IRF7313TRPBF-1 [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRF7313TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总7页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7313PbF-1
HEXFET® Power MOSFET
VDS
30
0.029
22
V
Ω
1
2
3
4
8
S1
G1
D1
RDS(on) max
(@VGS = 10V)
Qg (typical)
7
D1
6
S2
D2
nC
A
5
G2
D2
ID
6.5
SO-8
(@TA = 25°C)
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tube/Bulk
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF7313PbF-1
IRF7313TRPbF-1
IRF7313PbF-1
SO-8
Tape and Reel
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS
VGS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
± 20
6.5
V
TA = 25°C
TA = 70°C
Continuous Drain Currentꢀ
ID
5.2
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
IDM
IS
30
2.5
TA = 25°C
TA = 70°C
2.0
1.3
Maximum Power Dissipation ꢀ
PD
W
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
82
mJ
A
4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
5.8
mJ
V/ ns
°C
dv/dt
TJ,TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢀ
RθJA
62.5
°C/W
1
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7313PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
0.022 V/°C Reference to 25°C, ID = 1mA
0.023 0.029
0.032 0.046
1.0
14
1.0
25
100
-100
VGS = 10V, ID = 5.8A
GS = 4.5V, ID = 4.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID = 5.8A
Forward Transconductance
V
DS = 24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
22
33
ID = 5.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.6 3.9
6.4 9.6
nC VDS = 15V
VGS = 10V, See Fig. 10
8.1
8.9
26
17
12
13
39
26
VDD = 15V
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 15Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
650
320
130
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
IS
D
S
2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
30
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
0.78 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
45
58
68
87
ns
nC
Qrr
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A.
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
2
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7313PbF-1
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
VDS
100
10
1
100
TJ = 25°C
TJ = 150°C
T = 150°C
J
10
T = 25°C
J
VDS = 10V
20μs PULSE WIDTH
V
= 0V
GS
A
1
5.0A
3.0
3.5
4.0
4.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS , Gate-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
3
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7313PbF-1
2.0
1.5
1.0
0.5
0.0
0.040
0.036
0.032
0.028
0.024
0.020
5.8A
=
I
D
V
= 4.5V
GS
V
= 10V
GS
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
200
0.12
I
D
TOP
1.8A
3.2A
BOTTOM 4.0A
0.10
0.08
0.06
0.04
0.02
0.00
160
120
80
40
0
I
= 5.8A
D
A
A
0
3
6
9
12
15
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7313PbF-1
1200
900
600
300
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
I = 5.8A
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
= 15V
DS
= C
= C + C
ds
gd
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7313PbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
6
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7313PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
FEED DIRECTION
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
7
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
相关型号：
IRF7313UPBF
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
INFINEON
IRF7313UTRPBF
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
INFINEON
IRF7314TR
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
IRF7316GPBF
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明