IRF6646TR1PBF [INFINEON]
Ideal for High Performance Isolated Converter Primary Switch Socket; 非常适用于高性能隔离式转换器主开关插座
| 型号： | IRF6646TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Ideal for High Performance Isolated Converter Primary Switch Socket |
| 文件： | 总10页 (文件大小：655K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97224A
IRF6646PbF
IRF6646TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs Compliant
RDS(on)
VDSS
VGS
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
7.6mΩ@ 10V
80V max ±20V max
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
36nC
12nC
2.0nC
48nC
18nC
3.8V
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
M N
SQ
SX
ST
MQ
M X
MT
Description
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input
voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced
total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
80
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
12
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
9.6
68
@ TA = 70°C
@ TC = 25°C
A
96
DM
EAS
IAR
230
7.2
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
0.05
0.04
0.03
0.02
0.01
0
12.0
10.0
8.0
I
= 7.2A
I = 7.2A
D
D
V
= 40V
DS
DS
V
= 16V
6.0
T
= 125°C
4.0
J
2.0
T
= 25°C
J
0.0
4
6
8
10
12
14
16
0
10
Q
20
30
40
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source
Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 8.8mH, RG = 25Ω, IAS = 7.2A.
www.irf.com
1
08/24/06
IRF6646PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
80
–––
0.10
7.6
–––
-11
–––
–––
–––
–––
–––
36
–––
–––
9.5
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A i
VDS = VGS, ID = 150µA
∆ΒVDSS/∆TJ
RDS(on)
–––
–––
3.0
VGS(th)
4.9
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
17
––– mV/°C
VDS = 80V, VGS = 0V
20
250
100
-100
–––
50
µA
nA
S
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 10V, ID = 7.2A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 40V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
7.6
2.0
12
–––
–––
VGS = 10V
ID = 7.2A
nC
14
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 15
14
VDS = 16V, VGS = 0V
18
nC
Gate Resistance
1.0
17
Ω
VDD = 40V, VGS = 10Vꢁi
td(on)
tr
td(off)
tf
Turn-On Delay Time
ID = 7.2A
Rise Time
20
RG=6.2Ω
See Fig. 16 & 17
VGS = 0V
Turn-Off Delay Time
31
ns
Fall Time
12
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 2060 –––
VDS = 25V
ƒ = 1.0MHz
Output Capacitance
–––
–––
480
120
–––
–––
pF
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, f=1.0MHz
––– 2180 –––
––– 310 –––
VGS = 0V, VDS = 64V, f=1.0MHz
Output Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
IS
–––
––– 2.5j
showing the
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁg
–––
–––
96
p-n junction diode.
TJ = 25°C, IS = 7.2A, VGS = 0V i
TJ = 25°C, IF = 7.2A, VDD = 40V
di/dt = 100A/µs iꢁSee Fig. 18
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
36
1.3
54
72
V
ns
nC
Qrr
48
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Thermally limited and used Rθja to calculate.
2
www.irf.com
IRF6646PbF
Absolute Maximum Ratings
Max.
2.8
Parameter
Units
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.4
RθJA
°C/W
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Deratinig Factor
–––
0.022
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.678449 0.00086
τ
τ
J τJ
Aτ
0.1
17.29903 0.57756
17.56647 8.94
9.470128 106
τ
τ
1 τ1
τ
τ
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
3
IRF6646PbF
100
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
6.0V
10
6.0V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
≤
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
2.0
1.5
1.0
0.5
I
= 12A
1000
D
V
= 10V
V
= 10V
DS
GS
≤
60µs PULSE WIDTH
100
10
1
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
3
4
5
6
7
8
T
J
, Junction Temperature (°C)
Fig 6. TypicaVl GTSransfer Characteristics
, Gate-to-Source Voltage (V)
Fig 7. Normalized On-Resistance vs. Temperature
45
10000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
40
35
30
25
20
15
10
5
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
ds
gd
C
iss
1000
C
oss
C
rss
0
100
10
30
50
70
90
110
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current
4
www.irf.com
IRF6646PbF
1000
100
10
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
T
T
T
= 150°C
= 25°C
= -40°C
10msec
J
J
J
1
T
T
= 25°C
0.1
0.01
A
J
= 150°C
V
= 0V
GS
Single Pulse
0
0.01
0.10
1.00
10.00
100.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
6.0
5.0
4.0
3.0
2.0
14
12
10
8
I
I
I
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
6
4
2
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
J
T
, Ambient Temperature (°C)
A
Fig 13. Typical Threshold Voltage vs.
Fig 12. Maximum Drain Current vs. Ambient Temperature
Junction Temperature
1000
900
800
700
600
500
400
300
200
100
0
I
D
TOP
3.3A
4.0A
BOTTOM 7.2A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6646PbF
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
VGS
10V
td(on)
td(off)
tr
tf
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6646PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
www.irf.com
7
IRF6646PbF
DirectFET Outline Dimension, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET Part Marking
8
www.irf.com
IRF6646PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6646TRPBF). For 1000 parts on 7"
reel, order IRF6646TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/06
www.irf.com
9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRF6648TR1PBF
Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
IRF6655TR1
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
INFINEON
©2020 ICPDF网 联系我们和版权申明