sw  
Q gd  
Q gate  
Q gs  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
Rev. 2.2  
page 7  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
PG-TO220-3: Outline  
Rev. 2.2  
page 8  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
Rev. 2.2  
page 9  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
PG-TO-263 (D²-Pak)  
Rev. 2.2  
page 10  
2009-07-16  
IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2006.  
All Rights Reserved.  
Attention please!  
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o  
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values  
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby  
disclaims any and all warranties and liabilities of any kind, including without limitation warranties o  
non-infringement of intellectual property rights of any third party  
Information  
For further information on technology, delivery terms and conditions and prices please contact your neares  
Infineon Technologies Office (www.infineon.com ).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
Rev. 2.2  
page 11  
2009-07-16  

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