IRF7341QTR [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | IRF7341QTR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总9页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94391A
IRF7341Q
HEXFET® Power MOSFET
Typical Applications
• Anti-lock Braking Systems (ABS)
• Electronic Fuel Injection
• Air bag
VDSS
55V
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
Benefits
• Advanced Process Technology
• Dual N-Channel MOSFET
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Repetitive Avalanche Allowed up to Tjmax
• Automotive [Q101] Qualified
4.42A
Description
1
2
3
4
8
S 1
G 1
D 1
Specifically designed for Automotive applications, these
HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
AutomotivequalifiedHEXFETPowerMOSFET’sarea175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
7
D 1
6
S2
D2
5
D 2
G 2
SO-8
Top View
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of
power applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also available in
Tape & Reel.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
55
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
5.1
4.2
42
A
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.4
1.7
16
W
W
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
140
5.1
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
EAR
Repetitive Avalanche Energy
Junction and Storage Temperature Range
See Fig. 14, 15, 16
-55 to + 175
mJ
°C
TJ , TSTG
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
62.5
°C/W
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1
03/14/02
IRF7341Q
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.043 0.050
––– 0.056 0.065
1.0 ––– –––
10.4 ––– –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
VGS = 10V, ID = 5.1A
VGS = 4.5V, ID = 4.42A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 5.2A
VDS = 44V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
––– 29
––– 2.9 4.4
––– 7.3 11
44
ID = 5.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
pF
VDS = 44V
VGS = 10V
––– 9.2 –––
––– 7.7 –––
––– 31 –––
––– 12.5 –––
––– 780 –––
––– 190 –––
––– 66 –––
VDD = 28V
ID = 1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 2.4
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 42
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
––– 51 77
––– 76 114
V
TJ = 25°C, IS = 2.6A, VGS = 0V
TJ = 25°C, IF = 2.6A
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7341Q
100
10
1
100
10
1
VGS
VGS
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
TOP
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
5.2A
=
I
D
°
T = 25 C
2.0
1.5
1.0
0.5
0.0
J
°
T = 175 C
J
10
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
1
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
3.0
4.0
5.0 6.0
7.0
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7341Q
20
16
12
8
1400
I
D
= 5.2A
V
V
V
= 44V
= 27V
= 11V
V
= 0V,
f = 1 MHZ
DS
DS
DS
GS
C
= C
gs
+
C
,
C
iss
SHORTED
gd
ds
1200
1000
800
600
400
200
0
C
C
= C
gd
rss
= C + C
oss
ds gd
Ciss
4
Coss
Crss
0
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10
10us
100us
1ms
°
T = 25 C
J
1
10ms
1
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
0.1
1
10
100
1000
0.5
0.8
1.1
1.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7341Q
6.0
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7341Q
0.070
0.060
0.050
0.040
0.030
0.020
0.100
0.080
0.060
0.040
0.020
VGS = 4.5V
I
= 7.1A
D
VGS = 10V
40
2.0
4.0
V
6.0
8.0
10.0
12.0
14.0
16.0
0
10
20
30
50
60
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 11. Typical On-Resistance Vs.
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Q
G
10 V
400
320
240
160
80
I
D
Q
Q
GD
GS
TOP
2.1A
4.3A
5.1A
V
G
BOTTOM
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
0
25
50
75
100
125
150
175
V
GS
°
Starting Tj, Junction Temperature
(
C)
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Fig 13b. Gate Charge Test Circuit
6
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IRF7341Q
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
∆
0.01
1
avalanche losses
0.05
0.10
0.1
0.01
0.001
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
140
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 5.1A
Single Pulse
120
100
80
60
40
20
0
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2∆T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
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7
IRF7341Q
SO-8 Package Details
INCH ES
M ILLIMET ERS
D IM
D
MIN
MAX
.0688
.0098
.018
MIN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075
.189
.0098
.196
0.25 (.010)
M
A M
- A -
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
L
A1
B
8X
θ
0.25 (.010)
M
C A S B S
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
Part Marking
8
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IRF7341Q
Tape and Reel
T E R M IN A L N U M B E R
1
12.3 ( .48 4
11.7 ( .46 1
)
)
8.1 ( .31 8
7.9 ( .31 2
)
)
FE E D D IR E C TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.00
(12.992)
M AX .
14.40 ( .5 66
12.40 ( .4 88
)
)
N O TE S
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .
2. O U TL IN E C O N FO R M S T O E IA -481 E IA -541.
:
&
Data and specifications subject to change without notice.
This product has been designed and qualified for the Autyomotivr [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
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9
相关型号：
IRF7341QTRPBF
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
INFINEON
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