IRF7341TR [INFINEON]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | IRF7341TR |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总7页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91703A
IRF7341
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
1
2
3
4
8
S1
G1
S2
D1
VDSS = 55V
7
D1
6
D2
5
D2
G2
RDS(on) = 0.050Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
55
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
4.7
3.8
A
38
PD @TC = 25°C
PD @TC = 70°C
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
± 20
30
W/°C
VGS
Gate-to-Source Voltage
V
V
VGSM
EAS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
72
dv/dt
TJ, TSTG
Peak Diode Recovery dv/dt
5.0
V/ns
°C
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambientꢀ
Typ.
–––
Max.
62.5
Units
°C/W
RθJA
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1
4/11/05
IRF7341
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.059 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.043 0.050
––– 0.056 0.065
1.0 ––– –––
7.9 ––– –––
––– ––– 2.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 10V, ID = 4.7A
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
VGS = 4.5V, ID = 3.8A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 4.5A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 55°C
VGS = -20V
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-Source Forward Leakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = 20V
Qg
––– 24
36
ID = 4.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.4
nC VDS = 44V
VGS = 10V, See Fig. 10
––– 7.0
––– 8.3
10
12
VDD = 28V
––– 3.2 4.8
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 32
––– 13
48
20
RG = 6.0Ω
RD = 28Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 740 –––
––– 190 –––
––– 71 –––
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
2.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integralreverse
––– ––– 1.2
––– 60 90
––– 120 170
38
p-njunctiondiode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
TJ = 25°C, IS = 2.0A, VGS = 0V
ns
TJ = 25°C, IF = 2.0A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Starting TJ = 25°C, L = 6.5mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 4.7A. (See Figure 8)
ꢀ When mounted on 1 inch square copper board, t<10 sec
2
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IRF7341
100
10
1
100
10
1
VGS
15V
12V
10V
8.0V
64.05VV
4.0V
3.5V
VGS
15V
12V
10V
8.0V
4.5V
4.0V
3.5V
TOP
TOP
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
10
1
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
V
= 0 V
20µs PULSE WIDTH
GS
0.1
0.2
3
4
5 6
0.5
0.8
1.1
1.4
V
, Gate-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
GS
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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3
IRF7341
2.5
0.120
0.100
0.080
0.060
0.040
4.7A
=
I
D
2.0
1.5
1.0
0.5
0.0
VGS = 4.5V
VGS = 10V
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
0.04
200
I
D
TOP
2.1A
3.8A
BOTTOM 4.7A
160
120
80
40
0
I
= 4.7A
D
A
0
2
4
6
8
10
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
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IRF7341
1200
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I =
4.5A
D
C
= C + C
iss
gs
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
rss
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7341
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WEEK
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
6
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IRF7341
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/05
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相关型号：
IRF7342TR
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
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