IR2154STRPBF [INFINEON]
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| 型号： | IR2154STRPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 驱动器 |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet No. PD60063I
IR2154
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
Product Summary
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
•
•
•
•
•
•
•
•
•
•
•
•
•
V
600V max.
50%
OFFSET
Duty Cycle
T /T
80/40ns
15.6V
Shutdown feature (1/6th Vcc) on C pin
r p
T
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
V
clamp
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
High side output in phase with RT
Deadtime (typ.)
1.2 µs
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Packages
Description
The IR2154 is an improved version of the popular
IR2152 gate driver IC, and incorporates a high voltage
half-bridge gate driver with a front end oscillator simi-
lar to the industry standard CMOS 555 timer. The
IR2154 provides more functionality and is easier to use
than previous ICs. A shutdown feature has been de-
8 Lead SOIC
8 Lead PDIP
signed into the C pin, so that both gate driver outputs
T
can be disabled using a low voltage control signal. In
addition, the gate driver output pulse widths are the
same once the rising undervoltage lockout threshold
Typical Connection
on V
has been reached, resulting in a more stable
CC
profile of frequency vs time at startup. Noise immu-
nity has been improved significantly, both by lowering
the peak di/dt of the gate drivers, and by increasing the
undervoltage lockout hysteresis to 1V. Finally, special
attention has been payed to maximizing the latch
immunity of the device, and providing comprehensive
ESD protection on all pins.
600V
MAX
VCC
VB
HO
VS
RT
CT
LO
Shutdown
COM
IR2154
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
Units
V
V
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
-0.3
625
B
S
V
- 25
V
V
+ 0.3
+ 0.3
+ 0.3
+ 0.3
B
B
B
V
HO
V - 0.3
S
V
V
V
V
-0.3
-0.3
-0.3
—
V
V
LO
RT
CT
CC
CC
R
pin voltage
pin voltage
T
T
CC
C
V
+ 0.3
CC
I
Supply current (note 1)
pin current
25
mA
V/ns
W
I
R
T
-5
5
50
RT
dV /dt
Allowable offset voltage slew rate
-50
—
s
P
Maximum power dissipation @ T ≤ +25°C
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
1.0
D
A
—
0.625
125
200
150
150
300
Rth
Thermal resistance, junction to ambient
—
JA
°C/W
°C
—
T
Junction temperature
-55
-55
—
J
T
Storage temperature
S
T
Lead temperature (soldering, 10 seconds)
L
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
Definition
Min.
Max.
Units
V
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
V
- 0.7
V
Bs
CC
CLAMP
600
V
V
-3.0 (note 2)
10
S
CC
CC
V
V
CLAMP
I
Supply current
(note 3)
-40
5
mA
°C
T
Junction temperature
125
J
Note 1:
This IC contains a zener clamp structure between the chip V
and COM which has a nominal breakdown
CC
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V specified in the Electrical Characteristics section.
CLAMP
Note 2:
Note 3:
Care should be taken to avoid output switching conditions where the V node flies inductively below ground by
more than 5V.
S
Enough current should br supplied to the V pin of the IC to keep the internal 15.6V zener diode clamping the
CC
voltage at this pin.
2
IR2154
Recommended Component Values
Symbol
Component
Min.
10
Max.
Units
kΩ
R
T
T
Timing resistor value
—
—
C
C
T
pin capacitor value
330
pF
IR2154 RT vs Frequency
1000000
100000
10000
1000
330pf
470pF
1nF
CT Values
2.2nF
4.7nF
10nF
100
10
10
100
1000
10000
100000
1000000
RT (ohms)
Electrical Characteristics
V
(V , V ) = 12V, C = 1000 pF, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I
L T A IN TH
BIAS CC BS
IN
parameters are referenced to COM. The V and I parameters are referenced to COM and are applicable to the
O
O
respective output leads: HO or LO.
LowVoltage Supply Characteristics
Symbol Definition
Min. Typ. Max. Units Test Conditions
V
V
V
Rising V
undervoltage lockout threshold
undervoltage lockout threshold
8.1
7.2
0.5
—
9.0
8.0
9.9
8.8
CCUV+
CCUV-
CC
Falling V
V
CC
V
CC
undervoltage lockout Hysteresis
1.0
1.5
CCUVH
QCCUV
I
Micropower startup V
supply current
75
150
950
16.8
V
≤ V
CC CCUV-
CC
µA
I
Quiescent V
supply current
CC
—
500
15.6
QCC
V
V
CC
zener clamp voltage
14.4
V
I
= 5mA
CLAMP
CC
3
IR2154
Electrical Characteristics (cont.)
Floating Supply Characteristics
Symbol Definition
Min.
Typ. Max. Units Test Conditions
I
Micropower startup V supply current
BS
—
—
—
0
10
50
5.0
V
≤ V
QBSUV
CC CCUV-
µA
I
Quiescent VBS supply current
30
4.0
QBS
V
Minimum required V voltage for proper
V
V
=V
+ 0.1V
BSMIN
BS
CC CCUV+
functionality from R to HO
T
I
Offset supply leakage current
—
—
50
µA
V = V = 600V
B S
LK
Oscillator I/O Characteristics
Symbol Definition
Min.
Typ. Max. Units Test Conditions
f
Oscillator frequency
19.4
20
20.6
R = 36.9kΩ
T
RT = 7.43kΩ
fo < 100kHz
osc
kHz
94
48
—
100
50
106
52
d
I
R
pin duty cycle
pin current
%
T
C
0.001
0.70
8.0
1.0
1.2
—
uA
mA
T
CT
I
UV-mode C pin pulldown current
0.30
—
V = 7V
CC
T
CTUV
V
V
V
V
Upper C ramp voltage threshold
T
CT+
CT-
V
—
4.0
—
Lower C ramp voltage threshold
T
C
T
voltage shutdown threshold
1.8
—
—
—
—
2.1
10
2.4
50
CTSD
RT+
I
= 100µA
= 1mA
= 100µA
= 1mA
≤ V
High-level R output voltage, V
- V
T
CC
RT
RT
100
10
100
300
50
300
I
I
I
RT
RT
RT
V
Low-level R output voltage
T
RT-
mV
—
—
0
100
50
V
I
V
V
UV-mode R output voltage
T
RTUV
RTSD
CC
CCUV-
10
= 100µA,
SD-Mode R output voltage, V
- V
T
CC
RT
RT
V
CT
= 0V
—
10
300
I
= 1mA,
RT
V
CT
= 0V
Gate Driver Output Characteristics
Symbol Definition
Min.
Typ. Max. Units Test Conditions
V
High level output voltage, V
-V
—
—
—
0
0
0
100
100
100
I
O
= OA
= OA
= OA
OH
BIAS
O
VOL
Low-level output voltage, VO
I
O
I
O
mV
VOL_UV UV-mode output voltage, VO
V
CC
≤ V
CCUV-
t
t
t
t
Output rise time
—
—
80
150
100
—
r
Output fall time
45
nsec
f
Shutdown propogation delay
Output deadtime (HO or LO)
—
0.35
660
0.60
sd
d
0.85
µsec
4
IR2154
Functional Block Diagram
RT
VB
HV
R
Q
LEVEL
SHIFT
+
-
L
S
R
S
HO
PULSE
FILTER
R
R
S
Q
Q
PULSE
GEN
DEAD
TIME
VS
+
-
VCC
R/2
R/2
15.6V
+
-
CT
LO
DELAY
LOGIC
DEAD
TIME
UV
DETECT
COM
Lead Definitions
Symbol Description
V
Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
CC
R
C
T
T
COM
LO
Low side gate driver output
V
High voltage floating supply return
High side gate driver output
S
HO
V
High side gate driver floating supply
B
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2154
IR2154S
5
IR2154
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
6
IR2154
V
CLAMP
Vccuv+
Vcc
RT
CT
2/3
RT
,C T
1/3
td
HO
td
LO
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
Figure 3. Deadtime Waveform Definitions
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Data and specifications subject to change without notice.
3/1/99
7
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