IPI040N06N3G [INFINEON]
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS; 的OptiMOS ™ 3电源晶体管特性的同步。整流，驱动器和DC / DC开关电源
| 型号： | IPI040N06N3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS |
| 文件： | 总11页 (文件大小：479K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
OptiMOS™3 Power-Transistor
Features
Product Summary
V DS
60
3.7
90
V
R DS(on),max (SMD)
I D
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
mΩ
A
previous engineering
sample codes:
IPP04xN06N
• N-channel, normal level
IPI04xN06N
IPB04xN06N
• Avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB037N06N3 G
IPI040N06N3 G
IPP040N06N3 G
Package
Marking
PG-TO263-3
037N06N
PG-TO262-3
040N06N
PG-TO220-3
040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
90
90
A
T C=100 °C
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
360
I D=90 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
165
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
188
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
-55 ... 175
55/175/56
2) Current is limited by bondwire; with anR thJC=0.8 K/W the chip is able to carry 162 A.
3) See figure 3
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
2
connection. PCB is vertical in still air.
Rev. 1.03
page 1
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
0.8
62
40
K/W
R thJA
minimal footprint
6 cm² cooling area4)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
60
2
-
-
V
V GS(th)
V DS=V GS, I D=90 µA
3
4
V DS=60 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V
DS=60 V, V GS=0 V,
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
100 nA
R DS(on) V GS=10 V, I D=90 A
Drain-source on-state resistance
3.3
4
3.7
-
mΩ
V
GS=10 V, I D=90 A,
-
-
3.0
1.3
(SMD)
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=90 A
,
Transconductance
61
121
-
S
Rev. 1.03
page 2
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
8000
1700
58
11000 pF
2300
V GS=0 V, V DS=30 V,
f =1 MHz
C oss
C rss
t d(on)
t r
87
30
-
-
-
-
ns
70
V
DD=30 V, V GS=10 V,
I D=90 A, R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
40
5
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
42
9
-
-
-
-
-
-
nC
Q gd
V DD=30 V, I D=90 A,
GS=0 to 10 V
Q sw
Q g
27
98
5.3
79
V
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=30 V, V GS=0 V
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
90
A
T C=25 °C
I S,pulse
360
V GS=0 V, I F=90 A,
T j=25 °C
V SD
Diode forward voltage
-
0.97
1.2
V
t rr
Reverse recovery time
-
-
125
110
-
-
ns
V R=30 V, IF=50A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 1.03
page 3
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
200
100
160
120
80
80
60
40
20
0
40
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
100
limited by on-state
resistance
1 µs
10 µs
0.5
102
101
100
10-1
100 µs
0.2
0.1
10 ms
1 ms
DC
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.03
page 4
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
15
320
8 V
7 V
10 V
5.5 V
5 V
6.5 V
4.5 V
12
9
240
160
80
6 V
6
6 V
5.5 V
6.5 V
7 V
8 V
3
10 V
5 V
4.5 V
2
0
0
0
50
100
150
0
1
3
4
5
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
320
240
160
80
200
160
120
80
175 °C
40
25 °C
0
0
0
2
4
6
0
50
100
150
V GS [V]
ID [A]
Rev. 1.03
page 5
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=90 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
8
7
6
4
3.5
3
900 µA
90 µA
5
2.5
2
98%
4
10V
3
2
1
0
1.5
1
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
Coss
25 °C
175 °C, 98%
103
102
101
102
175 °C
25 °C, 98%
101
Crss
100
0
0
20
40
60
0.5
1
1.5
2
V DS [V]
V SD [V]
Rev. 1.03
page 6
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
13 Avalanche characteristics
14 Typ. gate charge
GS=f(Q gate); I D=90 A pulsed
V
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
parameter: V DD
100
12
25 °C
30 V
10
8
100 °C
12 V
48 V
150 °C
10
6
4
2
1
0
0
1
10
100
1000
20
40
60
80
100
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
70
V GS
Q g
65
60
55
50
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.03
page 7
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
PG-TO220-3
Rev. 1.03
page 8
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
PG-TO262-3 (I²-Pak)
Rev. 1.03
page 9
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Rev. 1.03
page 10
2009-12-17
IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.03
page 11
2009-12-17
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