IRF1104L [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF1104L |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91845
IRF1104S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Surface Mount (IRF1104S)
l Low-profile through-hole (IRF1104L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 40V
RDS(on) = 0.009Ω
G
ID = 100Aꢀ
l Fully Avalanche Rated
S
Description
FifthGenerationHEXFETsfromInternationalRectifierutilize
advancedprocessingtechniquestoachieveextremelylow
on-resistancepersiliconarea. Thisbenefit,combinedwith
thefastswitchingspeedandruggedizeddevicedesignthat
HEXFETPowerMOSFETsarewellknownfor,providesthe
designerwithanextremelyefficientandreliabledevicefor
useinawidevarietyofapplications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internalconnectionresistanceandcandissipateupto2.0W
inatypicalsurfacemountapplication.
2
T O -262
D
Pak
Thethrough-holeversion(IRF1104L)isavailableforlow-
profileapplications.
Absolute Maximum Ratings
Parameter
Max.
100
71
400
2.4
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
A
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
170
1.1
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
±20
350
60
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
17
mJ
V/ns
5.0
-55 to + 175
300 (1.6mm from case )
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Typ.
–––
Max.
0.9
62
Units
RθJC
°C/W
RθJA
–––
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1
11/20/98
IRF1104S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.009
Ω
V
S
VGS = 10V, ID = 60A
VDS = VGS, ID = 250µA
VDS = 30V, ID = 60Aꢀ
Gate Threshold Voltage
2.0
37
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 93
––– ––– 29
––– ––– 30
VDS = 40V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
VGS = -20V
ID = 60A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 32V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
15 –––
VDD = 20V
––– 114 –––
ID = 60A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
28 –––
19 –––
RG = 3.6Ω
RD = 0.33Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
–––
––– nH
7.5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2900 –––
––– 1100 –––
––– 250 –––
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
100
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
400
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 74 110
––– 188 280
V
TJ = 25°C, IS =60A, VGS = 0V
TJ = 25°C, IF =60A
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀUses IRF1104 data and test conditions.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 194µH
R
G = 25Ω, IAS = 60A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRF1104S/L
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 175 C
J
°
°
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000
100A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
5.0
V
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRF1104S/L
5000
20
15
10
5
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 60A
D
GS
V
V
= 32V
= 20V
C
= C + C
DS
DS
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
gd
4000
3000
2000
1000
0
oss
ds
C
iss
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
25
50
75
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF1104S/L
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
DM
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1104S/L
800
600
400
200
0
I
D
TOP
24A
42A
15V
BOTTOM 60A
DRIVER
L
V
D S
D.U.T
R
G
+
V
D D
-
I
A
AS
20V
t
0.01Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
V
Starting T , Junction Temperature( C)
J
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF1104S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
+
-
•
VDD
•
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D =
Period
Period
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRF1104S/L
D2Pak Package Details
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
1.32 (.052)
1.22 (.048)
M AX.
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMEND ED FOOTPRINT
11.43 (.450)
8.89 (.350)
LE AD ASSIGNM ENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENS IONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
DIM ENS IONIN G & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLIN G DIMENSION : INCH.
3 - SOURCE
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUD E BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking
A
INTERNATIO NAL
RECTIFIER
LOGO
PART NUMB ER
F530S
9246
1M
DATE CODE
(YYW W )
9B
A SSEM BLY
YY
=
YEAR
= W EEK
LOT
CODE
W W
8
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IRF1104S/L
TO-262 Package Details
Part Marking
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9
IRF1104S/L
D2Pak Tape and Reel
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069 )
1.25 (.049 )
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
M IN .
30.40 (1.197)
M AX.
N O TES
:
1. C O M FO RM S TO EIA-418.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ETER .
3. D IM ENSIO N M EASUR ED
4. IN CLU D ES FLAN G E D ISTO R TIO N
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
@
O U TER ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 11/98
10
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