IPP12CNE8N [INFINEON]
OptiMOS㈢2 Power-Transistor; OptiMOS®2功率三极管
| 型号： | IPP12CNE8N |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢2 Power-Transistor |
| 文件： | 总12页 (文件大小：558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
OptiMOS®2 Power-Transistor
Product Summary
V DS
Features
85
12.4
67
V
• N-channel, normal level
R
DS(on),max (TO252)
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
I D
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPB12CN10N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Type
PG-TO263-3
12CNE8N
PG-TO252-3
12CNE8N
PG-TO262-3
12CNE8N
PG-TO220-3
12CNE8N
Package
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
67
48
A
Pulsed drain current2)
I D,pulse
E AS
268
154
I D=67 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=67 A, V DS=68 V,
di /dt =100 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage3)
V GS
±20
V
P tot
T C=25 °C
Power dissipation
125
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) see figure 3
3)
T
=150°C and duty cycle D=0.01 for Vgs<-5V
jmax
Rev. 1.01
page 1
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
-
-
-
-
1.2
62
40
75
50
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
6 cm2 cooling area4)
minimal footprint
Thermal resistance, junction -
ambient (TO252)
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=83 µA
Drain-source breakdown voltage
Gate threshold voltage
85
2
-
-
V
3
4
V
DS=68 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
0.1
1
µA
T j=25 °C
V
DS=68 V, V GS=0 V,
-
-
-
10
1
100
T j=125 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=67 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
9.2
12.4
12.6
mΩ
(TO252)
V
GS=10 V, I D=67 A,
-
9.4
(TO262)
V
GS=10 V, I D=67 A,
-
-
9.7
1.5
77
12.9
(TO220, TO263)
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=67 A
,
Transconductance
39
S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.01
page 2
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
3260
608
44
4340 pF
809
V
GS=0 V, V DS=40 V,
C oss
C rss
t d(on)
t r
f =1 MHz
66
17
26
31
48
12
ns
21
V
DD=40 V, V GS=10 V,
I D=33.5 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
32
8
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
19
12
21
48
5.5
46
26
17
30
64
-
nC
Q gd
V
V
DD=40 V, I D=100 A,
Q sw
Q g
GS=0 to 10 V
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=40 V, V GS=0 V
61
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
67
A
T C=25 °C
I S,pulse
268
V
GS=0 V, I F=67 A,
V SD
Diode forward voltage
-
1
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
103
255
-
-
ns
V R=40 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 1.01
page 3
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
140
120
100
80
70
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
102
101
100
10-1
101
1 µs
10 µs
100 µs
1 ms
10 ms
100
0.5
DC
0.2
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 1.01
page 4
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
250
30
5 V
10 V
8 V
7 V
25
20
15
10
5
200
150
5.5 V
6.5 V
6 V
100
6 V
10 V
5.5 V
50
5 V
4.5 V
0
0
0
0
1
2
3
4
5
20
40
D [A]
60
80
V
DS [V]
I
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
250
200
150
100
100
80
60
40
20
0
175 °C
50
0
25 °C
0
2
4
6
8
0
20
40
60
80
I
D [A]
V
GS [V]
Rev. 1.01
page 5
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=67 A; V GS=10 V
V
parameter: I D
30
25
20
4
3.5
3
830 µA
83 µA
2.5
2
98 %
15
typ
1.5
1
10
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
103
25 °C
104
175 °C
102
175 °C, 98%
Ciss
Coss
103
25 °C, 98%
101
102
Crss
101
100
0
0
20
40
60
80
0.5
1
1.5
2
V
DS [V]
V SD [V]
Rev. 1.01
page 6
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=67 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
40 V
10
8
20 V
25 °C
100 °C
60 V
150 °C
10
6
4
2
1
1
0
0
10
100
1000
10
20
30
40
50
Q
gate [nC]
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
100
V GS
Q g
95
90
85
80
75
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.01
page 7
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
PG-TO220-3: Outline
Rev. 1.01
page 8
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
Rev. 1.01
page 9
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
Rev. 1.01
page 10
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
PG-TO252-3: Outline
Rev. 1.01
page 11
2006-02-17
IPB12CNE8N G IPD12CNE8N G
IPI12CNE8N G IPP12CNE8N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.01
page 12
2006-02-17
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