IR2155 [INFINEON]
SELF-OSCILLATING HALF-BRIDGE DRIVER; 自振荡半桥驱动器
| 型号： | IR2155 |
| 厂家： | 
Infineon |
| 描述： | SELF-OSCILLATING HALF-BRIDGE DRIVER |
| 文件： | 总6页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Data Sheet No. PD-6.029G
IR2155
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
Product Summary
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Undervoltage lockout
V
600V max.
50%
OFFSET
Duty Cycle
I +/-
210 mA / 420 mA
10 - 20V
O
n Programmable oscillator frequency
1
V
OUT
f =
1.4 ×(RT +150Ω)× CT
Deadtime (typ.)
Package
1.2 µs
n Matched propagation delay for both channels
n Micropower supply startup current of 125 µA typ.
n Low side output in phase with RT
Description
The IR2155 is a high voltage, high speed, self-os-
cillating power MOSFET and IGBT driver with both high
and low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction.The front end fea-
tures a programmable oscillator which is similar to the
555 timer. The output drivers feature a high pulse cur-
rent buffer stage and an internal deadtime designed for
minimum driver cross-conduction. Propagation delays
for the two channels are matched to simplify use in
50% duty cycle applications.The floating channel can
be used to drive an N-channel power MOSFET or IGBT
in the high side configuration that operates off a high
voltage rail up to 600 volts.
Typical Connection
up to 600V
V CC
RT
V B
HO
V S
T O
L O A D
CT
C O M
LO
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IR2155
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.All voltage param-
eters are absolute voltages referenced to COM.The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter
Definition
Value
Symbol
Min.
Max.
Units
V
V
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Output Voltage
-0.3
625
B
S
V
- 25
V + 0.3
B
B
S
V
V
- 0.3
V
+ 0.3
HO
B
V
V
-0.3
V
+ 0.3
+ 0.3
+ 0.3
LO
CC
CC
CC
V
RT
R Voltage
T
-0.3
-0.3
—
V
V
V
C Voltage
T
CT
I
Supply Current (Note 1)
25
CC
mA
V/ns
W
I
R
Output Current
T
-5
5
RT
dV /dt
Allowable Offset Supply Voltage Transient
—
50
s
P
Package Power Dissipation @ T ≤ +25°C
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
—
1.0
D
A
—
0.625
125
200
150
150
300
R
Thermal Resistance, Junction to Ambient
—
θJA
°C/W
°C
—
T
Junction Temperature
—
J
T
Storage Temperature
-55
—
S
T
Lead Temperature (Soldering, 10 seconds)
L
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V offset rating is tested with all supplies biased at 15V differential.
S
Parameter
Definition
Value
Symbol
Min.
Max.
Units
V
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Output Voltage
V
S
+ 10
V + 20
S
B
S
V
—
600
V
V
V
V
B
HO
S
V
0
V
CC
LO
I
Supply Current (Note 1)
—
5
mA
°C
CC
T
Ambient Temperature
-40
125
A
Note 1:
Because of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clamp
structure between the chip V and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
CC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V and the rectified line voltage and a local decoupling capacitor from
CC
V
to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
CC
fore, this circuit should not be driven by a DC, low impedance power source of greater than V
.
CLAMP
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IR2155
Dynamic Electrical Characteristics
V
(V , V ) = 12V, C = 1000 pF and T = 25°C unless otherwise specified.
BIAS CC BS L A
Parameter
Definition
Value
Min. Typ. Max. Units Test Conditions
Symbol
t
Turn-On Rise Time
Turn-Off Fall Time
Deadtime
—
—
80
40
120
70
r
ns
t
r
DT
D
0.50
48
1.20 2.25
50 52
µs
%
R Duty Cycle
T
Static Electrical Characteristics
V
(V , V ) = 12V, C = 1000 pF, C = 1 nF and T = 25°C unless otherwise specified. The V , V
and I
IN TH IN
BIAS CC BS
L
T
A
parameters are referenced to COM. The V and I parameters are referenced to COM and are applicable to the
O
O
respective output leads: HO or LO.
Parameter
Definition
Value
Min. Typ. Max. Units Test Conditions
Symbol
f
Oscillator Frequency
19.4
94
14.4
7.8
3.8
—
20.0
100
15.6
8.0
4.0
20
20.6
106
16.8
8.2
R = 35.7 kΩ
T
OSC
kHz
R = 7.04 kΩ
T
V
V
CC
Zener Shunt Clamp Voltage
I
= 5 mA
CLAMP
CC
V
2/3 V Threshold
CC
V
CT+
V
1/3 V Threshold
4.2
CT-
CC
V
CTUV
C
T
Undervoltage Lockout
50
2.5V < V < V
CC CCUV
V
R High Level Output Voltage, V - R
—
—
0
200
20
200
0
100
300
50
300
100
100
100
50
I
= -100 µA
RT+
T
CC
T
RT
I
= -1 mA
RT
V
R Low Level Output Voltage
T
—
—
I = 100 µA
RT
RT-
mV
I
= 1 mA
RT
V
RTUV
RT Undervoltage Lockout, V - R
—
2.5V < V < V
CC CCUV
CC
T
V
High Level Output Voltage, V
- V
—
—
I
I
= 0A
= 0A
OH
BIAS
O
O
O
V
Low Level Output Voltage, V
—
—
OL
O
I
Offset Supply Leakage Current
Quiescent V Supply Current
—
—
V = V = 600V
B S
LK
I
—
70
150
125
1000
150
1.0
QBS
BS
I
Micropower V Supply Startup Current
—
55
QBSUV
BS
µA
I
Quiescent V Supply Current
—
500
70
QCC
CC
I
Micropower V Supply Startup Current
—
QCCUV
CC
I
C Input Current
T
—
0.001
8.4
CT
V
V
BS
Supply Undervoltage Positive Going
7.7
9.2
BSUV+
Threshold
Supply Undervoltage Negative Going
Threshold
V
mV
V
V
V
BS
7.3
8.1
8.9
BSUV-
V
V
V
Supply Undervoltage Lockout Hysteresis
Supply Undervoltage Positive Going
100
7.7
400
8.4
—
BSUVH
CCUV+
BS
V
CC
9.2
Threshold
Supply Undervoltage Negative Going
V
V
CC
7.4
8.1
8.9
CCUV-
Threshold
Supply Undervoltage Lockout Hysteresis
V
V
CC
200
210
420
400
250
500
—
—
—
mV
mA
CCUVH
I
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
V
O
= 0V
O+
I
O-
V
= 15V
O
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-201
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IR2155
Functional Block Diagram
VB
UV
DETECT
R
R
R
S
Q
HV
LEVEL
SHIFT
HO
PULSE
FILTER
RT
-
R
S
Q
Q
PULSE
GEN
DEAD
TIME
VS
+
R
VCC
15.6V
-
CT
+
DEAD
TIME
LO
DELAY
UV
DETECT
R
COM
Lead Definitions
Lead
Symbol Description
R
Oscillator timing resistor input,in phase with LO for normal IC operation
T
T
C
Oscillator timing capacitor input, the oscillator frequency according to the following equation:
1
f =
1.4 ×(RT +150Ω)× CT
where 150Ω is the effective impedance of the R output stage
T
V
High side floating supply
High side gate drive output
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
Low side return
B
HO
V
S
V
CC
LO
COM
Lead Assignments
8 Lead DIP
IR2155
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IR2155
Device Information
Process & Design Rule
Transistor Count
Die Size
HVDCMOS 4.0 µm
260
88 X 92 X 26 (mil)
Die Outline
Thickness of Gate Oxide
Connections
First
800Å
Poly Silicon
4 µm
Material
Width
Layer
Spacing
Thickness
Material
Width
Spacing
Thickness
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6 µm
Second
Layer
9 µm
20,000Å
Contact Hole Dimension
Insulation Layer
8 µm X 8 µm
PSG (SiO2)
1.5 µm
PSG (SiO2)
1.5 µm
Material
Thickness
Material
Passivation
Thickness
Method of Saw
Method of Die Bond
Wire Bond
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Method
Material
Material
Die Area
Leadframe
Ag
Lead Plating
Types
Materials
Pb : Sn (37 : 63)
8 Lead PDIP / SO-8
EME6300 / MP150 / MP190
Package
Remarks:
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CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-203
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IR2155
VCCUV
+
VCLAMP
VCC
RT (HO)
RT
50%
50%
t
CT
RT
(LO)
t
f
r
HO
LO
90%
90%
LO
HO
10%
10%
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
RT
50%
50%
90%
10%
HO
DT
LO
90%
10%
Figure 3. Deadtime Waveform Definitions
B-204 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
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