IRF6602TR1_技术文档

PD-94363C

IRF6602/IRF6602TR1

HEXFET^®Power MOSFET

V_DSS

20V

R_DS(on)max

13mΩ@V_GS= 10V

19mΩ@V_GS= 4.5V

Qg

12nC

l ApplicationSpecificMOSFETs

l Ideal for CPU Core DC-DC Converters

l Low Conduction Losses

l Low Switching Losses

l Low Profile (<0.7 mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

DirectFET ISOMETRIC

MQ

Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)

MQ

SQ

SX

ST

MX

MT

Description

The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to

achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment

and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the

manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in

power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the

latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are

critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Parameter

Max.

20

Units

V

V_DS

Drain-to-Source Voltage

V

Gate-to-Source Voltage

±20

48

GS

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I

@ T_C= 25°C

D

@ T_A= 25°C

@ T_A= 70°C

11

8.9

89

A

DM

Power Dissipation

P

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

2.3

1.5

42

W

D

Power Dissipation

Linear Derating Factor

Operating Junction and

0.018

-40 to + 150

W/°C

°C

T

J

T

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Ambient

Typ.

–––

12.5

20

Max.

55

Units

R_θ

JA

–––

3.0

JA

Junction-to-Ambient

Junction-to-Case

°C/W

JA

–––

1.0

JC

Junction-to-PCB Mounted

–––

J-PCB

Notes through are on page 11

www.irf.com

1

3/1/04

IRF6602/IRF6602TR1

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BV_DSS

∆Β

Drain-to-Source Breakdown Voltage

20

–––

V

V_GS= 0V, I_D= 250µA

∆

V_DSS/ T_J

Breakdown Voltage Temp. Coefficient –––

22

––– mV/°C Reference to 25°C, I_D= 1mA

mΩ

R_DS(on)

Static Drain-to-Source On-Resistance

–––

1.0

10

13

19

V_GS= 10V, I_D= 11A

_GS= 4.5V, I_D= 8.8A

14

V

V_GS(th)

Gate Threshold Voltage

2.0

-4.4

–––

12

2.3

V

V_DS= V_GS, I_D= 250µA

∆

V_GS(th)

I_DSS

I_GSS

Gate Threshold Voltage Coefficient

–––

20

––– mV/°C

100

V_DS= 20V, V_GS= 0V

Drain-to-Source Leakage Current

20

125

200

-200

–––

18

µA V_DS= 16V, V_GS= 0V

V_DS= 16V, V_GS= 0V, T_J= 125°C

nA V_GS= 20V

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= -20V

gfs

Q_g

S

V_DS= 10V, I_D= 8.8A

–––

Q_gs1

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

3.5

1.3

4.2

3.0

5.5

19

–––

4.2

V_DS= 10V

_GS= 4.5V

Q_gs2

Q_gd

nC

V

I_D= 8.8A

Q_godr

Gate Charge Overdrive

See Fig. 16

Q_sw

Switch Charge (Q_gs2+ Q_gd)

Q_oss

R_G

Output Charge

nC V_DS= 16V, V_GS= 0V

Ω

Gate Resistance

Turn-On Delay Time

Rise Time

2.8

33

t_d(on)

t_r

t_d(off)

t_f

–––

V_DD= 15V, V_GS= 4.5V

I_D= 8.8A

6.0

14

Turn-Off Delay Time

Fall Time

ns Clamped Inductive Load

12

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 1420 –––

V_GS= 0V

pF V_DS= 10V

ƒ = 1.0MHz

–––

960

100

–––

Avalanche Characteristics

Parameter

Typ.

–––

Max.

97

Units

mJ

A

Single Pulse Avalanche Energy

E_AS

I_AR

Avalanche Current

8.8

Repetitive Avalanche Energy

E_AR

4.2

mJ

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

–––

48

D

(Body Diode)

A

showing the

I_SM

G

Pulsed Source Current

–––

380

integral reverse

S

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

0.83

42

1.2

62

77

V

T = 25°C, I = 8.8A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

ns T = 25°C, I = 8.8A

J F

Q_rr

di/dt = 100A/µs

51

nC

2

www.irf.com

IRF6602/IRF6602TR1

1000

100

10

1000

VGS

10V

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

100

10

1

BOTTOM 2.7V

2.7V

20µs PULSE WIDTH

Tj = 150°C

20µs PULSE WIDTH

Tj = 25°C

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100.00

2.0

11A

=

I

D

T

= 150°C

J

1.5

1.0

0.5

0.0

T

= 25°C

J

10.00

V

= 15V

DS

20µs PULSE WIDTH

V

= 10V

1.00

GS

2.0

2.5

V

3.0

3.5

4.0

4.5

5.0

-60 -40 -20

0

20

40

60

80 100 120 140 160

°

T , Junction Temperature

( C)

, Gate-to-Source Voltage (V)

J

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

3

IRF6602/IRF6602TR1

6.0

5.0

4.0

3.0

2.0

1.0

0.0

100000

V

= 0V,

f = 1 MHZ

GS

I

= 8.8A

D

C

= C + C

,

C

ds

SHORTED

iss

gs

gd

V

= 16V

= 10V

C

= C

DS

rss

gd

C

= C + C

oss

ds

gd

10000

1000

100

Ciss

Coss

Crss

10

1

10

100

0

5

10

15

V

, Drain-to-Source Voltage (V)

DS

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

10

1

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

°

T = 150

J

C

100µsec

°

T = 25

C

1msec

J

10msec

1

Tc = 25°C

Tj = 150°C

Single Pulse

V

= 0 V

GS

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

1

10

100

V

,Source-to-Drain Voltage (V)

SD

V

, Drain-toSource Voltage (V)

DS

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating

Forward Voltage

Area

4

www.irf.com

IRF6602/IRF6602TR1

12

3.0

2.5

2.0

9

I

= 250µA

D

1.5

1.0

0.5

0.0

6

3

0

-75 -50 -25

0

25

50

75 100 125 150

25

50

75

100

125

150

T

, Temperature ( °C )

J

T_A, Ambient Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Fig 10. Threshold Voltage Vs. Temperature

Ambient Temperature

100

10

1

D = 0.50

0.20

0.10

0.05

P

DM

0.02

0.01

t

1

t

2

Notes:

SINGLE PULSE

1. Duty factor D =

2. Peak T = P

t

/ t

1

(THERMAL RESPONSE)

2

x

Z

+ T

10

J

DM

thJA

A

0.1

0.00001

0.0001

0.001

0.01

0.1

1

100

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

5

IRF6602/IRF6602TR1

15V

250

200

150

100

50

I

D

TOP

3.9A

7.0A

8.8A

DRIVER

+

L

V

BOTTOM

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

0

t

p

25

50

75

100

125

150

°

( C)

Starting Tj, Junction Temperature

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

L_D

V_DS

Fig 12b. Unclamped Inductive Waveforms

+

-

V_DD

D.U.T

Current Regulator

V_GS

Same Type as D.U.T.

Pulse Width < 1µs

Duty Factor < 0.1%

50KΩ

.2µF

12V

.3µF

Fig 14a. Switching Time Test Circuit

V_DS

+

V

DS

D.U.T.

-

90%

V

GS

3mA

10%

V_GS

I

D

G

Current Sampling Resistors

t_d(on)

t_d(off)

t_r

t_f

Fig 14b. Switching Time Waveforms

Fig 13. Gate Charge Test Circuit

6

www.irf.com

IRF6602/IRF6602TR1

Driver Gate Drive

P.W.

Period

D =

D.U.T

Period

P.W.

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

-

+

di/dt

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

R_G

+

-

Body Diode

Forward Drop

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

Id

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 16. Gate Charge Waveform

www.irf.com

7

IRF6602/IRF6602TR1

Power MOSFET Selection for Non-Isolated DC/DC Converters

Synchronous FET

Control FET

The power loss equation for Q2 is approximated

by;

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called

the Control FET, are impacted by the R_ds(on)of the

MOSFET, but these conduction losses are only about

one half of the total losses.

P = P

+ P + P^*

drive output

loss

conduction

P = I_rms²× R_ds(on)

loss ( )

Power losses in the control switch Q1 are given

by;

+ Q × V × f

(

)

g



Q_oss



P_loss= P_conduction+ P_switching+ P_drive+ P_output



+

×V × f + Q × V × f

in rr in

(

)

 2



This can be expanded and approximated by;

*dissipated primarily in Q1.

P

= I ²× R_ds(on)

(

)

loss

rms

For the synchronous MOSFET Q2, R_ds(on)is an im-

portant characteristic; however, once again the im-

portance of gate charge must not be overlooked since

it impacts three critical areas. Under light load the

MOSFET must still be turned on and off by the con-

trol IC so the gate drive losses become much more

significant. Secondly, the output charge Q_ossand re-

verse recovery charge Q_rrboth generate losses that

are transfered to Q1 and increase the dissipation in

that device. Thirdly, gate charge will impact the

MOSFETs’ susceptibility to Cdv/dt turn on.

The drain of Q2 is connected to the switching node

of the converter and therefore sees transitions be-

tween ground and V_in. As Q1 turns on and off there is

a rate of change of drain voltage dV/dt which is ca-

pacitively coupled to the gate of Q2 and can induce

a voltage spike on the gate that is sufficient to turn

the MOSFET on, resulting in shoot-through current .

The ratio of Q_gd/Q_gs1must be minimized to reduce the

potential for Cdv/dt turn on.



Q_gd

i_g



Q_gs2

i_g













+ I ×

× V × f + I ×

× V × f

in







+ Q × V × f

(

 Q_oss



)

g





+

×V × f

in

2

This simplified loss equation includes the terms Q_gs2

and Q_osswhich are new to Power MOSFET data sheets.

Q_gs2is a sub element of traditional gate-source

charge that is included in all MOSFET data sheets.

The importance of splitting this gate-source charge

into two sub elements, Q_gs1and Q_gs2, can be seen from

Fig 16.

Q_gs2indicates the charge that must be supplied by

the gate driver between the time that the threshold

voltage has been reached and the time the drain cur-

rent rises to I_dmaxat which time the drain voltage be-

gins to change. Minimizing Q_gs2is a critical factor in

reducing switching losses in Q1.

Q_ossis the charge that must be supplied to the out-

put capacitance of the MOSFET during every switch-

ing cycle. Figure A shows how Q_ossis formed by the

parallel combination of the voltage dependant (non-

linear) capacitances C_dsand C_dgwhen multiplied by

the power supply input buss voltage.

Figure A: Q_ossCharacteristic

8

www.irf.com

IRF6602/IRF6602TR1

DirectFET Outline Dimension, MQ Outline

(Medium Size Can, Q-Designation)

Please see DirectFET application note AN-1035 for all details regarding the assembly of

DirectFET. This includes all recommendations for stencil and substrate designs.

DIMENSIONS

IMPERIAL

MIN

METRIC

MAX

CODE MIN

MAX

0.250

0.199

0.156

0.018

0.028

0.029

0.024

0.011

0.067

0.123

0.028

0.003

6.35

5.05

3.95

0.45

0.72

0.73

0.61

0.27

0.246

0.189

0.152

0.014

0.027

0.022

0.009

A

B

C

D

E

F

6.25

4.80

3.85

0.35

0.68

0.69

0.57

0.23

1.57

2.95

0.59

0.03

NOTE: CONTROLLING

DIMENSIONS ARE IN MM

G

H

J

1.70 0.062

K

L

3.12

0.70

0.116

0.023

M

N

0.08 0.001

www.irf.com

9

IRF6602/IRF6602TR1

DirectFET Board Footprint, MQ Outline

(Medium Size Can, Q-Designation)

Please see DirectFET application note AN-1035 for all details regarding the assembly of

DirectFET. This includes all recommendations for stencil and substrate designs.

DirectFET Tape and Reel Dimension

(Showing Component Orientation)

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6602). For 1000 parts on 7" reel,

order IRF6602TR1

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

METRIC

MAX

IMPERIAL

METRIC

MIN MAX

IMPERIAL

CODE

MIN

MAX

N.C

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

MIN

A

B

C

D

E

F

12.992

0.795

0.504

0.059

3.937

N.C

330.0

20.2

12.8

1.5

N.C

13.2

N.C

18.4

14.4

15.4

177.77 N.C

0.75

0.53

0.059

2.31

N.C

19.06

13.5

1.5

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

G

H

0.488

0.469

0.47

12.4

11.9

10

www.irf.com

IRF6602/IRF6602TR1

DirectFET Part Marking

Notes:

ꢀ Used double sided cooling , mounting pad.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Repetitive rating; pulse width limited by

max. junction temperature.

Starting T_J= 25°C, L = 2.5mH

R_G= 25Ω, I_AS= 8.8A. (See Figure 14).

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Surface mounted on 1 in. square Cu board.

T_Cmeasured with thermal couple mounted to top (Drain) of

part.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/04

www.irf.com

11


型号：	IRF6602TR1
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总11页 (文件大小：192K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF6602TR1 [INFINEON]

相关型号：

IRF6603

IRF6603PBF

IRF6603TR1

IRF6604

IRF6604PBF

IRF6604TR1

IRF6607

IRF6607TR1

IRF6608

IRF6609

IRF6609PBF

IRF6609TR1